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DIODES(美台)

DIODES(美台)

DMTH10H1M7STLW-13

DMTH10H1M7STLW-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH10H1M7STLW-13
  • PackagePowerDI1012-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 250A, power (Pd) 6W; 250W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2m Ω Package PowerDI1012-8 MOSFET Brand DIODES DMTH10H1M7STLW-13 Series DMTH10H1M7STLW
  • PDF DMTH10H1M7STLW-13.pdf
Consultation
DMT3020LSDQ-13

DMT3020LSDQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT3020LSDQ-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 16A Power (Pd) 1W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 20m Ω @ 9A, 10V Package SO-8 MOSFET Brand DIODES (Meitai) DMT3020LSDQ-13 Series DMT3020LSDQ
  • PDF DMT3020LSDQ-13.pdf
Consultation
DMN2004DWK-7

DMN2004DWK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2004DWK-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 540mA Power (Pd) 200mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 550m Ω @ 4.5V, 540mA Package SOT-363 MOSFET Brand DIODES (USA) DMN2004DWK-7 Series DMN2004DWK
  • PDF DMN2004DWK-7.pdf
Consultation
DMN62D0UDW-7

DMN62D0UDW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN62D0UDW-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 350mA, power (Pd) 320mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 2 Ω @ 100mA, 4.5V package SOT-363 MOSFET brand DIODES (Meitai) DMN62D0UDW-7 series DMN62D0UDW
  • PDF DMN62D0UDW-7.pdf
Consultation
DMN6040SSDQ-13

DMN6040SSDQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6040SSDQ-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 5A power (Pd) 1.3W channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 40m Ω @ 10V, 4.5A package SO-8 field-effect transistor (MOSFET) brand DIODES (Meitai) DMN6040SSDQ-13 series DMN6040SSDQ
  • PDF DMN6040SSDQ-13.pdf
Consultation
2N7002AQ-7

2N7002AQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002AQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 180mA Power (Pd) 370mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 115mA Package SOT-23 MOSFET Brand DIODES (USA) 2N7002AQ-7 Series 2N7002AQ
  • PDF 2N7002AQ-7.pdf
Consultation
ZXM61N03F

ZXM61N03F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXM61N03F
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionWithstand voltage 30V threshold voltage (Vgs (th) @ Id) - current 1.4A power (Pd) 625mW channel N conduction resistance (RDS (on) @ Vgs, Id) 220m Ω packaged SOT-23 field-effect transistor (MOSFET) brand DIODES (Meitai) ZXM61N03F series ZXM61N03F
  • PDF ZXM61N03F.pdf
Consultation
DMC2053UVTQ-7

DMC2053UVTQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC2053UVTQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4.6A; 3.2A power (Pd) 700mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 35m Ω @ 5A, 4.5V; 74m Ω @ 3.5A, 4.5V package SOT-23 MOSFET brand DIODES (Meitai) DMC2053UVTQ-7 series DMC2053UVTQ
  • PDF DMC2053UVTQ-7.pdf
Consultation
DMN61D8LQ-7

DMN61D8LQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN61D8LQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 470mA Power (Pd) 390mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1.8 Ω @ 150mA, 5V Package SOT-23 MOSFET Brand DIODES (Meitai) DMN61D8LQ-7 Series DMN61D8LQ
  • PDF DMN61D8LQ-7.pdf
Consultation
BSS127SSN-7

BSS127SSN-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS127SSN-7
  • PackageSC-59
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) 4.5V@250uA Current 70mA Power (Pd) 610mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 80 Ω @ 10V, 16mA Package SC-59 Field Effect Transistor (MOSFET) Brand DIODES (American) BSS127SSN-7 Series BSS127SSN
  • PDF BSS127SSN-7.pdf
Consultation
DMP3007SCGQ-7

DMP3007SCGQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3007SCGQ-7
  • PackageV-DFN3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 50A Power (Pd) 1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 6.8m Ω @ 11.5A, 10V Package V-DFN3333-8 MOSFET Brand DIODES DMP3007SCGQ-7 Series DMP3007SCGQ
  • PDF DMP3007SCGQ-7.pdf
Consultation
DMP2004WK-7

DMP2004WK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2004WK-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 400mA Power (Pd) 250mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 900m Ω @ 430mA, 4.5V Package SOT-323 MOSFET Brand DIODES (Meitai) DMP2004WK-7 Series DMP2004WK
  • PDF DMP2004WK-7.pdf
Consultation
DMP3050LVT-7

DMP3050LVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3050LVT-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 4.5A Power (Pd) 1.8W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 4.5A Package SOT-26 MOSFET Brand DIODES (American) DMP3050LVT-7 Series DMP3050LVT
  • PDF DMP3050LVT-7.pdf
Consultation
DMP2075UFDB-7

DMP2075UFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2075UFDB-7
  • PackageU-DFN2020-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 3.8A, power (Pd) 700mW, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 75m Ω @ 2.9A, 4.5V package U-DFN2020-6 field-effect transistor (MOSFET) brand DIODES (American) DMP2075UFDB-7 series DMP2075UFDB
  • PDF DMP2075UFDB-7.pdf
Consultation
DMPH6023SK3Q-13

DMPH6023SK3Q-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMPH6023SK3Q-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 35A Power (Pd) 3.2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 33m Ω @ 10A, 10V Package TO-252 MOSFET Brand DIODES (American) DMPH6023SK3Q-13 Series DMPH6023SK3Q
  • PDF DMPH6023SK3Q-13.pdf
Consultation
DMTH8012LPSW-13

DMTH8012LPSW-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH8012LPSW-13
  • PackageDFN-8(4.9x5.8)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 80V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 53.7A Power (Pd) 3.1W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 17m Ω @ 10V, 12A Package DFN-8 (4.9x5.8) MOSFET Brand DIODES DMTH8012LPSW-13 Series DMTH8012LPSW
  • PDF DMTH8012LPSW-13.pdf
Consultation
DMN2016UTS-13

DMN2016UTS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2016UTS-13
  • PackageTSSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 8.58A Power (Pd) 880mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 14.5m Ω @ 4.5V, 9.4A Package TSSOP-8 MOSFET Brand DIODES (USA) DMN2016UTS-13 Series DMN2016UTS
  • PDF DMN2016UTS-13.pdf
Consultation
DMP2070UQ-7

DMP2070UQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2070UQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 4.6A Power (Pd) 830mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 44m Ω @ 2A, 4.5V Package SOT-23 MOSFET Brand DIODES (American) DMP2070UQ-7 Series DMP2070UQ
  • PDF DMP2070UQ-7.pdf
Consultation
DMP31D0U-7

DMP31D0U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP31D0U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.1V@250uA Current 530mA Power (Pd) 450mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 1 Ω @ 400mA, 4.5V Package SOT-23 MOSFET Brand DIODES DMP31D0U-7 Series DMP31D0U
  • PDF DMP31D0U-7.pdf
Consultation
ZXMP3A17E6TA

ZXMP3A17E6TA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP3A17E6TA
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 3.2A Power (Pd) 1.1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 70m Ω @ 10V, 3.2A Package SOT-23-6 MOSFET Brand DIODES (Meitai) ZXMP3A17E6TA Series ZXMP3A17E6TA
  • PDF ZXMP3A17E6TA.pdf
Consultation
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