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DIODES(美台)

DIODES(美台)

DMP31D7L-7

DMP31D7L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP31D7L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.6V@250uA Current 580mA Power (Pd) 430mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 900m Ω @ 420mA, 10V Package SOT-23 MOSFET Brand DIODES (Meitai) DMP31D7L-7 Series DMP31D7L
  • PDF DMP31D7L-7.pdf
Consultation
DMP6023LFG-13

DMP6023LFG-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6023LFG-13
  • PackagePowerDI-3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 7.7A Power (Pd) 1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 5A, 10V Package PowerDI-3333-8 MOSFET Brand DIODES DMP6023LFG-13 Series DMP6023LFG
  • PDF DMP6023LFG-13.pdf
Consultation
DMP2160UFDB-7

DMP2160UFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2160UFDB-7
  • PackageU-DFN2020-6B
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 3.8A, power (Pd) 1.4W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 70m Ω @ 4.5V, 2.8A package U-DFN2020-6B, MOSFET brand DIODES (American) DMP2160UFDB-7 series DMP2160UFDB
  • PDF DMP2160UFDB-7.pdf
Consultation
DMC2450UV-7

DMC2450UV-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC2450UV-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 1.03A; 700mA Power (Pd) 450mW Channel 1 N and 1 P Conduction Resistance (RDS (on) @ Vgs, Id) 480m Ω @ 200mA, 5V Package SOT-563 MOSFET Brand DIODES DMC2450UV-7 Series DMC2450UV
  • PDF DMC2450UV-7.pdf
Consultation
DMP2002UPS-13

DMP2002UPS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2002UPS-13
  • PackagePowerDI5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 60A Power (Pd) 2.3W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 1.9m Ω @ 10V, 25A Package PowerDI5060-8 MOSFET Brand DIODES (American) DMP2002UPS-13 Series DMP2002UPS
  • PDF DMP2002UPS-13.pdf
Consultation
ZXMP6A13GTA

ZXMP6A13GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP6A13GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.7A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 390m Ω @ 900mA, 10V Package SOT-223 Field Effect Transistor (MOSFET) Brand DIODES (Meitai) ZXMP6A13GTA Series ZXMP6A13GTA
  • PDF ZXMP6A13GTA.pdf
Consultation
DMPH6050SPD-13

DMPH6050SPD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMPH6050SPD-13
  • PackagePowerDI-8(5x6)
  • ManufacturerDIODES(美台)
  • DescriptionWithstand voltage -60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current -26A -23A Power (Pd) 1.5W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 48m Ω @ VGS=-10V 60m Ω @ VGS=-4.5V Package PowerDI-8 (5x6) MOSFET Brand DIODES (USA) DMPH6050SPD-13 Series DMPH6050SPD
  • PDF DMPH6050SPD-13.pdf
Consultation
DMN7022LFG-7

DMN7022LFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN7022LFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 75V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 7.8A Power (Pd) 900mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 22m Ω @ 10V, 7.2A Package PowerDI3333-8 MOSFET Brand DIODES DMN7022LFG-7 Series DMN7022LFG
  • PDF DMN7022LFG-7.pdf
Consultation
ZVNL120A

ZVNL120A-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVNL120A
  • PackageTO-92-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 200V threshold voltage (Vgs (th) @ Id) 1.5V@1mA Current 180mA Power (Pd) 700mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 5V, 250mA Package TO-92-3 MOSFET Brand DIODES (USA) ZVNL120A Series ZVNL120A
  • PDF ZVNL120A.pdf
Consultation
DMG9926USD-13

DMG9926USD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG9926USD-13
  • PackageSOIC-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 8A, power (Pd) 1.3W, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 24m Ω @ 4.5V, 8.2A package SOIC-8 field-effect transistor (MOSFET) brand DIODES (USA) DMG9926USD-13 series DMG9926USD
  • PDF DMG9926USD-13.pdf
Consultation
DMN65D8LFB-7B

