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Home > All Products > Triode/MOS transistor/transistor
STP20N90K5

STP20N90K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP20N90K5
  • PackageTO-220-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP20N90K5封装TO-220-3类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)20A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)250mΩ@10A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)40nC@10V输入电容(Ciss@Vds)1.5nF@100V工作温度…
  • PDF STP20N90K5.pdf
Consultation
STP80N240K6

STP80N240K6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP80N240K6
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP80N240K6封装TO-220类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)16A功率(Pd)140W导通电阻(RDS(on)@Vgs,Id)220mΩ@7A,10V阈值电压(Vgs(th)@Id)4V@100uA栅极电荷(Qg@Vgs)25.9nC@10V输入电容(Ciss@Vds)1.35nF@100V工作温…
  • PDF STP80N240K6.pdf
Consultation
STF140N6F7

STF140N6F7-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF140N6F7
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF140N6F7封装TO-220F-3类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)70A功率(Pd)33W导通电阻(RDS(on)@Vgs,Id)3.5mΩ@10V,35A阈值电压(Vgs(th)@Id)4V@250uA
  • PDF STF140N6F7.pdf
Consultation
STW4N150

STW4N150-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW4N150
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW4N150封装TO-247-3类型1个N沟道漏源电压(Vdss)1.5kV连续漏极电流(Id)4A功率(Pd)160W导通电阻(RDS(on)@Vgs,Id)7Ω@10V,2A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)50nC@10V输入电容(Ciss@Vds)1.3nF@25V
  • PDF STW4N150.pdf
Consultation
STP17NF25

STP17NF25-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP17NF25
  • PackageTO-220AB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP17NF25封装TO-220AB-3类型1个N沟道漏源电压(Vdss)250V连续漏极电流(Id)17A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)165mΩ@10V,8.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)29.5nC@10V输入电容(Ciss@Vds)1nF@25V工作温度…
  • PDF STP17NF25.pdf
Consultation
STF8N90K5

STF8N90K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF8N90K5
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF8N90K5封装TO-220FP类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)8A功率(Pd)130W阈值电压(Vgs(th)@Id)5V@100uA工作温度-55℃~+150℃@(Tj)
  • PDF STF8N90K5.pdf
Consultation
STF42N60M2-EP

STF42N60M2-EP-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF42N60M2-EP
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF42N60M2-EP封装TO-220FP类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)34A功率(Pd)40W导通电阻(RDS(on)@Vgs,Id)87mΩ阈值电压(Vgs(th)@Id)4.75V@250uA栅极电荷(Qg@Vgs)55nC@10V输入电容(Ciss@Vds)2.37nF@100V
  • PDF STF42N60M2-EP.pdf
Consultation
STP15N80K5

STP15N80K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP15N80K5
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP15N80K5封装TO-220类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)14A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)375mΩ@7A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)32nC@10V输入电容(Ciss@Vds)1.1nF@100V反向传输电…
  • PDF STP15N80K5.pdf
Consultation
STP60NF06

STP60NF06-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP60NF06
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP60NF06封装TO-220类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)60A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)16mΩ@10V,30A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)73nC@10V输入电容(Ciss@Vds)1.66nF@25V工作温度-55℃…
  • PDF STP60NF06.pdf
Consultation
STD5N95K3

STD5N95K3-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD5N95K3
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD5N95K3封装DPAK类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)4A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)3.5Ω@2A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)19nC@10V输入电容(Ciss@Vds)460pF@25V工作温度-55℃~+15…
  • PDF STD5N95K3.pdf
Consultation
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