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3DD13005GRD

3DD13005GRD-华润华晶

  • TypeTransistor (BJT)
  • Model3DD13005GRD
  • PackageTO-262-3
  • Manufacturer华润华晶
  • DescriptionCollector Current (Ic) 4A Voltage - Collector-Emitter Breakdown 400V Various  Ib, Ic Hour  Vce Saturation Voltage Drop 250mV@2A,500mA Various  Ic, Vce Hour DC Current Gain (hFE) 15@1A,5V Power 50WFrequency 5MHz Transistor Type NPN Package TO-262-3 BJT Brand CR Huajing Part No. 3DD13005GRD
  • PDF 3DD13005GRD.pdf
3DD13009AN

3DD13009AN-华润华晶

  • TypeTransistor (BJT)
  • Model3DD13009AN
  • PackageTO-3PN
  • Manufacturer华润华晶
  • DescriptionCollector Current (Ic) 12A Voltage - Collector-Emitter Breakdown 400V Various  Ib, Ic Hour  Vce Saturation Voltage Drop 450mV@8A,1.6A Various  Ic, Vce Hour DC Current Gain (hFE) - Power 120WFrequency 4MHz Transistor Type NPN Package TO-3PN BJT Brand CR Huajing Part No. 3DD13009AN
  • PDF 3DD13009AN.pdf
3DD13007X1

3DD13007X1-华润华晶

  • TypeTransistor (BJT)
  • Model3DD13007X1
  • PackageTO-220AB-3
  • Manufacturer华润华晶
  • DescriptionCollector Current (Ic) 8A Voltage - Collector-Emitter Breakdown 400V Various  Ib, Ic Hour  Vce Saturation Voltage Drop 500mV@5A,1A Various  Ic, Vce Hour DC Current Gain (hFE) - Power 80WFrequency 10MHz Transistor Type NPN Package TO-220AB-3 BJT Brand CR Huajing Part No. 3DD13007X1
  • PDF 3DD13007X1.pdf
3DD13009A8

3DD13009A8-华润华晶

  • TypeTransistor (BJT)
  • Model3DD13009A8
  • PackageTO-220AB-3
  • Manufacturer华润华晶
  • DescriptionCollector Current (Ic) 12A Voltage - Collector-Emitter Breakdown 400V Various  Ib, Ic Hour  Vce Saturation Voltage Drop 450mV@8A,1.6A Various  Ic, Vce Hour DC Current Gain (hFE) - Power 100WFrequency 4MHz Transistor Type NPN Package TO-220AB-3 BJT Brand CR Huajing Part No. 3DD13009A8
  • PDF 3DD13009A8.pdf
3DD13005C7D

3DD13005C7D-华润华晶

  • TypeTransistor (BJT)
  • Model3DD13005C7D
  • PackageTO-126
  • Manufacturer华润华晶
  • DescriptionCollector Current (Ic) 4A Voltage - Collector-Emitter Breakdown 400V Various  Ib, Ic Hour  Vce Saturation Voltage Drop 300mV@2A,500mA Various  Ic, Vce Hour DC Current Gain (hFE) - Power 50W Frequency 5MHz Transistor Type NPN+PNP Package TO-126 BJT Brand CR Huajing Part No. 3DD13005C7D
  • PDF 3DD13005C7D.pdf
3DD13003F6

3DD13003F6-华润华晶

  • TypeTransistor (BJT)
  • Model3DD13003F6
  • PackageTO-126
  • Manufacturer华润华晶
  • DescriptionCollector Current (Ic) 1.5A Voltage - Collector-Emitter Breakdown 400V Various  Ib, Ic Hour  Vce Saturation Voltage Drop 300mV@1A,250mA Various  Ic, Vce Hour DC Current Gain (hFE) - Power 50WFrequency 5MHz Transistor Type NPN Package TO-126 BJT Brand CR Huajing Part No. 3DD13003F6
  • PDF 3DD13003F6.pdf
3DD13003E6D

3DD13003E6D-华润华晶

  • TypeTransistor (BJT)
  • Model3DD13003E6D
  • PackageTO-126
  • Manufacturer华润华晶
  • DescriptionCollector Current (Ic) 1.3A Voltage - Collector-Emitter Breakdown 400V Various  Ib, Ic Hour  Vce Saturation Voltage Drop 400mV@500mA,100mA Various  Ic, Vce Hour DC Current Gain (hFE) 15@200mA,5V Power 40WFrequency 5MHz Transistor Type NPN+PNP Package TO-126 BJT Brand CR Huajing Part No. 3DD13003E6D
  • PDF 3DD13003E6D.pdf
3DD13003E1D

3DD13003E1D-华润华晶

  • TypeTransistor (BJT)
  • Model3DD13003E1D
  • PackageTO-92-3
  • Manufacturer华润华晶
  • DescriptionCollector Current (Ic) 1.3A Voltage - Collector-Emitter Breakdown 400V Various  Ib, Ic Hour  Vce Saturation Voltage Drop 400mV@500mA,100mA Various  Ic, Vce Hour DC Current Gain (hFE) 15@200mA,5V Power 800mW Frequency 5MHz Transistor Type NPN+PNP Package TO-92-3 BJT Brand CR Huajing Part No. 3DD13003E1D
  • PDF 3DD13003E1D.pdf
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