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STD2LN60K3STD2LN60K3

STD2LN60K3STD2LN60K3-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD2LN60K3STD2LN60K3
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD2LN60K3封装DPAK类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)2A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)4.5Ω@1A,10V阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)12nC@10V输入电容(Ciss@Vds)235pF@50V反向传输电容(Cr…
  • PDF STD2LN60K3STD2LN60K3.pdf
Consultation
STF24N60DM2

STF24N60DM2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF24N60DM2
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF24N60DM2封装TO-220F-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)18A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)200mΩ@10V,9A阈值电压(Vgs(th)@Id)5V@250uA
  • PDF STF24N60DM2.pdf
Consultation
STD11N65M5

STD11N65M5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD11N65M5
  • PackageTO-252
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD11N65M5封装TO-252类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)9A功率(Pd)85W导通电阻(RDS(on)@Vgs,Id)480mΩ@10V,4.5A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)620pF@100V
  • PDF STD11N65M5.pdf
Consultation
STP5NK100Z

STP5NK100Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP5NK100Z
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP5NK100Z封装TO-220类型1个N沟道漏源电压(Vdss)1kV连续漏极电流(Id)3.5A功率(Pd)125W导通电阻(RDS(on)@Vgs,Id)3.7Ω@1.75A,10V阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)59nC@10V输入电容(Ciss@Vds)1.154nF@25V反向传…
  • PDF STP5NK100Z.pdf
Consultation
STD5N52U

STD5N52U-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD5N52U
  • PackageTO-252
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD5N52U封装TO-252类型1个N沟道漏源电压(Vdss)525V连续漏极电流(Id)4.4A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)1.5Ω@10V,2.2A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)16.9nC@10V输入电容(Ciss@Vds)529pF@25V工作温度-…
  • PDF STD5N52U.pdf
Consultation
STF15NM65N

STF15NM65N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF15NM65N
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF15NM65N封装TO-220F-3类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)12A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)380mΩ@10V,6A阈值电压(Vgs(th)@Id)4V@250uA
  • PDF STF15NM65N.pdf
Consultation
STW6N95K5

STW6N95K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW6N95K5
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW6N95K5封装TO-247-3漏源电压(Vdss)950V连续漏极电流(Id)9A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)1Ω@10V,3A阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)13nC@10V输入电容(Ciss@Vds)450pF@100V反向传输电容(Crss@Vds)1.6p…
  • PDF STW6N95K5.pdf
Consultation
STO36N60M6

STO36N60M6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTO36N60M6
  • PackageTOLL
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STO36N60M6封装TOLL类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)30A功率(Pd)230W导通电阻(RDS(on)@Vgs,Id)99mΩ@15A,10V阈值电压(Vgs(th)@Id)4.75V@250uA栅极电荷(Qg@Vgs)44.3nC@10V输入电容(Ciss@Vds)1.96nF@100V工作温…
  • PDF STO36N60M6.pdf
Consultation
STL26NM60N

STL26NM60N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL26NM60N
  • PackageSMD
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL26NM60N封装SMD类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)2.7A；19A功率(Pd)125mW；3W导通电阻(RDS(on)@Vgs,Id)160mΩ@10V,10A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)60nC@10V输入电容(Ciss@Vds)1.8nF@50V反…
  • PDF STL26NM60N.pdf
Consultation
STP100N8F6

STP100N8F6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP100N8F6
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP100N8F6封装TO-220类型1个N沟道漏源电压(Vdss)80V连续漏极电流(Id)100A功率(Pd)176W导通电阻(RDS(on)@Vgs,Id)8mΩ@10V,50A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)100nC@10V输入电容(Ciss@Vds)5.955nF@25V反向传输电…
  • PDF STP100N8F6.pdf
Consultation
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