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STD13N60M2

STD13N60M2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD13N60M2
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD13N60M2封装DPAK类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)11A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)380mΩ@10V,5.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)580pF@100V工作温度-5…
  • PDF STD13N60M2.pdf
Consultation
STW70N60DM2

STW70N60DM2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW70N60DM2
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW70N60DM2封装TO-247-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)66A功率(Pd)446W导通电阻(RDS(on)@Vgs,Id)42mΩ@10V,33A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)121nC@10V输入电容(Ciss@Vds)5.508nF@100V工作…
  • PDF STW70N60DM2.pdf
Consultation
STD10P6F6

STD10P6F6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD10P6F6
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD10P6F6封装DPAK类型1个P沟道漏源电压(Vdss)60V连续漏极电流(Id)10A功率(Pd)35W导通电阻(RDS(on)@Vgs,Id)160mΩ@10V,5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)6.4nC@10V输入电容(Ciss@Vds)340pF@48V
  • PDF STD10P6F6.pdf
Consultation
STF26NM60N

STF26NM60N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF26NM60N
  • PackageTO-220F
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF26NM60N封装TO-220F类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)20A功率(Pd)35W导通电阻(RDS(on)@Vgs,Id)165mΩ@10V,10A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)60nC@10V输入电容(Ciss@Vds)1.8nF@50V
  • PDF STF26NM60N.pdf
Consultation
IRF630

IRF630-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelIRF630
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号IRF630封装TO-220类型1个N沟道漏源电压(Vdss)200V连续漏极电流(Id)9A功率(Pd)75W导通电阻(RDS(on)@Vgs,Id)400mΩ@10V,4.5A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)45nC@10V输入电容(Ciss@Vds)700pF@25V工作温度-65℃~+…
  • PDF IRF630.pdf
Consultation
STW9NK90Z

STW9NK90Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW9NK90Z
  • PackageTO-247AC-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW9NK90Z封装TO-247AC-3类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)8A功率(Pd)160W导通电阻(RDS(on)@Vgs,Id)1.3Ω@10V,3.6A阈值电压(Vgs(th)@Id)4.5V@100uA
  • PDF STW9NK90Z.pdf
Consultation
STF6N95K5

STF6N95K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF6N95K5
  • PackageTO-220FPAB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF6N95K5封装TO-220FPAB-3类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)9A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)1.25Ω@10V,3A阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)13nC@10V输入电容(Ciss@Vds)450pF@100V工作温度…
  • PDF STF6N95K5.pdf
Consultation
STW20NM60

STW20NM60-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW20NM60
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW20NM60封装TO-247-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)20A功率(Pd)192W导通电阻(RDS(on)@Vgs,Id)290mΩ@10V,10A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)54nC@10V输入电容(Ciss@Vds)1.5nF@25V
  • PDF STW20NM60.pdf
Consultation
STW20NM60

STW20NM60-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW20NM60
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW20NM60封装TO-247-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)20A功率(Pd)192W导通电阻(RDS(on)@Vgs,Id)290mΩ@10V,10A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)54nC@10V输入电容(Ciss@Vds)1.5nF@25V
  • PDF STW20NM60.pdf
Consultation
STN1NK60Z

STN1NK60Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTN1NK60Z
  • PackageSOT-223
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STN1NK60Z封装SOT-223类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)300mA功率(Pd)3.3W导通电阻(RDS(on)@Vgs,Id)15Ω@400mA,10V阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)6.9nC@10V输入电容(Ciss@Vds)94pF@25V反向传输…
  • PDF STN1NK60Z.pdf
Consultation
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