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DIODES(美台)

DIODES(美台)

DMP6110SFDF-7

DMP6110SFDF-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6110SFDF-7
  • PackageDFN2020-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 4.2A Power (Pd) 1.97W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 110m Ω @ 4.5A, 10V Package DFN2020-6 MOSFET Brand DIODES DMP6110SFDF-7 Series DMP6110SFDF
  • PDF DMP6110SFDF-7.pdf
Consultation
ZXM61P02FTA

ZXM61P02FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXM61P02FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 900mA Power (Pd) 625mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 600m Ω @ 4.5V, 610mA Package SOT-23 MOSFET Brand DIODES (USA) ZXM61P02FTA Series ZXM61P02FTA
  • PDF ZXM61P02FTA.pdf
Consultation
ZXMP3A16GTA

ZXMP3A16GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP3A16GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5.4A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 45m Ω @ 10V, 4.2A Package SOT-223 MOSFET Brand DIODES (USA) ZXMP3A16GTA Series ZXMP3A16GTA
  • PDF ZXMP3A16GTA.pdf
Consultation
DMP2215L-7

DMP2215L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2215L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.25V@250uA Current 2.7A Power (Pd) 1.08W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 100m Ω @ 4.5V, 2.7A Package SOT-23 MOSFET Brand DIODES (American) DMP2215L-7 Series DMP2215L
  • PDF DMP2215L-7.pdf
Consultation
DMG6402LVT-7

DMG6402LVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6402LVT-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 6A Power (Pd) 1.75W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 30m Ω @ 10V, 7A Package SOT-26 MOSFET Brand DIODES (American) DMG6402LVT-7 Series DMG6402LVT
  • PDF DMG6402LVT-7.pdf
Consultation
DMG4822SSD-13

DMG4822SSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG4822SSD-13
  • PackageSOIC-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 10A Power (Pd) 1.42W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 20m Ω @ 10V, 8.5A Package SOIC-8 Field Effect Transistor (MOSFET) Brand DIODES (American) DMG4822SSD-13 Series DMG4822SSD
  • PDF DMG4822SSD-13.pdf
Consultation
DMN6040SK3-13

DMN6040SK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6040SK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 20A Power (Pd) 42W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 40m Ω @ 10V, 20A Package TO-252 MOSFET Brand DIODES (American) DMN6040SK3-13 Series DMN6040SK3
  • PDF DMN6040SK3-13.pdf
Consultation
DMN6040SVT-7

DMN6040SVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6040SVT-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 5A Power (Pd) 1.2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 44m Ω @ 10V, 4.3A Package SOT-26 MOSFET Brand DIODES DMN6040SVT-7 Series DMN6040SVT
  • PDF DMN6040SVT-7.pdf
Consultation
DMN2990UDJ-7

DMN2990UDJ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2990UDJ-7
  • PackageSOT-963
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 450mA, power (Pd) 350mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 990m Ω @ 4.5V, 100mA package SOT-963 MOSFET brand DIODES (American) DMN2990UDJ-7 series DMN2990UDJ
  • PDF DMN2990UDJ-7.pdf
Consultation
DMP4015SSSQ-13

DMP4015SSSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4015SSSQ-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 9.1A Power (Pd) 1.45W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 11m Ω @ 9.8A, 10V Package SO-8 MOSFET Brand DIODES (Meitai) DMP4015SSSQ-13 Series DMP4015SSSQ
  • PDF DMP4015SSSQ-13.pdf
Consultation
ZXMN10A07ZTA

ZXMN10A07ZTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN10A07ZTA
  • PackageSOT-89
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 1A Power (Pd) 1.5W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 700m Ω @ 10V, 1.5A Package SOT-89 MOSFET Brand DIODES (USA) ZXMN10A07ZTA Series ZXMN10A07ZTA
  • PDF ZXMN10A07ZTA.pdf
Consultation
DMT3020LFDB-7

DMT3020LFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT3020LFDB-7
  • PackageU-DFN2020-6B
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 7.7A Power (Pd) 700mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 20m Ω @ 10V, 9A Package U-DFN2020-6B MOSFET Brand DIODES (American) DMT3020LFDB-7 Series DMT3020LFDB
  • PDF DMT3020LFDB-7.pdf
Consultation
DMC1229UFDB-7

DMC1229UFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC1229UFDB-7
  • PackageU-DFN2020-6B
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5.6A; 3.8A power (Pd) 1.4W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 17m Ω @ 4.5V, 5A; 37m Ω @ 4.5V, 3.6A package U-DFN2020-6B MOSFET brand DIODES (Meitai) DMC1229UFDB-7 series DMC1229UFDB
  • PDF DMC1229UFDB-7.pdf
Consultation
DMG6968UQ-7

DMG6968UQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6968UQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 6.5A Power (Pd) 1.3W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 4.5V, 6.5A Package SOT-23 MOSFET Brand DIODES (American) DMG6968UQ-7 Series DMG6968UQ
  • PDF DMG6968UQ-7.pdf
Consultation
DMP1045UFY4-7

DMP1045UFY4-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP1045UFY4-7
  • PackageX2-DFN2015-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5.5A Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 32m Ω @ 4.5V, 4A Package X2-DFN2015-3 MOSFET Brand DIODES DMP1045UFY4-7 Series DMP1045UFY4
  • PDF DMP1045UFY4-7.pdf
Consultation
DMG1016UDW-7

DMG1016UDW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1016UDW-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.07A; 845mA power (Pd) 330mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 450m Ω @ 600mA, 4.5V package SOT-363 MOSFET brand DIODES (American) DMG1016UDW-7 series DMG1016UDW
  • PDF DMG1016UDW-7.pdf
Consultation
DMC3025LSD-13

DMC3025LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC3025LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 6.5A; 4.2A power (Pd) 1.2W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 20m Ω @ 7.4A, 10V package SO-8 field-effect transistor (MOSFET) brand DIODES (American) DMC3025LSD-13 series DMC3025LSD
  • PDF DMC3025LSD-13.pdf
Consultation
DMN3731U-7

DMN3731U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3731U-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 900mA Power (Pd) 400mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 460m Ω @ 200mA, 4.5V Package SOT-23-3 MOSFET Brand DIODES DMN3731U-7 Series DMN3731U
  • PDF DMN3731U-7.pdf
Consultation
DMG6968UDM-7

DMG6968UDM-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6968UDM-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 6.5A Power (Pd) 850mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 24m Ω @ 4.5V, 6.5A Package SOT-23-6 MOSFET Brand DIODES (US) DMG6968UDM-7 Series DMG6968UDM
  • PDF DMG6968UDM-7.pdf
Consultation
DMTH43M8LPSQ-13

DMTH43M8LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH43M8LPSQ-13
  • PackagePower-DI-5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 22A; 100A power (Pd) 2.7W channel N conduction resistance (RDS (on) @ Vgs, Id) 3.3m Ω @ 20A, 10V package Power-DI-5060-8 MOSFET brand DIODES (American) DMTH43M8LPSQ-13 series DMTH43M8LPSQ
  • PDF DMTH43M8LPSQ-13.pdf
Consultation
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