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DIODES(美台)

DIODES(美台)

VN10LFTA

VN10LFTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelVN10LFTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@1mA Current 150mA Power (Pd) 330mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 500mA Package SOT-23 MOSFET Brand DIODES (American) VN10LFTA Series VN10LFTA
  • PDF VN10LFTA.pdf
Consultation
ZXMN10A08GTA

ZXMN10A08GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN10A08GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 2A Power (Pd) 2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 250m Ω @ 10V, 3.2A Package SOT-223 MOSFET Brand DIODES (USA) ZXMN10A08GTA Series ZXMN10A08GTA
  • PDF ZXMN10A08GTA.pdf
Consultation
DMP32D4S-13

DMP32D4S-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP32D4S-13
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.4V@250uA Current 300mA, power (Pd) 370mW, channel P conduction resistance (RDS (on) @ Vgs, Id) 2.4 Ω @ 10V, 300mA packaged SOT-23 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP32D4S-13 series DMP32D4S
  • PDF DMP32D4S-13.pdf
Consultation
DMP2305UQ-7

DMP2305UQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2305UQ-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 60m Ω @ 4.2A, 4.5V Package SOT-23-3 MOSFET Brand DIODES (American) DMP2305UQ-7 Series DMP2305UQ
  • PDF DMP2305UQ-7.pdf
Consultation
ZXMC10A816N8TC

ZXMC10A816N8TC-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMC10A816N8TC
  • PackageSOIC-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2.4V@250uA Current 2A Power (Pd) 1.8W Channel 1 N and 1 P Conduction Resistance (RDS (on) @ Vgs, Id) 230m Ω @ 10V, 1A Package SOIC-8 MOSFET Brand DIODES (US) ZXMC10A816N8TC Series ZXMC10A816N8TC
  • PDF ZXMC10A816N8TC.pdf
Consultation
DMN6075SQ-7

DMN6075SQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6075SQ-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2A Power (Pd) 800mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 85m Ω @ 3.2A, 10V Package SOT-23-3 MOSFET Brand DIODES DMN6075SQ-7 Series DMN6075SQ
  • PDF DMN6075SQ-7.pdf
Consultation
DMT6005LPS-13

DMT6005LPS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT6005LPS-13
  • PackageDFN-8(5.1x6)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) - current 100A power (Pd) 2.6W channel N conduction resistance (RDS (on) @ Vgs, Id) 6.5m Ω @ VGS=4.5V package DFN-8 (5.1x6) MOSFET brand DIODES (American) DMT6005LPS-13 series DMT6005LPS
  • PDF DMT6005LPS-13.pdf
Consultation
ZXMN7A11GTA

ZXMN7A11GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN7A11GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 70V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.7A Power (Pd) 2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 130m Ω @ 10V, 4.4A Package SOT-223 MOSFET Brand DIODES (USA) ZXMN7A11GTA Series ZXMN7A11GTA
  • PDF ZXMN7A11GTA.pdf
Consultation
DMN2004DMK-7

DMN2004DMK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2004DMK-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 540mA, power (Pd) 225mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 550m Ω @ 540mA, 4.5V package SOT-26 field-effect transistor (MOSFET) brand DIODES (American) DMN2004DMK-7 series DMN2004DMK
  • PDF DMN2004DMK-7.pdf
Consultation
DMP31D7L-13

DMP31D7L-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP31D7L-13
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.6V@250uA Current 580mA Power (Pd) 430mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 900m Ω Package SOT-23 MOSFET Brand DIODES (Meitai) DMP31D7L-13 Series DMP31D7L
  • PDF DMP31D7L-13.pdf
Consultation
ZXMN3A01FTA

ZXMN3A01FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN3A01FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.8A Power (Pd) 625mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 120m Ω @ 10V, 2.5A Package SOT-23 MOSFET Brand DIODES (USA) ZXMN3A01FTA Series ZXMN3A01FTA
  • PDF ZXMN3A01FTA.pdf
Consultation
DMN3018SSD-13

