About Us Contact Us 1986587488919865874889
Language
One stop service platform for electronic components
STM32F405RGT6 STM32F103C8T6 STM32F103RCT6 STM32F103RBT6 ICM-42688-P
BOMBOM
All Products
Home Manufacturer Products BOM Blog Solution About Us Contact Us
Home > Manufacturer > DIODES(美台)
DIODES(美台)

DIODES(美台)

DMC2041UFDB-7

DMC2041UFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC2041UFDB-7
  • PackageDFN2020-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 4.7A; 3.2A power (Pd) 1.4W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 40m Ω @ 4.2A, 4.5V package DFN2020-6 field-effect transistor (MOSFET) brand DIODES (American) DMC2041UFDB-7 series DMC2041UFDB
  • PDF DMC2041UFDB-7.pdf
Consultation
ZVP2106GTA

ZVP2106GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVP2106GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 450mA Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 500mA Package SOT-223 MOSFET Brand DIODES (Meitai) ZVP2106GTA Series ZVP2106GTA
  • PDF ZVP2106GTA.pdf
Consultation
DMG6898LSD-13

DMG6898LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6898LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 9.5A Power (Pd) 1.28W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 16m Ω @ 9.4A, 4.5V Package SO-8 MOSFET Brand DIODES (USA) DMG6898LSD-13 Series DMG6898LSD
  • PDF DMG6898LSD-13.pdf
Consultation
DMC67D8UFDBQ-7

DMC67D8UFDBQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC67D8UFDBQ-7
  • PackageDFN2020-6
  • ManufacturerDIODES(美台)
  • DescriptionWithstand voltage of 60V; 20V threshold voltage (Vgs (th) @ Id) 1.25V@250uA ； 2.5V@250uA Current 390mA; 2.9A power (Pd) 580mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 4 Ω @ 500mA, 10V; 72m Ω @ 3.5A, 4.5V package DFN2020-6 MOSFET brand DIODES (Meitai) DMC67D8UFDBQ-7 series DMC67D8UFDBQ
  • PDF DMC67D8UFDBQ-7.pdf
Consultation
DMN3028LQ-7

DMN3028LQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3028LQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.8V@250uA Current 6.2A Power (Pd) 860mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 4A, 10V Package SOT-23 MOSFET Brand DIODES DMN3028LQ-7 Series DMN3028LQ
  • PDF DMN3028LQ-7.pdf
Consultation
DMP2240UW-7

DMP2240UW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2240UW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.5A Power (Pd) 250mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 150m Ω @ 4.5V, 2A Package SOT-323 MOSFET Brand DIODES (Meitai) DMP2240UW-7 Series DMP2240UW
  • PDF DMP2240UW-7.pdf
Consultation
DMN65D8LW-7

DMN65D8LW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN65D8LW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 300mA Power (Pd) 300mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3 Ω @ 10V, 115mA Package SOT-323 MOSFET Brand DIODES (Meitai) DMN65D8LW-7 Series DMN65D8LW
  • PDF DMN65D8LW-7.pdf
Consultation
BS107P

BS107P-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBS107P
  • PackageTO-92-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 200V threshold voltage (Vgs (th) @ Id) - current 120mA power (Pd) 500mW channel N conduction resistance (RDS (on) @ Vgs, Id) 30 Ω @ 5V, 100mA package TO-92-3 MOSFET brand DIODES (USA) BS107P series BS107P
  • PDF BS107P.pdf
Consultation
DMN100-7-F

DMN100-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN100-7-F
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@1mA Current 1.1A Power (Pd) 500mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 240m Ω @ 10V, 1A Package SOT-23 MOSFET Brand DIODES DMN100-7-F Series DMN100
  • PDF DMN100-7-F.pdf
Consultation
DMP2100U-7

