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STP20N65M5

STP20N65M5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP20N65M5
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP20N65M5封装TO-220类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)18A功率(Pd)130W导通电阻(RDS(on)@Vgs,Id)190mΩ@9A,10V阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)45nC@10V输入电容(Ciss@Vds)1.345nF@100V反向传输…
  • PDF STP20N65M5.pdf
Consultation
STQ2HNK60ZR-AP

STQ2HNK60ZR-AP-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTQ2HNK60ZR-AP
  • PackageTO-92
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STQ2HNK60ZR-AP封装TO-92类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)500mA功率(Pd)3W导通电阻(RDS(on)@Vgs,Id)4.8Ω@1A,10V阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)15nC@10V输入电容(Ciss@Vds)280pF@25V工作温度…
  • PDF STQ2HNK60ZR-AP.pdf
Consultation
STD35NF06T4

STD35NF06T4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD35NF06T4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD35NF06T4封装DPAK类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)35A功率(Pd)80W导通电阻(RDS(on)@Vgs,Id)20mΩ@10V,17.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)60nC@10V输入电容(Ciss@Vds)1.3nF@25V工作温度-55℃…
  • PDF STD35NF06T4.pdf
Consultation
STP2N80K5

STP2N80K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP2N80K5
  • PackageTO-220-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP2N80K5封装TO-220-3FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）800 V25°C 时电流 - 连续漏极 (Id)2A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）4.5 欧姆 @ 1A，10V不…
  • PDF STP2N80K5.pdf
Consultation
STP55NF06

STP55NF06-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP55NF06
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP55NF06封装TO-220类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)50A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)18mΩ@10V,27.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)60nC@10V输入电容(Ciss@Vds)1.3nF@25V工作温度-55…
  • PDF STP55NF06.pdf
Consultation
STP55NF06

STP55NF06-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP55NF06
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP55NF06封装TO-220类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)50A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)18mΩ@10V,27.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)60nC@10V输入电容(Ciss@Vds)1.3nF@25V工作温度-55…
  • PDF STP55NF06.pdf
Consultation
STP80NF10

STP80NF10-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP80NF10
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP80NF10封装TO-220类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)80A功率(Pd)300W导通电阻(RDS(on)@Vgs,Id)15mΩ@10V,40A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)182nC@10V输入电容(Ciss@Vds)5.5nF@25V工作温度-55…
  • PDF STP80NF10.pdf
Consultation
STP20NM60FP

STP20NM60FP-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP20NM60FP
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP20NM60FP封装TO-220FP类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)20A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)250mΩ@10V,10A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)54nC@10V输入电容(Ciss@Vds)1.5nF@25V反向传输…
  • PDF STP20NM60FP.pdf
Consultation
STD30NF06LT4

STD30NF06LT4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD30NF06LT4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD30NF06LT4封装DPAK类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)35A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)28mΩ@10V,18A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)31nC@5V输入电容(Ciss@Vds)1.6nF@25V工作温度-55℃…
  • PDF STD30NF06LT4.pdf
Consultation
STL76DN4LF7AG

STL76DN4LF7AG-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL76DN4LF7AG
  • PackagePowerVDFN-8
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL76DN4LF7AG封装PowerVDFN-8类型2个N沟道漏源电压(Vdss)40V连续漏极电流(Id)40A导通电阻(RDS(on)@Vgs,Id)6mΩ@10A,10V阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)956pF@25V工作温度-55℃~+…
  • PDF STL76DN4LF7AG.pdf
Consultation
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