About Us Contact Us 1986587488919865874889
Language
One stop service platform for electronic components
STM32F405RGT6 STM32F103C8T6 STM32F103RCT6 STM32F103RBT6 ICM-42688-P
BOMBOM
All Products
Home Manufacturer Products BOM Blog Solution About Us Contact Us
Home > Manufacturer > DIODES(美台)
DIODES(美台)

DIODES(美台)

ZVP2110A

ZVP2110A-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVP2110A
  • PackageTO-92L-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 230mA Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 8 Ω @ 10V, 375mA Package TO-92L-3 MOSFET Brand DIODES (Meitai) ZVP2110A Series ZVP2110A
  • PDF ZVP2110A.pdf
Consultation
DMN601DMK-7

DMN601DMK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN601DMK-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@1mA Current 510mA, power (Pd) 700mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 2.4 Ω @ 10V, 200mA package SOT-23-6 MOSFET brand DIODES (American) DMN601DMK-7 series DMN601DMK
  • PDF DMN601DMK-7.pdf
Consultation
DMN30H4D0L-13

DMN30H4D0L-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN30H4D0L-13
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 300V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 250mA Power (Pd) 310mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 4 Ω @ 300mA, 10V Package SOT-23-3 MOSFET Brand DIODES (Meitai) DMN30H4D0L-13 Series DMN30H4D0L
  • PDF DMN30H4D0L-13.pdf
Consultation
ZVN3310A

ZVN3310A-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN3310A
  • PackageTO-92-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2.4V@1mA Current 200mA Power (Pd) 625mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 500mA, 10V Package TO-92-3 MOSFET Brand DIODES (Meitai) ZVN3310A Series ZVN3310A
  • PDF ZVN3310A.pdf
Consultation
DMN2300U-7

DMN2300U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2300U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 1.24A Power (Pd) 430mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 175m Ω @ 4.5V, 300mA Package SOT-23 MOSFET Brand DIODES DMN2300U-7 Series DMN2300U
  • PDF DMN2300U-7.pdf
Consultation
BSS84DWQ-7

BSS84DWQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS84DWQ-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 130mA Power (Pd) 300mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 5V, 1mA Package SOT-363 MOSFET Brand DIODES (American) BSS84DWQ-7 Series BSS84DWQ
  • PDF BSS84DWQ-7.pdf
Consultation
DMN3730UFB4-7

DMN3730UFB4-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3730UFB4-7
  • PackageX2-DFN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 750mA Power (Pd) 470mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 460m Ω @ 4.5V, 200mA Package X2-DFN1006-3 MOSFET Brand DIODES DMN3730UFB4-7 Series DMN3730UFB4
  • PDF DMN3730UFB4-7.pdf
Consultation
DMP3056LSD-13

DMP3056LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3056LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 6.9A, power (Pd) 2.5W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 45m Ω @ 10V, 6A package SO-8 field-effect transistor (MOSFET) brand DIODES (American) DMP3056LSD-13 series DMP3056LSD
  • PDF DMP3056LSD-13.pdf
Consultation
DMG9926UDM-7

DMG9926UDM-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG9926UDM-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 980mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 28m Ω @ 4.5V, 8.2A Package SOT-23-6 MOSFET Brand DIODES DMG9926UDM-7 Series DMG9926UDM
  • PDF DMG9926UDM-7.pdf
Consultation
DMP2045UFY4-7

DMP2045UFY4-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2045UFY4-7
  • PackageX2-DFN2015-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4.7A Power (Pd) 670mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 45m Ω @ 4A, 4.5V Package X2-DFN2015-3 MOSFET Brand DIODES DMP2045UFY4-7 Series DMP2045UFY4
  • PDF DMP2045UFY4-7.pdf
Consultation
DMN53D0LDW-7

DMN53D0LDW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN53D0LDW-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 360mA, power (Pd) 310mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 1.6 Ω @ 10V, 500mA package SOT-363 MOSFET brand DIODES (Meitai) DMN53D0LDW-7 series DMN53D0LDW
  • PDF DMN53D0LDW-7.pdf
Consultation
DMG1013UWQ-7

DMG1013UWQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1013UWQ-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 820mA Power (Pd) 310mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 750m Ω @ 4.5V, 430mA Package SOT-323 MOSFET Brand DIODES (Meitai) DMG1013UWQ-7 Series DMG1013UWQ
  • PDF DMG1013UWQ-7.pdf
Consultation
DMN1029UFDB-7

DMN1029UFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN1029UFDB-7
  • PackageDFN-6(2x2)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5.6A Power (Pd) 1.4W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 29m Ω @ 5A, 4.5V Package DFN-6 (2x2) MOSFET Brand DIODES (American) DMN1029UFDB-7 Series DMN1029UFDB
  • PDF DMN1029UFDB-7.pdf
Consultation
ZXMN4A06GTA

ZXMN4A06GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN4A06GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5A Power (Pd) 2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 4.5A Package SOT-223 MOSFET Brand DIODES (USA) ZXMN4A06GTA Series ZXMN4A06GTA
  • PDF ZXMN4A06GTA.pdf
Consultation
DMP26M7UFG-7

DMP26M7UFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP26M7UFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 18A; 40A power (Pd) 2.3W channel P conduction resistance (RDS (on) @ Vgs, Id) 6.7m Ω @ 4.5V, 15A package PowerDI3333-8 MOSFET brand DIODES (American) DMP26M7UFG-7 series DMP26M7UFG
  • PDF DMP26M7UFG-7.pdf
Consultation
2N7002DWQ-7-F

2N7002DWQ-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002DWQ-7-F
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 230mA, power (Pd) 310mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 7.5 Ω @ 5V, 50mA package SOT-363 Field Effect Transistor (MOSFET) brand DIODES (Meitai) 2N7002DWQ-7-F series 2N7002DWQ
  • PDF 2N7002DWQ-7-F.pdf
Consultation
DMG3406L-7

DMG3406L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3406L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 3.6A Power (Pd) 770mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 3.6A Package SOT-23 MOSFET Brand DIODES (American) DMG3406L-7 Series DMG3406L
  • PDF DMG3406L-7.pdf
Consultation
DMTH4008LPSQ-13

DMTH4008LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH4008LPSQ-13
  • PackagePowerDI-5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 14.4A; 64.8A power (Pd) 2.99W; 55.5W channel N conduction resistance (RDS (on) @ Vgs, Id) 8.8m Ω @ 10A, 10V package PowerDI-5060-8 MOSFET brand DIODES (Meitai) DMTH4008LPSQ-13 series DMTH4008LPSQ
  • PDF DMTH4008LPSQ-13.pdf
Consultation
DMP3056LSS-13

DMP3056LSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3056LSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 7.1A Power (Pd) 2.5W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 45m Ω @ 10V, 6A Package SOP-8 MOSFET Brand DIODES (American) DMP3056LSS-13 Series DMP3056LSS
  • PDF DMP3056LSS-13.pdf
Consultation
DMN2005UFG-13

DMN2005UFG-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2005UFG-13
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 18.1A Power (Pd) 1.05W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 4.6m Ω @ 4.5V, 13.5A Package PowerDI3333-8 MOSFET Brand DIODES DMN2005UFG-13 Series DMN2005UFG
  • PDF DMN2005UFG-13.pdf
Consultation
共528记录«上一页1... 1112131415161718...27下一页»
Shenzhen Huaxin chuangyou electronics co., ltd