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DIODES(美台)

DIODES(美台)

ZVP3306FTA

ZVP3306FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVP3306FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 90mA Power (Pd) 330mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 14 Ω @ 10V, 200mA Package SOT-23 MOSFET Brand DIODES (USA) ZVP3306FTA Series ZVP3306FTA
  • PDF ZVP3306FTA.pdf
Consultation
DMP3028LSD-13

DMP3028LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3028LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 6A, power (Pd) 1.3W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 7A package SO-8 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP3028LSD-13 series DMP3028LSD
  • PDF DMP3028LSD-13.pdf
Consultation
DMN3016lSS-13

DMN3016lSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3016lSS-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 10.3A Power (Pd) 1.5W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 12m Ω @ 10V, 12A Package SO-8 MOSFET Brand DIODES (American) DMN3016lSS-13 Series DMN3016lSS
  • PDF DMN3016lSS-13.pdf
Consultation
DMG3414UQ-7

DMG3414UQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3414UQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 780mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 4.5V, 8.2A Package SOT-23 MOSFET Brand DIODES (Meitai) DMG3414UQ-7 Series DMG3414UQ
  • PDF DMG3414UQ-7.pdf
Consultation
DMN3404LQ-7

DMN3404LQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3404LQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 5.8A Power (Pd) 720mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 28m Ω @ 5.8A, 10V Package SOT-23 MOSFET Brand DIODES DMN3404LQ-7 Series DMN3404LQ
  • PDF DMN3404LQ-7.pdf
Consultation
DMP3028LFDE-7

DMP3028LFDE-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3028LFDE-7
  • PackageUDFN2020-6-EP
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.4V@250uA Current 6.8A Power (Pd) 660mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 32m Ω @ 10V, 7A Package UDFN2020-6-EP MOSFET Brand DIODES (American) DMP3028LFDE-7 Series DMP3028LFDE
  • PDF DMP3028LFDE-7.pdf
Consultation
DMP1009UFDF-7

DMP1009UFDF-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP1009UFDF-7
  • PackageUDFN2020-6-EP
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 15A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 11m Ω @ 4.5V, 5A Package UDFN2020-6-EP MOSFET Brand DIODES DMP1009UFDF-7 Series DMP1009UFDF
  • PDF DMP1009UFDF-7.pdf
Consultation
DMT6009LFG-7

DMT6009LFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT6009LFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 11A; 34A power (Pd) 2.08W; 19.2W channel N conduction resistance (RDS (on) @ Vgs, Id) 10m Ω @ 10V, 13.5A package PowerDI3333-8 MOSFET brand DIODES (Meitai) DMT6009LFG-7 series DMT6009LFG
  • PDF DMT6009LFG-7.pdf
Consultation
DMT10H010LK3-13

DMT10H010LK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT10H010LK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 68.8A Power (Pd) 3W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 8.8m Ω @ 10V, 13A Package TO-252 MOSFET Brand DIODES (Meitai) DMT10H010LK3-13 Series DMT10H010LK3
  • PDF DMT10H010LK3-13.pdf
Consultation
DMP6350SQ-7

DMP6350SQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6350SQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 1.5A Power (Pd) 720mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 350m Ω @ 900mA, 10V Package SOT-23 MOSFET Brand DIODES DMP6350SQ-7 Series DMP6350SQ
  • PDF DMP6350SQ-7.pdf
Consultation
DMP2104LP-7

DMP2104LP-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2104LP-7
  • PackageX1-DFN1411-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.5A Power (Pd) 500mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 150m Ω @ 4.5V, 900mA Package X1-DFN1411-3 MOSFET Brand DIODES DMP2104LP-7 Series DMP2104LP
  • PDF DMP2104LP-7.pdf
Consultation
DMN62D1SFB-7B

DMN62D1SFB-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN62D1SFB-7B
  • PackageX1-DFN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.3V@250uA Current 410mA Power (Pd) 470mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1.4 Ω @ 40mA, 10V Package X1-DFN1006-3 MOSFET Brand DIODES DMN62D1SFB-7B Series DMN62D1SFB
  • PDF DMN62D1SFB-7B.pdf
Consultation
ZXMP10A17GTA

ZXMP10A17GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP10A17GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 1.7A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 350m Ω @ 10V, 2.4A Package SOT-223 MOSFET Brand DIODES (USA) ZXMP10A17GTA Series ZXMP10A17GTA
  • PDF ZXMP10A17GTA.pdf
Consultation
DMC4040SSD-13

DMC4040SSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC4040SSD-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 1.8V@250uA Current 6.8A Power (Pd) 1.8W Channel 1 N and 1 P Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 3A Package SOP-8 MOSFET Brand DIODES DMC4040SSD-13 Series DMC4040SSD
  • PDF DMC4040SSD-13.pdf
Consultation
ZVN4424GTA

ZVN4424GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN4424GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionManufacturer DIODES (Taiwan) Product Classification MOSFET Series ZVN4424GTA Installation Type SMT Package/Housing SOT-223 Threshold Voltage (Vgs (th) @ Id) 1.8V@1mA Current 500mA power (Pd) 2.5W withstand voltage 240V conduction resistance (RDS (on) @ Vgs, Id) 5.5 Ω @ 10V, 500mA channel N
  • PDF ZVN4424GTA.pdf
Consultation
DMN2990UFA-7B

DMN2990UFA-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2990UFA-7B
  • PackageXFDFN-3(0.6x0.8)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 510mA Power (Pd) 400mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 990m Ω @ 4.5V, 100mA Package XFDFN-3 (0.6x0.8) MOSFET Brand DIODES DMN2990UFA-7B Series DMN2990UFA
  • PDF DMN2990UFA-7B.pdf
Consultation
DMP2004VK-7

DMP2004VK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2004VK-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 530mA, power (Pd) 400mW, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 900m Ω @ 4.5V, 430mA package SOT-563 MOSFET brand DIODES (American) DMP2004VK-7 series DMP2004VK
  • PDF DMP2004VK-7.pdf
Consultation
DMP2130L-7

DMP2130L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2130L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.25V@250uA Current 3A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 51m Ω @ 4.5V, 3.5A Package SOT-23 MOSFET Brand DIODES DMP2130L-7 Series DMP2130L
  • PDF DMP2130L-7.pdf
Consultation
DMT6010LFG-7

DMT6010LFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT6010LFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 13A; 30A power (Pd) 2.2W; 41W channel N conduction resistance (RDS (on) @ Vgs, Id) 7.5m Ω @ 10V, 20A package PowerDI3333-8 MOSFET brand DIODES (Meitai) DMT6010LFG-7 series DMT6010LFG
  • PDF DMT6010LFG-7.pdf
Consultation
DMP3130L-7

DMP3130L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3130L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.3V@250uA Current 3.5A Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 77m Ω @ 10V, 4.2A Package SOT-23 MOSFET Brand DIODES DMP3130L-7 Series DMP3130L
  • PDF DMP3130L-7.pdf
Consultation
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