DMN3018SSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3018SSD-13
  • PackageSOIC-8
  • ManufacturerDIODES(美台)
  • DescriptionManufacturer DIODES (Taiwan) Product Classification MOSFET Series DMN3018SSD Installation Type SMT Package/Housing SOIC-8 Threshold Voltage (Vgs (th) @ Id) 2.1V@250uA Current 6.7A Power (Pd) 1.5W Withstand voltage 30V Conduction resistance (RDS (on) @ Vgs, Id) 22m Ω @ 10V, 10A channel 2 N
  • PDF DMN3018SSD-13.pdf
Consultation
DMHC4035LSDQ-13

DMHC4035LSDQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMHC4035LSDQ-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 4.5A; 3.7A power (Pd) 1.5W channel with 2 N and 2 P conducting resistors (RDS (on) @ Vgs, Id) 45m Ω @ 3.9A, 10V; 65m Ω @ 4.2A, 10V package SO-8 MOSFET brand DIODES (Meitai) DMHC4035LSDQ-13 series DMHC4035LSDQ
  • PDF DMHC4035LSDQ-13.pdf
Consultation
DMTH6005LK3Q-13

DMTH6005LK3Q-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH6005LK3Q-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 90A, power (Pd) 2.1W; 100W channel N conduction resistance (RDS (on) @ Vgs, Id) 5.6m Ω @ 10V, 50A package TO-252 field-effect transistor (MOSFET) brand DIODES (Meitai) DMTH6005LK3Q-13 series DMTH6005LK3Q
  • PDF DMTH6005LK3Q-13.pdf
Consultation
DMC3028LSD-13

DMC3028LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC3028LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 6.6A; 6.8A power (Pd) 1.8W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 28m Ω @ 6A, 10V package SO-8 field-effect transistor (MOSFET) brand DIODES (American) DMC3028LSD-13 series DMC3028LSD
  • PDF DMC3028LSD-13.pdf
Consultation
DMG4496SSS-13

DMG4496SSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG4496SSS-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 10A power (Pd) 1.42W channel N conduction resistance (RDS (on) @ Vgs, Id) 21.5m Ω @ 10V, 10A package SO-8 field-effect transistor (MOSFET) brand DIODES (Meitai) DMG4496SSS-13 series DMG4496SSS
  • PDF DMG4496SSS-13.pdf
Consultation
DMT69M8LFV-7

DMT69M8LFV-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT69M8LFV-7
  • PackagePDFN-8(3.3x3.3)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) - current 36A; 45A power (Pd) 2.2W channel N conduction resistance (RDS (on) @ Vgs, Id) 9.5m Ω @ VGS=10V 13.3m Ω @ VGS=4.5V package PDFN-8 (3.3x3.3) MOSFET brand DIODES (USA) DMT69M8LFV-7 series DMT69M8LFV
  • PDF DMT69M8LFV-7.pdf
Consultation
BSS138DWQ-7

BSS138DWQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS138DWQ-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 200mA, power (Pd) 200mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 3.5 Ω @ 220mA, 10V package SOT-363 MOSFET brand DIODES (American) BSS138DWQ-7 series BSS138DWQ
  • PDF BSS138DWQ-7.pdf
Consultation
DMP3085LSS-13

DMP3085LSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3085LSS-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 3.8A Power (Pd) 1.3W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 70m Ω @ 5.3A, 10V Package SO-8 MOSFET Brand DIODES DMP3085LSS-13 Series DMP3085LSS
  • PDF DMP3085LSS-13.pdf
Consultation
DMP10H400SEQ-13

DMP10H400SEQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP10H400SEQ-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2.3A; 6A power (Pd) 2W; 13.7W channel P conduction resistance (RDS (on) @ Vgs, Id) 250m Ω @ 5A, 10V package SOT-223 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP10H400SEQ-13 series DMP10H400SEQ
  • PDF DMP10H400SEQ-13.pdf
Consultation
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