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Home > Manufacturer > DIODES(美台)
DIODES(美台)

DIODES(美台)

DMN2400UFB4-7

DMN2400UFB4-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2400UFB4-7
  • PackageX2-DFN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 750mA Power (Pd) 470mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 550m Ω @ 4.5V, 600mA Package X2-DFN1006-3 MOSFET Brand DIODES DMN2400UFB4-7 Series DMN2400UFB4
  • PDF DMN2400UFB4-7.pdf
Consultation
DMTH6016LFVWQ-7

DMTH6016LFVWQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH6016LFVWQ-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 41A Power (Pd) 1.17W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 16m Ω @ 20A, 10V Package PowerDI3333-8 MOSFET Brand DIODES (Meitai) DMTH6016LFVWQ-7 Series DMTH6016LFVWQ
  • PDF DMTH6016LFVWQ-7.pdf
Consultation
DMG3402LQ-7

DMG3402LQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3402LQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 4A Power (Pd) 1.4W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 52m Ω @ 4A, 10V Package SOT-23 MOSFET Brand DIODES (American) DMG3402LQ-7 Series DMG3402LQ
  • PDF DMG3402LQ-7.pdf
Consultation
DMN10H220LE-13

DMN10H220LE-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN10H220LE-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 2.3A Power (Pd) 1.8W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 220m Ω @ 10V, 1.6A Package SOT-223 MOSFET Brand DIODES DMN10H220LE-13 Series DMN10H220LE
  • PDF DMN10H220LE-13.pdf
Consultation
1N5819HW1-7-F

1N5819HW1-7-F-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • Model1N5819HW1-7-F
  • PackageSOD-123F
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 510mV@1A DC reverse withstand voltage (Vr) 40V average rectified current (Io) 1A reverse current (Ir) 500uA@40V Operating temperature -55 ° C~125 ° C Package SOD-123F Super Barrier Rectifier (SBR) Brand DIODES (Meitai) Model 1N5819HW1-7-F
  • PDF 1N5819HW1-7-F.pdf
Consultation
SBRT15U50SP5-13

SBRT15U50SP5-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBRT15U50SP5-13
  • PackagePowerDI-5
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 410mV@15A DC reverse withstand voltage (Vr) 50V average rectified current (Io) 15A reverse current (Ir) 170uA@50V Working temperature -65 ° C~150 ° C, packaged PowerDI-5 Super Barrier Rectifier (SBR) brand DIODES (Meitai) model SBRT15U50SP5-13
  • PDF SBRT15U50SP5-13.pdf
Consultation
SBRT5A50SA-13

SBRT5A50SA-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBRT5A50SA-13
  • PackageSMA(DO-214AC)
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 530mV@5A DC reverse withstand voltage (Vr) 50V average rectified current (Io) 5A reverse current (Ir) 150uA@50V Working temperature -55 ° C~150 ° C Package SMA (DO-214AC) Superbarrier Rectifier (SBR) Brand DIODES (Meitai) Model SBRT5A50SA-13
  • PDF SBRT5A50SA-13.pdf
Consultation
SBR8U60P5-13

SBR8U60P5-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR8U60P5-13
  • PackagePowerDI-5
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 460mV@8A DC reverse withstand voltage (Vr) 60V average rectified current (Io) 8A reverse current (Ir) 120uA@60V Working temperature -65 ° C~150 ° C, packaged PowerDI-5 Super Barrier Rectifier (SBR) brand DIODES (Meitai) model SBR8U60P5-13
  • PDF SBR8U60P5-13.pdf
Consultation
SBR3U40P1-7

SBR3U40P1-7-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR3U40P1-7
  • PackagePowerDI-123
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 420mV@3A DC reverse withstand voltage (Vr) 40V average rectified current (Io) 3A reverse current (Ir) 70uA@40V Working temperature -65 ° C~150 ° C, packaged PowerDI-123 Super Barrier Rectifier (SBR) brand DIODES (Meitai) model SBR3U40P1-7
  • PDF SBR3U40P1-7.pdf
Consultation
SBR3U30P1-7

SBR3U30P1-7-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR3U30P1-7
  • PackagePowerDI-123
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 390mV@3A DC reverse withstand voltage (Vr) 30V average rectified current (Io) 3A reverse current (Ir) 150uA@30V Working temperature -65 ° C~150 ° C, packaged PowerDI-123 Super Barrier Rectifier (SBR) brand DIODES (Meitai) model SBR3U30P1-7
  • PDF SBR3U30P1-7.pdf
Consultation
SBR8U60P5-7

SBR8U60P5-7-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR8U60P5-7
  • PackagePower-DI-5
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 460mV@8A DC reverse withstand voltage (Vr) 60V average rectified current (Io) 8A reverse current (Ir) 120uA@60V Working temperature -65 ° C~150 ° C Package Power-DI-5 Superbarrier Rectifier (SBR) Brand DIODES (Meitai) Model SBR8U60P5-7
  • PDF SBR8U60P5-7.pdf
Consultation
SBR10U45SP5-13

