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STD1NK60T4

STD1NK60T4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD1NK60T4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD1NK60T4封装DPAK类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)1A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)8.5Ω@10V,500mA阈值电压(Vgs(th)@Id)3.7V@250uA栅极电荷(Qg@Vgs)10nC@10V输入电容(Ciss@Vds)156pF@25V工作温度-55…
  • PDF STD1NK60T4.pdf
STN3N40K3

STN3N40K3-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTN3N40K3
  • PackageSOT-223
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STN3N40K3封装SOT-223类型1个N沟道漏源电压(Vdss)400V连续漏极电流(Id)1.8A功率(Pd)3.3W导通电阻(RDS(on)@Vgs,Id)3.4Ω@10V,600mA阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)11nC@10V输入电容(Ciss@Vds)165pF@50V工作温度…
  • PDF STN3N40K3.pdf
STD10N60M2

STD10N60M2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD10N60M2
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD10N60M2封装DPAK类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)7.5A功率(Pd)85W导通电阻(RDS(on)@Vgs,Id)600mΩ@3A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)13.5nC@10V输入电容(Ciss@Vds)400pF@100V工作温度-5…
  • PDF STD10N60M2.pdf
STP80NF70

STP80NF70-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP80NF70
  • PackageTO-220AB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP80NF70封装TO-220AB-3类型1个N沟道漏源电压(Vdss)68V连续漏极电流(Id)98A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)9.8mΩ@10V,40A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)75nC@10V输入电容(Ciss@Vds)2.55nF@25V工作温度…
  • PDF STP80NF70.pdf
STD10NM60N

STD10NM60N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD10NM60N
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD10NM60N封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)10A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)550mΩ@10V,4A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)19nC@10V输入电容(Ciss@Vds)540pF@50V工作…
  • PDF STD10NM60N.pdf
STL140N6F7

STL140N6F7-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL140N6F7
  • PackagePDFN-8(5x5.8)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL140N6F7封装PDFN-8(5x5.8)类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)145A功率(Pd)4.8W导通电阻(RDS(on)@Vgs,Id)2.5mΩ@10V,16A阈值电压(Vgs(th)@Id)4V@1mA
  • PDF STL140N6F7.pdf
STD10NF30

STD10NF30-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD10NF30
  • PackageTO-252(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD10NF30封装TO-252(DPAK)类型1个N沟道漏源电压(Vdss)300V连续漏极电流(Id)10A功率(Pd)103W导通电阻(RDS(on)@Vgs,Id)330mΩ@5A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)23nC@10V输入电容(Ciss@Vds)780pF@25V工作温…
  • PDF STD10NF30.pdf
STF18N60M2

STF18N60M2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF18N60M2
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF18N60M2封装TO-220F-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)13A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)280mΩ@10V,6.5A阈值电压(Vgs(th)@Id)4V@250uA
  • PDF STF18N60M2.pdf
STS2DNF30L

STS2DNF30L-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTS2DNF30L
  • PackageSO-8
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STS2DNF30L封装SO-8类型2个N沟道漏源电压(Vdss)30V连续漏极电流(Id)3A功率(Pd)2W导通电阻(RDS(on)@Vgs,Id)110mΩ@10V,1A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)4.5nC@10V输入电容(Ciss@Vds)121pF@25V工作温度-55℃~…
  • PDF STS2DNF30L.pdf
STW24N60M2

STW24N60M2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW24N60M2
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW24N60M2封装TO-247-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)18A功率(Pd)150W导通电阻(RDS(on)@Vgs,Id)190mΩ@9A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)29nC@10V输入电容(Ciss@Vds)1.06nF@100V反向传输…
  • PDF STW24N60M2.pdf
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