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DIODES(美台)

DIODES(美台)

DMN3032LFDB-7

DMN3032LFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3032LFDB-7
  • PackageDMN3032LFDB-7
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 6.2A Power (Pd) 1W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 30m Ω @ 10V, 5.8A Package DMN3032LFDB-7 Field Effect Transistor (MOSFET) Brand DIODES (American) DMN3032LFDB-7 Series DMN3032LFDB
  • PDF DMN3032LFDB-7.pdf
Consultation
ZXMN6A08E6TA

ZXMN6A08E6TA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN6A08E6TA
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.8A Power (Pd) 1.1W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 80m Ω @ 10V, 4.8A Package SOT-23-6 MOSFET Brand DIODES (Meitai) ZXMN6A08E6TA Series ZXMN6A08E6TA
  • PDF ZXMN6A08E6TA.pdf
Consultation
DMPH4013SK3-13

DMPH4013SK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMPH4013SK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 55A Power (Pd) 2.1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 15m Ω @ 10A, 10V Package TO-252 MOSFET Brand DIODES (American) DMPH4013SK3-13 Series DMPH4013SK3
  • PDF DMPH4013SK3-13.pdf
Consultation
DMPH6050SSDQ-13

DMPH6050SSDQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMPH6050SSDQ-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 5.2A, power (Pd), 2W channels, 2 P-conducting resistors (RDS (on) @ Vgs, Id), 48m Ω @ 5A, 10V package SO-8 field-effect transistor (MOSFET) brand DIODES (American) DMPH6050SSDQ-13 series DMPH6050SSDQ
  • PDF DMPH6050SSDQ-13.pdf
Consultation
DMN2053U-7

DMN2053U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2053U-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 6.5A Power (Pd) 800mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 29m Ω @ 10V, 6A Package SOT-23-3 MOSFET Brand DIODES (USA) DMN2053U-7 Series DMN2053U
  • PDF DMN2053U-7.pdf
Consultation
ZVN4206A

ZVN4206A-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN4206A
  • PackageTO-92-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@1mA Current 600mA Power (Pd) 700mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1 Ω @ 10V, 1.5A Package TO-92-3 MOSFET Brand DIODES (Meitai) ZVN4206A Series ZVN4206A
  • PDF ZVN4206A.pdf
Consultation
DMN2004WKQ-7

DMN2004WKQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2004WKQ-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 540mA Power (Pd) 200mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 550m Ω @ 540mA, 4.5V Package SOT-323 MOSFET Brand DIODES DMN2004WKQ-7 Series DMN2004WKQ
  • PDF DMN2004WKQ-7.pdf
Consultation
DMP45H150DHE-13

DMP45H150DHE-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP45H150DHE-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 450V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 250mA Power (Pd) 13.9W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 150 Ω @ 50mA, 10V Package SOT-223 MOSFET Brand DIODES DMP45H150DHE-13 Series DMP45H150DHE
  • PDF DMP45H150DHE-13.pdf
Consultation
ZXMN6A11ZTA

ZXMN6A11ZTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN6A11ZTA
  • PackageSOT-89-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.7A Power (Pd) 1.5W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 120m Ω @ 10V, 2.5A Package SOT-89-3 MOSFET Brand DIODES (Meitai) ZXMN6A11ZTA Series ZXMN6A11ZTA
  • PDF ZXMN6A11ZTA.pdf
Consultation
DMN53D0LW-7

DMN53D0LW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN53D0LW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@100uA Current 360mA Power (Pd) 320mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 10V, 270mA Package SOT-323 MOSFET Brand DIODES (Meitai) DMN53D0LW-7 Series DMN53D0LW
  • PDF DMN53D0LW-7.pdf
Consultation
DMN2024U-7

DMN2024U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2024U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 6.8A Power (Pd) 800mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 6.5A, 4.5V Package SOT-23 MOSFET Brand DIODES (American) DMN2024U-7 Series DMN2024U
  • PDF DMN2024U-7.pdf
Consultation
DMN10H700S-7

DMN10H700S-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN10H700S-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 700mA Power (Pd) 400mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 700m Ω @ 1.5A, 10V Package SOT-23-3 MOSFET Brand DIODES DMN10H700S-7 Series DMN10H700S
  • PDF DMN10H700S-7.pdf
Consultation
DMP6250SE-13

DMP6250SE-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6250SE-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2.1A, power (Pd) 1.8W; 14W channel P conduction resistance (RDS (on) @ Vgs, Id) 250m Ω @ 10V, 1A package SOT-223 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP6250SE-13 series DMP6250SE
  • PDF DMP6250SE-13.pdf
Consultation
DMT10H015LSS-13

DMT10H015LSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT10H015LSS-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3.5V@250uA Current 8.3A Power (Pd) 1.2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 16m Ω @ 10V, 20A Package SO-8 MOSFET Brand DIODES (Meitai) DMT10H015LSS-13 Series DMT10H015LSS
  • PDF DMT10H015LSS-13.pdf
Consultation
DMP3098LSS-13

DMP3098LSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3098LSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 5.3A Power (Pd) 2.5W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 65m Ω @ 10V, 5.3A Package SOP-8 MOSFET Brand DIODES (American) DMP3098LSS-13 Series DMP3098LSS
  • PDF DMP3098LSS-13.pdf
Consultation
DMN3731UFB4-7B

DMN3731UFB4-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3731UFB4-7B
  • PackageX2-DFN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 1.2A Power (Pd) 520mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 460m Ω @ 200mA, 4.5V Package X2-DFN1006-3 MOSFET Brand DIODES DMN3731UFB4-7B Series DMN3731UFB4
  • PDF DMN3731UFB4-7B.pdf
Consultation
DMTH4007LPSQ-13

DMTH4007LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH4007LPSQ-13
  • PackagePowerDI5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 15.5A; 100A power (Pd) 150W; 2.7W channel N conduction resistance (RDS (on) @ Vgs, Id) 2 Ω @ 4V, 100mA package PowerDI5060-8 MOSFET brand DIODES (Meitai) DMTH4007LPSQ-13 series DMTH4007LPSQ
  • PDF DMTH4007LPSQ-13.pdf
Consultation
DMN62D0LFD-7

DMN62D0LFD-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN62D0LFD-7
  • PackageX1-DFN1212-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 310mA Power (Pd) 480mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 4V, 100mA Package X1-DFN1212-3 MOSFET Brand DIODES DMN62D0LFD-7 Series DMN62D0LFD
  • PDF DMN62D0LFD-7.pdf
Consultation
DMTH8012LPSQ-13

DMTH8012LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH8012LPSQ-13
  • PackageTDFN-8-Power
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 80V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 72A; 10A power (Pd) 136W; 2.6W channel N conduction resistance (RDS (on) @ Vgs, Id) 17m Ω @ 12A, 10V package TDFN-8-Power MOSFET brand DIODES (Meitai) DMTH8012LPSQ-13 series DMTH8012LPSQ
  • PDF DMTH8012LPSQ-13.pdf
Consultation
DMC3021LSD-13

DMC3021LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC3021LSD-13
  • PackageSOIC-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 8.5A; 7A power (Pd) 2.5W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 21m Ω @ 7A, 10V package SOIC-8 field-effect transistor (MOSFET) brand DIODES (American) DMC3021LSD-13 series DMC3021LSD
  • PDF DMC3021LSD-13.pdf
Consultation
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