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STP90NF03L-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTP90NF03L
- PackageTO-220
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP90NF03L封装TO-220类型1个N沟道漏源电压(Vdss)30V连续漏极电流(Id)90A功率(Pd)150W导通电阻(RDS(on)@Vgs,Id)6.5mΩ@10V,45A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)47nC@5V输入电容(Ciss@Vds)2.7nF@25V工作温度-6…
- PDF
STP90NF03L.pdf
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STD2NK90ZT4-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTD2NK90ZT4
- PackageTO-252
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD2NK90ZT4封装TO-252类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)2.1A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)5Ω@10V,1.05A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)27nC@10V输入电容(Ciss@Vds)485pF@25V反向传输电…
- PDF
STD2NK90ZT4.pdf
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STD5N20LT4-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTD5N20LT4
- PackageDPAK
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD5N20LT4封装DPAK类型1个N沟道漏源电压(Vdss)200V连续漏极电流(Id)5A功率(Pd)33W导通电阻(RDS(on)@Vgs,Id)700mΩ@5V,2.5A阈值电压(Vgs(th)@Id)2.5V@50uA栅极电荷(Qg@Vgs)6nC@5V输入电容(Ciss@Vds)242pF@25V工作温度-55℃~+…
- PDF
STD5N20LT4.pdf
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STW70N60M2-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTW70N60M2
- PackageTO-247-3
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW70N60M2封装TO-247-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)68A功率(Pd)450W导通电阻(RDS(on)@Vgs,Id)40mΩ@10V,34A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)118nC@10V输入电容(Ciss@Vds)5.2nF@100V工作温度…
- PDF
STW70N60M2.pdf
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STD2N95K5-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTD2N95K5
- PackageDPAK
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD2N95K5封装DPAK类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)2A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)5Ω@10V,1A阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)10nC@10V输入电容(Ciss@Vds)105pF@100V工作温度-55℃~+150…
- PDF
STD2N95K5.pdf
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STF8N80K5-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTF8N80K5
- PackageTO-220F-3
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF8N80K5封装TO-220F-3类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)6A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)950mΩ@10V,3A阈值电压(Vgs(th)@Id)5V@100uA
- PDF
STF8N80K5.pdf
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STP15810-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTP15810
- PackageTO-220
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP15810封装TO-220类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)110A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)4.2mΩ@10V,55A阈值电压(Vgs(th)@Id)4.5V@250uA
- PDF
STP15810.pdf
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STN3P6F6-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTN3P6F6
- PackageSOT-223
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STN3P6F6封装SOT-223类型1个P沟道漏源电压(Vdss)60V连续漏极电流(Id)3A功率(Pd)2.6W导通电阻(RDS(on)@Vgs,Id)160mΩ@10V,1.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)6.4nC@10V输入电容(Ciss@Vds)340pF@48V工作温度-55…
- PDF
STN3P6F6.pdf
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STL220N6F7-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTL220N6F7
- PackageDFN-8(5x6)
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL220N6F7封装DFN-8(5x6)FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）60 V25°C 时电流 - 连续漏极 (Id)120A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）1.4 毫欧 @ 20A，…
- PDF
STL220N6F7.pdf
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STD1NK60T4-ST(意法半导体)
- TypeTriode/MOS transistor/transistor
- ModelSTD1NK60T4
- PackageDPAK
- ManufacturerST(意法半导体)
- Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD1NK60T4封装DPAK类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)1A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)8.5Ω@10V,500mA阈值电压(Vgs(th)@Id)3.7V@250uA栅极电荷(Qg@Vgs)10nC@10V输入电容(Ciss@Vds)156pF@25V工作温度-55…
- PDF
STD1NK60T4.pdf
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