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Home > All Products > Triode/MOS transistor/transistor
STP11N65M5

STP11N65M5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP11N65M5
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP11N65M5封装TO-220类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)9A功率(Pd)85W导通电阻(RDS(on)@Vgs,Id)480mΩ@4.5A,10V阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)644pF@100V反向传输电…
  • PDF STP11N65M5.pdf
Consultation
STL20N6F7

STL20N6F7-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL20N6F7
  • PackageVDFN-8-Power
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL20N6F7封装VDFN-8-Power类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)100A功率(Pd)3W；78W导通电阻(RDS(on)@Vgs,Id)5.4mΩ@10A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)25nC@10V输入电容(Ciss@Vds)1.6nF@25V工…
  • PDF STL20N6F7.pdf
Consultation
STD3NK80ZT4

STD3NK80ZT4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD3NK80ZT4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD3NK80ZT4封装DPAK类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)2.5A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)4.5Ω@1.25A,10V阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)19nC@10V输入电容(Ciss@Vds)485pF@25V反向传输电…
  • PDF STD3NK80ZT4.pdf
Consultation
STP20NK50Z

STP20NK50Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP20NK50Z
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP20NK50Z封装TO-220类型1个N沟道漏源电压(Vdss)500V连续漏极电流(Id)17A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)270mΩ@10V,8.5A阈值电压(Vgs(th)@Id)4.5V@100uA
  • PDF STP20NK50Z.pdf
Consultation
STF5N80K5

STF5N80K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF5N80K5
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF5N80K5封装TO-220FP类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)4A功率(Pd)20W导通电阻(RDS(on)@Vgs,Id)1.5Ω@10V,2A阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)5nC@10V输入电容(Ciss@Vds)177pF@100V反向传输电容(…
  • PDF STF5N80K5.pdf
Consultation
STL3NM60N

STL3NM60N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL3NM60N
  • PackagePowerFLAT-8(3.3x3.3)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL3NM60N封装PowerFLAT-8(3.3x3.3)FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）600 V25°C 时电流 - 连续漏极 (Id)650mA（Ta），2.2A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最…
  • PDF STL3NM60N.pdf
Consultation
STP80NF06

STP80NF06-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP80NF06
  • PackageTO-220AB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP80NF06封装TO-220AB-3类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)80A功率(Pd)300W导通电阻(RDS(on)@Vgs,Id)8mΩ@10V,40A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)150nC@10V输入电容(Ciss@Vds)3.85nF@25V
  • PDF STP80NF06.pdf
Consultation
STP11NK40ZFP

STP11NK40ZFP-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP11NK40ZFP
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP11NK40ZFP封装TO-220F-3类型1个N沟道漏源电压(Vdss)400V连续漏极电流(Id)9A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)550mΩ@10V,4.5A阈值电压(Vgs(th)@Id)4.5V@100uA
  • PDF STP11NK40ZFP.pdf
Consultation
STD6NF10T4

STD6NF10T4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD6NF10T4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD6NF10T4封装DPAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)6A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)250mΩ@10V,3A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)14nC@10V输入电容(Ciss@Vds)280pF@25V工作温度-65℃~+…
  • PDF STD6NF10T4.pdf
Consultation
STW12NK90Z

STW12NK90Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW12NK90Z
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW12NK90Z封装TO-247-3类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)11A功率(Pd)230W导通电阻(RDS(on)@Vgs,Id)880mΩ@10V,5.5A阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)152nC@10V输入电容(Ciss@Vds)3.5nF@25V工作…
  • PDF STW12NK90Z.pdf
Consultation
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