DMP2100U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2100U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 4.3A Power (Pd) 800mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 38m Ω @ 10V, 3.5A Package SOT-23 MOSFET Brand DIODES DMP2100U-7 Series DMP2100U
  • PDF DMP2100U-7.pdf
Consultation
DMC2020USD-13

DMC2020USD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC2020USD-13
  • PackageSOIC-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 7.8A; 6.3A power (Pd) 1.8W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 20m Ω @ 7A, 4.5V package SOIC-8 field-effect transistor (MOSFET) brand DIODES (USA) DMC2020USD-13 series DMC2020USD
  • PDF DMC2020USD-13.pdf
Consultation
ZXMP6A18KTC

ZXMP6A18KTC-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP6A18KTC
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 6.8A Power (Pd) 2.15W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 55m Ω @ 10V, 3.5A Package TO-252 MOSFET Brand DIODES (USA) ZXMP6A18KTC Series ZXMP6A18KTC
  • PDF ZXMP6A18KTC.pdf
Consultation
DMN3033LSN-7

DMN3033LSN-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3033LSN-7
  • PackageSC-59
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 6A power (Pd) 1.4W channel N conduction resistance (RDS (on) @ Vgs, Id) 30m Ω @ 10V, 6A package SC-59 field-effect transistor (MOSFET) brand DIODES (American) DMN3033LSN-7 series DMN3033LSN
  • PDF DMN3033LSN-7.pdf
Consultation
DMC3730UFL3-7

DMC3730UFL3-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC3730UFL3-7
  • PackageX2-DFN1310-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 1.1A; 700mA power (Pd) 390mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 460m Ω @ 200mA, 4.5V package X2-DFN1310-6 MOSFET brand DIODES (Meitai) DMC3730UFL3-7 series DMC3730UFL3
  • PDF DMC3730UFL3-7.pdf
Consultation
ZVN4310GTA

ZVN4310GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN4310GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@1mA Current 1.67A Power (Pd) 3W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 540m Ω @ 10V, 3.3A Package SOT-223 MOSFET Brand DIODES (Meitai) ZVN4310GTA Series ZVN4310GTA
  • PDF ZVN4310GTA.pdf
Consultation
DMN601VK-7

DMN601VK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN601VK-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 305mA, power (Pd) 250mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 2 Ω @ 10V, 500mA package SOT-563 MOSFET brand DIODES (Meitai) DMN601VK-7 series DMN601VK
  • PDF DMN601VK-7.pdf
Consultation
DMN2075U-7

DMN2075U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2075U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4.2A Power (Pd) 800mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 38m Ω @ 4.5V, 3.6A Package SOT-23 MOSFET Brand DIODES (American) DMN2075U-7 Series DMN2075U
  • PDF DMN2075U-7.pdf
Consultation
DMN26D0UDJ-7

DMN26D0UDJ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN26D0UDJ-7
  • PackageSOT-963-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.05V@250uA Current 240mA, power (Pd) 300mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 3 Ω @ 4.5V, 100mA package SOT-963-6 MOSFET brand DIODES (American) DMN26D0UDJ-7 series DMN26D0UDJ
  • PDF DMN26D0UDJ-7.pdf
Consultation
DMP2130LDM-7

DMP2130LDM-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2130LDM-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.25V@250uA Current 3.4A Power (Pd) 1.25W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 80m Ω @ 4.5V, 4.5A Package SOT-23-6 MOSFET Brand DIODES DMP2130LDM-7 Series DMP2130LDM
  • PDF DMP2130LDM-7.pdf
Consultation
DMP2225L-7

DMP2225L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2225L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.25V@250uA Current 2.6A Power (Pd) 1.08W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 110m Ω @ 4.5V, 2.6A Package SOT-23 MOSFET Brand DIODES (American) DMP2225L-7 Series DMP2225L
  • PDF DMP2225L-7.pdf
Consultation
共528记录«上一页1... 1617181920212223...27下一页»
Shenzhen Huaxin chuangyou electronics co., ltd