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Home > All Products > Triode/MOS transistor/transistor
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MICRONEUTCDIODES华润华晶CHIPLINKNCESTTI
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Package：
D2PAKDFN(5x6)DFN-12(4.5x5)DFN-3(0.6x0.8)DFN-3(0.6x1)DFN-3(1.5x2)DFN-6(0.6x0.8)DFN-6(2x2)DFN-6-EP(2x2)DFN-6L(2x2)DFN-8(3.1x3.2)DFN-8(3.3x3.3)DFN-8(3x3)DFN-8(4.9x5.7)DFN-8(4.9x5.8)DFN-8(5.1x6)DFN-8(5.7x5.1)DFN-8(5.8x4.9)DFN-8(5x6)DFN-8L(3.3x3.3)DFN-8L(3x3)DFN-8L(5x6)DFN2020-6DFN2x2-6LDMN3032LFDB-7DPAKESOP-8FDFN-8L(5x6)H2PAK-2ISOTOPPDFN-8(3.1x3.1)PDFN-8(3.1x3.2)PDFN-8(3.3x3.3)PDFN-8(4.9x5.8)PDFN-8(5.1x5.8)PDFN-8(5.2x6.2)PDFN-8(5.8x4.9)PDFN-8(5x5)PDFN-8(5x5.8)PDFN3333-8Power-DI-5060-8PowerDI-3333-8PowerDI-5060-8PowerDI-8(5x6)PowerDI1012-8PowerDI3333-8PowerDI5060-8PowerFLAT(3.3x3.3)PowerFLAT-5x6PowerFLAT-5x6-8PowerFlat-8PowerFLAT-8(3.3x3.3)PowerFLAT-8(5x6)PowerVDFN-8SC-59SC-70-3SMDSO-8SOD-323SOIC-8SOP-8SOP-8-4.0mmSOT-223SOT-223-2SOT-223-3SOT-223-3LSOT-223-4SOT-23SOT-23-3SOT-23-3LSOT-23-6SOT-23-6LSOT-23FSOT-26SOT-323SOT-363SOT-363-6SOT-523SOT-523-3SOT-563SOT-89SOT-89-3SOT-89-3LSOT-963SOT-963-6TDFN-8-PowerTO-126TO-220TO-220-3TO-220-3LTO-220AB-3TO-220FTO-220F-1TO-220F-3TO-220F1TO-220FPTO-220FP-3TO-220FPAB-3TO-247TO-247-3TO-247-3LTO-247AC-3TO-247PTO-251TO-251(IPAK)TO-252TO-252(DPAK)TO-252-2TO-252-2(DPAK)TO-252-2LTO-252-3TO-252-4TO-261-4TO-262-3TO-263TO-263-2TO-263-3TO-263-6TO-263-7LTO-3P-3TO-3PFTO-3PF-3TO-3PNTO-92TO-92-2.5mmTO-92-3TO-92LTO-92L-3TOLLTSOT-26TSSOP-8U-DFN2020-6U-DFN2020-6BU-DFN2020-6DUDFN2020-6-EPV-DFN3030-8KV-DFN3333-8VDFN-8-PowerX1-DFN1006-3X1-DFN1212-3X1-DFN1411-3X2-DFN1006-3X2-DFN1310-6X2-DFN2015-3X2-DSN1006-3XFDFN-3(0.6x0.8)
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MEM2301XG

MEM2301XG-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2301XG
  • PackageSOT-23
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.8A Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 110m Ω @ 4.5V, 2.8A Package SOT-23 MOSFET Brand MICRONE Nanjing Weimeng MEM2301XG Series MEM2301
  • PDF MEM2301XG.pdf
Consultation
MEM2302XG

MEM2302XG-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2302XG
  • PackageSOT-23
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 850mV@250uA Current 3A power (Pd) 700mW channel N conduction resistance (RDS (on) @ Vgs, Id) 50m Ω @ 4.5V, 3A package SOT-23 field-effect transistor (MOSFET) brand MICRONE Nanjing Weimeng MEM2302XG series MEM2302
  • PDF MEM2302XG.pdf
Consultation
MEM2310XG

MEM2310XG-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2310XG
  • PackageSOT-23
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 5.8A Power (Pd) 1.4W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 5.8A Package SOT-23 MOSFET Brand MICRONE Nanjing Weimeng MEM2310XG Series MEM2310
  • PDF MEM2310XG.pdf
Consultation
MEM2303M3G

MEM2303M3G-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2303M3G
  • PackageSOT-23-3
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.3V@250uA Current 4.2A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 58m Ω @ 10V, 4.2A Package SOT-23-3 MOSFET Brand MICRONE Nanjing Weimeng MEM2303M3G Series MEM2303
  • PDF MEM2303M3G.pdf
Consultation
MEM2310M3G

MEM2310M3G-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2310M3G
  • PackageSOT-23-3
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 5.8A Power (Pd) 1.4W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 30m Ω @ 10V, 5.8A Package SOT-23-3 MOSFET Brand MICRONE Nanjing Weimeng MEM2310M3G Series MEM2310
  • PDF MEM2310M3G.pdf
Consultation
MEM2302M3G

MEM2302M3G-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2302M3G
  • PackageSOT-23-3
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 850mV@250uA Current 3A Power (Pd) 700mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 50m Ω @ 4.5V, 3A Package SOT-23-3 MOSFET Brand MICRONE Nanjing Weimeng MEM2302M3G Series MEM2302
  • PDF MEM2302M3G.pdf
Consultation
MEM2307XG

MEM2307XG-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2307XG
  • PackageSOT-23
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 4.1A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 88m Ω @ 10V, 4.1A Package SOT-23 MOSFET Brand MICRONE Nanjing Weimeng MEM2307XG Series MEM2307
  • PDF MEM2307XG.pdf
Consultation
MEM2307M3G

MEM2307M3G-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2307M3G
  • PackageSOT-23-3
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 4.1A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 88m Ω @ 10V, 4.1A Package SOT-23-3 MOSFET Brand MICRONE Nanjing Weimeng MEM2307M3G Series MEM2307
  • PDF MEM2307M3G.pdf
Consultation
MEM2302XG-N

MEM2302XG-N-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2302XG-N
  • PackageSOT-23
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 850mV@250uA Current 3A power (Pd) 700mW channel N conduction resistance (RDS (on) @ Vgs, Id) 50m Ω @ 4.5V, 3A package SOT-23 field-effect transistor (MOSFET) brand MICRONE Nanjing Weimeng MEM2302XG-N series MEM2302
  • PDF MEM2302XG-N.pdf
Consultation
MEM2402K3G

MEM2402K3G-MICRONE

  • TypeTriode/MOS transistor/transistor
  • ModelMEM2402K3G
  • PackageTO-252
  • ManufacturerMICRONE
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.2V@250uA Current 15A Power (Pd) 23W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 36m Ω @ 10V, 12A Package TO-252 MOSFET Brand MICRONE Nanjing Weimeng MEM2402K3G Series MEM2402
  • PDF MEM2402K3G.pdf
Consultation
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