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DIODES(美台)

DIODES(美台)

DMP3085LSD-13

DMP3085LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3085LSD-13
  • PackageSOIC-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 3.9A, power (Pd) 1.1W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 70m Ω @ 10V, 5.3A package SOIC-8 field-effect transistor (MOSFET) brand DIODES (American) DMP3085LSD-13 series DMP3085LSD
  • PDF DMP3085LSD-13.pdf
Consultation
DMN3032LFDBQ-7

DMN3032LFDBQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3032LFDBQ-7
  • PackageDFN2020-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 6.2A Power (Pd) 1W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 30m Ω @ 5.8A, 10V Package DFN2020-6 MOSFET Brand DIODES (Meitai) DMN3032LFDBQ-7 Series DMN3032LFDBQ
  • PDF DMN3032LFDBQ-7.pdf
Consultation
DMP3098LSD-13

DMP3098LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3098LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 4.4A, power (Pd) 1.8W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 65m Ω @ 5A, 10V package SO-8 field-effect transistor (MOSFET) brand DIODES (American) DMP3098LSD-13 series DMP3098LSD
  • PDF DMP3098LSD-13.pdf
Consultation
DMN3016LFDE-7

DMN3016LFDE-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3016LFDE-7
  • PackageUDFN2020-6-EP
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 10A Power (Pd) 730mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 12m Ω @ 10V, 11A Package UDFN2020-6-EP MOSFET Brand DIODES (American) DMN3016LFDE-7 Series DMN3016LFDE
  • PDF DMN3016LFDE-7.pdf
Consultation
DMN3135LVT-7

DMN3135LVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3135LVT-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.2V@250uA Current 3.5A Power (Pd) 840mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 60m Ω @ 10V, 3.1A Package SOT-26 MOSFET Brand DIODES (American) DMN3135LVT-7 Series DMN3135LVT
  • PDF DMN3135LVT-7.pdf
Consultation
DMTH6010LPDQ-13

DMTH6010LPDQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH6010LPDQ-13
  • PackageTDFN-8-Power
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 13.1A; 47.6A power (Pd) 2.8W channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 11m Ω @ 20A, 10V package TDFN-8-Power MOSFET brand DIODES (American) DMTH6010LPDQ-13 series DMTH6010LPDQ
  • PDF DMTH6010LPDQ-13.pdf
Consultation
DMN2310U-7

DMN2310U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2310U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 1.6A Power (Pd) 480mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 175m Ω @ 300mA, 4.5V Package SOT-23 MOSFET Brand DIODES (American) DMN2310U-7 Series DMN2310U
  • PDF DMN2310U-7.pdf
Consultation
DMN3020UFDF-7

DMN3020UFDF-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3020UFDF-7
  • PackageDFN2020-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 15A Power (Pd) 2.03W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 19m Ω @ 4.5A, 4.5V Package DFN2020-6 MOSFET Brand DIODES (American) DMN3020UFDF-7 Series DMN3020UFDF
  • PDF DMN3020UFDF-7.pdf
Consultation
DMN3018SSS-13

DMN3018SSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3018SSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 7.3A Power (Pd) 1.4W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 21m Ω @ 10V, 10A Package SOP-8 Field Effect Transistor (MOSFET) Brand DIODES DMN3018SSS-13 Series DMN3018SSS
  • PDF DMN3018SSS-13.pdf
Consultation
ZXMP3A13FTA

ZXMP3A13FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP3A13FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.4A Power (Pd) 625mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 210m Ω @ 10V, 1.4A Package SOT-23 MOSFET Brand DIODES (USA) ZXMP3A13FTA Series ZXMP3A13FTA
  • PDF ZXMP3A13FTA.pdf
Consultation
BSS84Q-7-F

BSS84Q-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS84Q-7-F
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 130mA Power (Pd) 300mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 10V, 12.6A Package SOT-23 MOSFET Brand DIODES (American) BSS84Q-7-F Series BSS84Q
  • PDF BSS84Q-7-F.pdf
Consultation
DMG7430LFG-7

DMG7430LFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG7430LFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 10.5A Power (Pd) 900mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 11m Ω @ 10V, 20A Package PowerDI3333-8 MOSFET Brand DIODES (Meitai) DMG7430LFG-7 Series DMG7430LFG
  • PDF DMG7430LFG-7.pdf
Consultation
ZXMP10A18KTC

ZXMP10A18KTC-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP10A18KTC
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 3.8A Power (Pd) 2.17W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 150m Ω @ 10V, 2.8A Package TO-252 MOSFET Brand DIODES (USA) ZXMP10A18KTC Series ZXMP10A18KTC
  • PDF ZXMP10A18KTC.pdf
Consultation
DMN3051L-7

DMN3051L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3051L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.2V@250uA Current 5.8A Power (Pd) 700mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 38m Ω @ 10V, 5.8A Package SOT-23 MOSFET Brand DIODES (American) DMN3051L-7 Series DMN3051L
  • PDF DMN3051L-7.pdf
Consultation
DMN3009LFVW-7

DMN3009LFVW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3009LFVW-7
  • PackagePDFN-8(3.1x3.1)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 60A Power (Pd) 1W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 30A Package PDFN-8 (3.1x3.1) MOSFET Brand DIODES DMN3009LFVW-7 Series DMN3009LFVW
  • PDF DMN3009LFVW-7.pdf
Consultation
ZXMS6004FFQTA

ZXMS6004FFQTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMS6004FFQTA
  • PackageSOT-23F
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60 V threshold voltage (Vgs (th) @ Id) - current 1.3 A power (Pd) 1.5 W channel N conduction resistance (RDS (on) @ Vgs, Id) 500 mOhms package SOT-23F field-effect transistor (MOSFET) brand DIODES (USA) ZXMS6004FFQTA series ZXMS6004FFQTA
  • PDF ZXMS6004FFQTA.pdf
Consultation
DMP1045UQ-7

DMP1045UQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP1045UQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4A Power (Pd) 800mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 31m Ω @ 4A, 4.5V Package SOT-23 MOSFET Brand DIODES DMP1045UQ-7 Series DMP1045UQ
  • PDF DMP1045UQ-7.pdf
Consultation
DMC1030UFDB-7

DMC1030UFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC1030UFDB-7
  • PackageU-DFN2020-6D
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5.1A; 3.9A power (Pd) 1.36W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 17m Ω @ 4.5V, 4.6A; 37m Ω @ 4.5V, 3.6A package U-DFN2020-6D MOSFET brand DIODES (Meitai) DMC1030UFDB-7 series DMC1030UFDB
  • PDF DMC1030UFDB-7.pdf
Consultation
DMC3400SDW-7

DMC3400SDW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC3400SDW-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.6V@250uA Current 650mA; 450mA power (Pd) 310mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 400m Ω @ 590mA, 10V package SOT-363 MOSFET brand DIODES (American) DMC3400SDW-7 series DMC3400SDW
  • PDF DMC3400SDW-7.pdf
Consultation
DMC2700UDM-7

DMC2700UDM-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC2700UDM-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.34A; 1.14A power (Pd) 1.12W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 400m Ω @ 600mA, 4.5V package SOT-26 field-effect transistor (MOSFET) brand DIODES (American) DMC2700UDM-7 series DMC2700UDM
  • PDF DMC2700UDM-7.pdf
Consultation
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