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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
ZXMP10A17GTA

ZXMP10A17GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP10A17GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 1.7A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 350m Ω @ 10V, 2.4A Package SOT-223 MOSFET Brand DIODES (USA) ZXMP10A17GTA Series ZXMP10A17GTA
  • PDF ZXMP10A17GTA.pdf
Consultation
DMC4040SSD-13

DMC4040SSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC4040SSD-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 1.8V@250uA Current 6.8A Power (Pd) 1.8W Channel 1 N and 1 P Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 3A Package SOP-8 MOSFET Brand DIODES DMC4040SSD-13 Series DMC4040SSD
  • PDF DMC4040SSD-13.pdf
Consultation
ZVN4424GTA

ZVN4424GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN4424GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionManufacturer DIODES (Taiwan) Product Classification MOSFET Series ZVN4424GTA Installation Type SMT Package/Housing SOT-223 Threshold Voltage (Vgs (th) @ Id) 1.8V@1mA Current 500mA power (Pd) 2.5W withstand voltage 240V conduction resistance (RDS (on) @ Vgs, Id) 5.5 Ω @ 10V, 500mA channel N
  • PDF ZVN4424GTA.pdf
Consultation
DMN2990UFA-7B

DMN2990UFA-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2990UFA-7B
  • PackageXFDFN-3(0.6x0.8)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 510mA Power (Pd) 400mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 990m Ω @ 4.5V, 100mA Package XFDFN-3 (0.6x0.8) MOSFET Brand DIODES DMN2990UFA-7B Series DMN2990UFA
  • PDF DMN2990UFA-7B.pdf
Consultation
DMP2004VK-7

DMP2004VK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2004VK-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 530mA, power (Pd) 400mW, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 900m Ω @ 4.5V, 430mA package SOT-563 MOSFET brand DIODES (American) DMP2004VK-7 series DMP2004VK
  • PDF DMP2004VK-7.pdf
Consultation
DMP2130L-7

DMP2130L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2130L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.25V@250uA Current 3A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 51m Ω @ 4.5V, 3.5A Package SOT-23 MOSFET Brand DIODES DMP2130L-7 Series DMP2130L
  • PDF DMP2130L-7.pdf
Consultation
DMT6010LFG-7

DMT6010LFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT6010LFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 13A; 30A power (Pd) 2.2W; 41W channel N conduction resistance (RDS (on) @ Vgs, Id) 7.5m Ω @ 10V, 20A package PowerDI3333-8 MOSFET brand DIODES (Meitai) DMT6010LFG-7 series DMT6010LFG
  • PDF DMT6010LFG-7.pdf
Consultation
DMP3130L-7

DMP3130L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3130L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.3V@250uA Current 3.5A Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 77m Ω @ 10V, 4.2A Package SOT-23 MOSFET Brand DIODES DMP3130L-7 Series DMP3130L
  • PDF DMP3130L-7.pdf
Consultation
DMN3032LFDB-7

DMN3032LFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3032LFDB-7
  • PackageDMN3032LFDB-7
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 6.2A Power (Pd) 1W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 30m Ω @ 10V, 5.8A Package DMN3032LFDB-7 Field Effect Transistor (MOSFET) Brand DIODES (American) DMN3032LFDB-7 Series DMN3032LFDB
  • PDF DMN3032LFDB-7.pdf
Consultation
ZXMN6A08E6TA

ZXMN6A08E6TA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN6A08E6TA
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.8A Power (Pd) 1.1W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 80m Ω @ 10V, 4.8A Package SOT-23-6 MOSFET Brand DIODES (Meitai) ZXMN6A08E6TA Series ZXMN6A08E6TA
  • PDF ZXMN6A08E6TA.pdf
Consultation
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