About Us Contact Us 1986587488919865874889
Language
One stop service platform for electronic components
STM32F405RGT6 STM32F103C8T6 STM32F103RCT6 STM32F103RBT6 ICM-42688-P
BOMBOM
All Products
Home Manufacturer Products BOM Blog Solution About Us Contact Us
Home > All Products > Triode/MOS transistor/transistor
STN1NK80Z

STN1NK80Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTN1NK80Z
  • PackageSOT-223-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STN1NK80Z封装SOT-223-3类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)250mA功率(Pd)2.5W导通电阻(RDS(on)@Vgs,Id)16Ω@10V,500mA阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)7.7nC@10V输入电容(Ciss@Vds)160pF@25V工作…
  • PDF STN1NK80Z.pdf
Consultation
STD100N10F7

STD100N10F7-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD100N10F7
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD100N10F7封装DPAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)80A功率(Pd)120W导通电阻(RDS(on)@Vgs,Id)8mΩ@10V,40A阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)61nC@10V输入电容(Ciss@Vds)4.369nF@50V工作温度-…
  • PDF STD100N10F7.pdf
Consultation
STD10NF10T4

STD10NF10T4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD10NF10T4
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD10NF10T4封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)13A功率(Pd)50W导通电阻(RDS(on)@Vgs,Id)130mΩ@10V,5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)21nC@10V输入电容(Ciss@Vds)460pF@25V工作…
  • PDF STD10NF10T4.pdf
Consultation
STF13N60M2

STF13N60M2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF13N60M2
  • PackageTO-220FPAB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF13N60M2封装TO-220FPAB-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)11A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)380mΩ@10V,5.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)580pF@100V工作…
  • PDF STF13N60M2.pdf
Consultation
STB55NF06T4

STB55NF06T4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTB55NF06T4
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB55NF06T4封装D2PAK类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)50A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)18mΩ@10V,27.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)60nC@10V输入电容(Ciss@Vds)1.3nF@25V工作温度-5…
  • PDF STB55NF06T4.pdf
Consultation
STP110N7F6

STP110N7F6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP110N7F6
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP110N7F6封装TO-220类型1个N沟道漏源电压(Vdss)68V连续漏极电流(Id)110A功率(Pd)176W导通电阻(RDS(on)@Vgs,Id)5.5mΩ@10V,55A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)100nC@10V输入电容(Ciss@Vds)5.85nF@25V反向传输…
  • PDF STP110N7F6.pdf
Consultation
STP5NK52ZD

STP5NK52ZD-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP5NK52ZD
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP5NK52ZD封装TO-220类型1个N沟道漏源电压(Vdss)520V连续漏极电流(Id)4.4A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)1.22Ω@10V,2.2A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)16.9nC@10V输入电容(Ciss@Vds)529pF@25V反向传…
  • PDF STP5NK52ZD.pdf
Consultation
STD13NM60N

STD13NM60N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD13NM60N
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD13NM60N封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)11A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)360mΩ@5.5A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)30nC@10V输入电容(Ciss@Vds)790pF@50V
  • PDF STD13NM60N.pdf
Consultation
STD20NF06LT4

STD20NF06LT4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD20NF06LT4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD20NF06LT4封装DPAK类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)24A功率(Pd)60W导通电阻(RDS(on)@Vgs,Id)40mΩ@10V,12A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)13nC@10V输入电容(Ciss@Vds)660pF@25V工作温度-55…
  • PDF STD20NF06LT4.pdf
Consultation
STD110N8F6

STD110N8F6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD110N8F6
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD110N8F6封装DPAK类型1个N沟道漏源电压(Vdss)80V连续漏极电流(Id)80A功率(Pd)167W导通电阻(RDS(on)@Vgs,Id)6.5mΩ@40A,10V阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)150nC@10V输入电容(Ciss@Vds)9.13nF@40V反向传输电…
  • PDF STD110N8F6.pdf
Consultation
Total 1237 Records«Prev1... 103104105106107108109110...124Next»
Shenzhen Huaxin chuangyou electronics co., ltd