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Home > All Products > Triode/MOS transistor/transistor
STB15N80K5

STB15N80K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTB15N80K5
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB15N80K5封装D2PAK类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)14A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)300mΩ@10V,7A阈值电压(Vgs(th)@Id)4V@100uA栅极电荷(Qg@Vgs)32nC@10V输入电容(Ciss@Vds)1.1nF@100v反向传输电容…
  • PDF STB15N80K5.pdf
Consultation
STD120N4F6

STD120N4F6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD120N4F6
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD120N4F6封装DPAK类型1个N沟道漏源电压(Vdss)40V连续漏极电流(Id)80A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)4mΩ@40A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)65nC@10V输入电容(Ciss@Vds)3.85nF@25V工作温度-55℃~…
  • PDF STD120N4F6.pdf
Consultation
STN4NF06L

STN4NF06L-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTN4NF06L
  • PackageTO-261-4
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STN4NF06L封装TO-261-4类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)4A功率(Pd)3.3W导通电阻(RDS(on)@Vgs,Id)100mΩ@1.5A,10V阈值电压(Vgs(th)@Id)2.8V@250uA栅极电荷(Qg@Vgs)9nC@5V输入电容(Ciss@Vds)340pF@25V工作温度-5…
  • PDF STN4NF06L.pdf
Consultation
STP16NF06L

STP16NF06L-TI(德州仪器)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP16NF06L
  • PackageTO-220
  • ManufacturerTI(德州仪器)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP16NF06L封装TO-220类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)16A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)90mΩ@10V,8A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)10nC@5V输入电容(Ciss@Vds)345pF@25V工作温度-55℃…
  • PDF STP16NF06L.pdf
Consultation
STP150N10F7

STP150N10F7-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP150N10F7
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP150N10F7封装TO-220类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)110A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)4.2mΩ@10V,55A阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)117nC@10V输入电容(Ciss@Vds)8.115nF@50V工作…
  • PDF STP150N10F7.pdf
Consultation
STP40NF10

STP40NF10-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP40NF10
  • PackageTO-220AB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP40NF10封装TO-220AB-3类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)50A功率(Pd)150W导通电阻(RDS(on)@Vgs,Id)25mΩ@10V,25A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)62nC@10V输入电容(Ciss@Vds)2.18nF@25V反向传输…
  • PDF STP40NF10.pdf
Consultation
STW11NM80

STW11NM80-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW11NM80
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW11NM80封装TO-247-3类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)11A功率(Pd)150W导通电阻(RDS(on)@Vgs,Id)350mΩ@10V,5.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)43.6nC@10V输入电容(Ciss@Vds)1.63nF@25V反向传…
  • PDF STW11NM80.pdf
Consultation
STP100N10F7

STP100N10F7-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP100N10F7
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP100N10F7封装TO-247-3类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)80A功率(Pd)150W导通电阻(RDS(on)@Vgs,Id)8mΩ@40A,10V阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)61nC@10V输入电容(Ciss@Vds)4.369nF@50V工作温…
  • PDF STP100N10F7.pdf
Consultation
STF22NM60N

STF22NM60N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF22NM60N
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF22NM60N封装TO-220F-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)16A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)220mΩ@10V,8A阈值电压(Vgs(th)@Id)4V@100uA
  • PDF STF22NM60N.pdf
Consultation
STD25NF20

STD25NF20-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD25NF20
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD25NF20封装DPAK类型1个N沟道漏源电压(Vdss)200V连续漏极电流(Id)18A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)125mΩ@10V,10A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)39nC@10V输入电容(Ciss@Vds)940pF@25V工作温度-55℃…
  • PDF STD25NF20.pdf
Consultation
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