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STS6NF20V

STS6NF20V-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTS6NF20V
  • PackageSO-8
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STS6NF20V封装SO-8类型1个N沟道漏源电压(Vdss)20V连续漏极电流(Id)6A功率(Pd)2.5W导通电阻(RDS(on)@Vgs,Id)40mΩ@4.5V,3A阈值电压(Vgs(th)@Id)600mV@250uA栅极电荷(Qg@Vgs)11.5nC@4.5V输入电容(Ciss@Vds)460pF@15V
  • PDF STS6NF20V.pdf
Consultation
STW48NM60N

STW48NM60N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW48NM60N
  • PackageTO-247AC-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW48NM60N封装TO-247AC-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)44A功率(Pd)330W导通电阻(RDS(on)@Vgs,Id)70mΩ@10V,20A阈值电压(Vgs(th)@Id)4V@250uA
  • PDF STW48NM60N.pdf
Consultation
STD3NK90ZT4

STD3NK90ZT4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD3NK90ZT4
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD3NK90ZT4封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)3A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)4.8Ω@10V,1.5A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)22.7nC@10V输入电容(Ciss@Vds)590pF@25V…
  • PDF STD3NK90ZT4.pdf
Consultation
STP6NK90Z

STP6NK90Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP6NK90Z
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP6NK90Z封装TO-220类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)5.8A功率(Pd)140W导通电阻(RDS(on)@Vgs,Id)2Ω@10V,2.9A阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)60.5nC@10V输入电容(Ciss@Vds)1.35nF@25V工作温度…
  • PDF STP6NK90Z.pdf
Consultation
STP10NK60ZFP

STP10NK60ZFP-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP10NK60ZFP
  • PackageTO-220F
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP10NK60ZFP封装TO-220F类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)10A功率(Pd)35W导通电阻(RDS(on)@Vgs,Id)750mΩ@10V,4.5A阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)70nC@10V输入电容(Ciss@Vds)1.37nF@25V工作…
  • PDF STP10NK60ZFP.pdf
Consultation
STW20NK50Z

STW20NK50Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW20NK50Z
  • PackageTO-247AC-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW20NK50Z封装TO-247AC-3类型1个N沟道漏源电压(Vdss)500V连续漏极电流(Id)17A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)270mΩ@10V,8.5A阈值电压(Vgs(th)@Id)4.5V@100uA
  • PDF STW20NK50Z.pdf
Consultation
STF13N65M2

STF13N65M2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF13N65M2
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF13N65M2封装TO-220FP类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)10A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)430mΩ@5A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)590pF@100V反向传输电…
  • PDF STF13N65M2.pdf
Consultation
STB6NK90ZT4

STB6NK90ZT4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTB6NK90ZT4
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB6NK90ZT4封装D2PAK类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)5.8A功率(Pd)140W导通电阻(RDS(on)@Vgs,Id)2Ω@2.9A,10V阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)60.5nC@10V输入电容(Ciss@Vds)1.35nF@25V反向传…
  • PDF STB6NK90ZT4.pdf
Consultation
STD45P4LLF6AG

STD45P4LLF6AG-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD45P4LLF6AG
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD45P4LLF6AG封装DPAK类型1个P沟道漏源电压(Vdss)40V连续漏极电流(Id)50A功率(Pd)58W导通电阻(RDS(on)@Vgs,Id)15mΩ@25A,10V阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)65.5nC@10V输入电容(Ciss@Vds)3.525nF@25V工作温…
  • PDF STD45P4LLF6AG.pdf
Consultation
STD40NF10

STD40NF10-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD40NF10
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD40NF10封装DPAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)50A功率(Pd)125W导通电阻(RDS(on)@Vgs,Id)25mΩ@10V,25A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)62nC@10V输入电容(Ciss@Vds)2.18nF@25V反向传输电容(…
  • PDF STD40NF10.pdf
Consultation
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