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VNN7NV04PTR-E

VNN7NV04PTR-E-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelVNN7NV04PTR-E
  • PackageSOT-223-4
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号VNN7NV04PTR-E封装SOT-223-4开关类型通用输出数1比率 - 输入:输出0.042361111输出配置低端输出类型N 通道接口开/关电压 - 负载36V（最大）电压 - 供电 (Vcc/Vdd)不需要电流 - 输出（最大值）6A导通电阻（典型值）65 毫欧（最…
  • PDF VNN7NV04PTR-E.pdf
Consultation
STB80NF10T4

STB80NF10T4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTB80NF10T4
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB80NF10T4封装D2PAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)80A功率(Pd)300W导通电阻(RDS(on)@Vgs,Id)15mΩ@10V,40A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)182nC@10V输入电容(Ciss@Vds)5.5nF@25V工作温度-5…
  • PDF STB80NF10T4.pdf
Consultation
STP8N120K5

STP8N120K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP8N120K5
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP8N120K5封装TO-220类型1个N沟道漏源电压(Vdss)1.2kV连续漏极电流(Id)6A功率(Pd)130W导通电阻(RDS(on)@Vgs,Id)2Ω@10V,2.5A阈值电压(Vgs(th)@Id)5V@100uA
  • PDF STP8N120K5.pdf
Consultation
STL110N10F7

STL110N10F7-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL110N10F7
  • PackagePowerFLAT-8(5x6)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL110N10F7封装PowerFLAT-8(5x6)FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）100 V25°C 时电流 - 连续漏极 (Id)107A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）6 毫欧 @…
  • PDF STL110N10F7.pdf
Consultation
STF2N95K5

STF2N95K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF2N95K5
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF2N95K5封装TO-220F-3类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)2A功率(Pd)20W导通电阻(RDS(on)@Vgs,Id)5Ω@10V,1A阈值电压(Vgs(th)@Id)5V@100uA
  • PDF STF2N95K5.pdf
Consultation
STD2NK100Z

STD2NK100Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD2NK100Z
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD2NK100Z封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)1kV连续漏极电流(Id)1.85A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)8.5Ω@10V,900mA阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)16nC@10V输入电容(Ciss@Vds)499pF@25V…
  • PDF STD2NK100Z.pdf
Consultation
STL60P4LLF6

STL60P4LLF6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL60P4LLF6
  • PackagePowerFlat-8
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL60P4LLF6封装PowerFlat-8类型1个P沟道漏源电压(Vdss)40V连续漏极电流(Id)60A功率(Pd)100W导通电阻(RDS(on)@Vgs,Id)14mΩ@6.5A,10V阈值电压(Vgs(th)@Id)1V@250uA栅极电荷(Qg@Vgs)34nC@4.5V输入电容(Ciss@Vds)3.525nF@25V
  • PDF STL60P4LLF6.pdf
Consultation
STS1DNC45STS1DNC45

STS1DNC45STS1DNC45-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTS1DNC45STS1DNC45
  • PackageSOIC-8
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STS1DNC45封装SOIC-8类型2个N沟道漏源电压(Vdss)450V连续漏极电流(Id)400mA功率(Pd)1.6W导通电阻(RDS(on)@Vgs,Id)4.1Ω@10V,500mA阈值电压(Vgs(th)@Id)3.7V@250uA栅极电荷(Qg@Vgs)10nC@10V输入电容(Ciss@Vds)160pF@25V反向传…
  • PDF STS1DNC45STS1DNC45.pdf
Consultation
STW12N120K5

STW12N120K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW12N120K5
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW12N120K5封装TO-247-3类型1个N沟道漏源电压(Vdss)1.2kV连续漏极电流(Id)12A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)620mΩ@10V,6A阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)44.2nC@10V输入电容(Ciss@Vds)1.37nF@100V反向…
  • PDF STW12N120K5.pdf
Consultation
STP4NK60ZFP

STP4NK60ZFP-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP4NK60ZFP
  • PackageTO-220F
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP4NK60ZFP封装TO-220F类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)4A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)2Ω@10V,2A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)26nC@10V输入电容(Ciss@Vds)510pF@25V
  • PDF STP4NK60ZFP.pdf
Consultation
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