SBR10U45SP5-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR10U45SP5-13
  • PackagePowerDI-5
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 420mV@10A DC reverse withstand voltage (Vr) 45V average rectified current (Io) 10A reverse current (Ir) 50uA@45V Working temperature -65 ° C~150 ° C, packaged PowerDI-5 Super Barrier Rectifier (SBR) brand DIODES (Meitai) model SBR10U45SP5-13
  • PDF SBR10U45SP5-13.pdf
Consultation
SBR3A40SA-13

SBR3A40SA-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR3A40SA-13
  • PackageSMA(DO-214AC)
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 500mV@3A DC reverse withstand voltage (Vr) 40V average rectified current (Io) 3A reverse current (Ir) 400uA@40V Working temperature -65 ° C~150 ° C Package SMA (DO-214AC) Superbarrier Rectifier (SBR) Brand DIODES (Meitai) Model SBR3A40SA-13
  • PDF SBR3A40SA-13.pdf
Consultation
SBR0560S1-7

SBR0560S1-7-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR0560S1-7
  • PackageSOD-123
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 500mV@500mA DC reverse withstand voltage (Vr) 60V average rectified current (Io) 500mA reverse current (Ir) 100uA@60V Operating temperature -65 ° C~150 ° C Package SOD-123 Super Barrier Rectifier (SBR) Brand DIODES (Meitai) Model SBR0560S1-7
  • PDF SBR0560S1-7.pdf
Consultation
SBR10E45P5-13

SBR10E45P5-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR10E45P5-13
  • PackagePower-DI-5
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 420mV@10A DC reverse withstand voltage (Vr) 45V average rectified current (Io) 10A reverse current (Ir) 50uA@45V Working temperature -55 ° C~150 ° C Package Power-DI-5 Superbarrier Rectifier (SBR) Brand DIODES (Meitai) Model SBR10E45P5-13
  • PDF SBR10E45P5-13.pdf
Consultation
SBR1A40S1-7

SBR1A40S1-7-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR1A40S1-7
  • PackageSOD-123
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 520mV@1A DC reverse withstand voltage (Vr) 40V average rectified current (Io) 1A reverse current (Ir) 200uA@40V Operating temperature -65 ° C~150 ° C Package SOD-123 Super Barrier Rectifier (SBR) Brand DIODES (Meitai) Model SBR1A40S1-7
  • PDF SBR1A40S1-7.pdf
Consultation
SBR30A100CTB-13

SBR30A100CTB-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR30A100CTB-13
  • PackageTO-263-2
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 780mV@15A DC reverse withstand voltage (Vr) 100V average rectified current (Io) 15A reverse current (Ir) 100uA@100V Operating temperature -65 ° C~150 ° C, packaged TO-263-2 Super Barrier Rectifier (SBR) brand DIODES (Meitai) model SBR30A100CTB-13
  • PDF SBR30A100CTB-13.pdf
Consultation
SBR3U60P1Q-7

SBR3U60P1Q-7-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR3U60P1Q-7
  • PackagePower-DI-123
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 620mV@3A DC reverse withstand voltage (Vr) 60V average rectified current (Io) 3A reverse current (Ir) 100uA@60V Working temperature -65 ° C~150 ° C Package Power-DI-123 Superbarrier Rectifier (SBR) Brand DIODES (Meitai) Model SBR3U60P1Q-7
  • PDF SBR3U60P1Q-7.pdf
Consultation
SBR10U200P5-13

SBR10U200P5-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBR10U200P5-13
  • PackagePowerDI-5
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 830mV@10A DC reverse withstand voltage (Vr) 200V average rectified current (Io) 10A reverse current (Ir) 100uA@200V Working temperature -65 ° C~175 ° C Package PowerDI-5 Superbarrier Rectifier (SBR) Brand DIODES (Meitai) Model SBR10U200P5-13
  • PDF SBR10U200P5-13.pdf
Consultation
SBRT25U60SLP-13

SBRT25U60SLP-13-DIODES(美台)

  • TypeSuper Barrier Rectifier (SBR)
  • ModelSBRT25U60SLP-13
  • PackagePower-DI-5060-8
  • ManufacturerDIODES(美台)
  • DescriptionForward voltage drop (Vf) 550mV@25A DC reverse withstand voltage (Vr) 60V average rectified current (Io) 25A reverse current (Ir) 400uA@60V Working temperature -55 ° C~150 ° C Package Power-DI-5060-8 Super Barrier Rectifier (SBR) Brand DIODES (Meitai) Model SBRT25U60SLP-13
  • PDF SBRT25U60SLP-13.pdf
Consultation
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