DMN65D8LFB-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN65D8LFB-7B
  • PackageX1-DFN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 260mA Power (Pd) 430mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3 Ω @ 10V, 115mA Package X1-DFN1006-3 MOSFET Brand DIODES DMN65D8LFB-7B Series DMN65D8LFB
  • PDF DMN65D8LFB-7B.pdf
Consultation
DMC3071LVT-7

DMC3071LVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC3071LVT-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 3.3A; 4.6A power (Pd) 700mW channel with 1 N and 1 P conducting resistor (RDS (on) @ Vgs, Id) 50m Ω @ 3.5A, 10V; 95m Ω @ 3.8A, 10V package SOT-26 MOSFET brand DIODES (Meitai) DMC3071LVT-7 series DMC3071LVT
  • PDF DMC3071LVT-7.pdf
Consultation
DMN6040SE-13

DMN6040SE-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6040SE-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 5A Power (Pd) 1.2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 40m Ω @ 12A, 10V Package SOT-223 MOSFET Brand DIODES DMN6040SE-13 Series DMN6040SE
  • PDF DMN6040SE-13.pdf
Consultation
ZXMC3A16DN8TA

ZXMC3A16DN8TA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMC3A16DN8TA
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4.9A; 4.1A power (Pd) 1.25W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 35m Ω @ 9A, 10V package SO-8 field-effect transistor (MOSFET) brand DIODES (American) ZXMC3A16DN8TA series ZXMC3A16DN8TA
  • PDF ZXMC3A16DN8TA.pdf
Consultation
DMP3130LQ-7

DMP3130LQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3130LQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.3V@250uA Current 3.5A Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 77m Ω @ 4.2A, 10V Package SOT-23 MOSFET Brand DIODES DMP3130LQ-7 Series DMP3130LQ
  • PDF DMP3130LQ-7.pdf
Consultation
DMN61D9UWQ-7

DMN61D9UWQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN61D9UWQ-7
  • PackageSOD-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 400mA Power (Pd) 440mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 50mA, 5V Package SOD-323 MOSFET Brand DIODES (Meitai) DMN61D9UWQ-7 Series DMN61D9UWQ
  • PDF DMN61D9UWQ-7.pdf
Consultation
2N7002VC-7

2N7002VC-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002VC-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 280mA, power (Pd) 150mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 7.5 Ω @ 5V, 50mA package SOT-563 MOSFET brand DIODES (American) 2N7002VC-7 series 2N7002VC
  • PDF 2N7002VC-7.pdf
Consultation
DMP2160UFDBQ-7

DMP2160UFDBQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2160UFDBQ-7
  • PackageDFN-6-EP(2x2)
  • ManufacturerDIODES(美台)
  • DescriptionWithstand voltage -20V threshold voltage (Vgs (th) @ Id) - current -3.8A -3.3A power (Pd) 1.4W channel P conduction resistance (RDS (on) @ Vgs, Id) 70m Ω @ VGS=-4.5V 85m Ω @ VGS=-2.5V package DFN-6-EP (2x2) MOSFET brand DIODES (US Taiwan) DMP2160UFDBQ-7 series DMP2160UFDBQ
  • PDF DMP2160UFDBQ-7.pdf
Consultation
DMN6040SVTQ-7

DMN6040SVTQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6040SVTQ-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 5A Power (Pd) 1.2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 44m Ω @ 10V, 4.3A Package SOT-26 MOSFET Brand DIODES DMN6040SVTQ-7 Series DMN6040SVTQ
  • PDF DMN6040SVTQ-7.pdf
Consultation
DMP2008UFG-7

DMP2008UFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2008UFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 14A; 54A power (Pd) 2.4W; 41W channel P conduction resistance (RDS (on) @ Vgs, Id) 8m Ω @ 4.5V, 12A package PowerDI3333-8 MOSFET brand DIODES (Meitai) DMP2008UFG-7 series DMP2008UFG
  • PDF DMP2008UFG-7.pdf
Consultation
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