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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
DMN30H4D0L-13

DMN30H4D0L-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN30H4D0L-13
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 300V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 250mA Power (Pd) 310mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 4 Ω @ 300mA, 10V Package SOT-23-3 MOSFET Brand DIODES (Meitai) DMN30H4D0L-13 Series DMN30H4D0L
  • PDF DMN30H4D0L-13.pdf
Consultation
ZVN3310A

ZVN3310A-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN3310A
  • PackageTO-92-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2.4V@1mA Current 200mA Power (Pd) 625mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 500mA, 10V Package TO-92-3 MOSFET Brand DIODES (Meitai) ZVN3310A Series ZVN3310A
  • PDF ZVN3310A.pdf
Consultation
DMN2300U-7

DMN2300U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2300U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 1.24A Power (Pd) 430mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 175m Ω @ 4.5V, 300mA Package SOT-23 MOSFET Brand DIODES DMN2300U-7 Series DMN2300U
  • PDF DMN2300U-7.pdf
Consultation
BSS84DWQ-7

BSS84DWQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS84DWQ-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 130mA Power (Pd) 300mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 5V, 1mA Package SOT-363 MOSFET Brand DIODES (American) BSS84DWQ-7 Series BSS84DWQ
  • PDF BSS84DWQ-7.pdf
Consultation
DMN3730UFB4-7

DMN3730UFB4-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3730UFB4-7
  • PackageX2-DFN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 750mA Power (Pd) 470mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 460m Ω @ 4.5V, 200mA Package X2-DFN1006-3 MOSFET Brand DIODES DMN3730UFB4-7 Series DMN3730UFB4
  • PDF DMN3730UFB4-7.pdf
Consultation
DMP3056LSD-13

DMP3056LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3056LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 6.9A, power (Pd) 2.5W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 45m Ω @ 10V, 6A package SO-8 field-effect transistor (MOSFET) brand DIODES (American) DMP3056LSD-13 series DMP3056LSD
  • PDF DMP3056LSD-13.pdf
Consultation
DMG9926UDM-7

DMG9926UDM-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG9926UDM-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 980mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 28m Ω @ 4.5V, 8.2A Package SOT-23-6 MOSFET Brand DIODES DMG9926UDM-7 Series DMG9926UDM
  • PDF DMG9926UDM-7.pdf
Consultation
DMP2045UFY4-7

DMP2045UFY4-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2045UFY4-7
  • PackageX2-DFN2015-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4.7A Power (Pd) 670mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 45m Ω @ 4A, 4.5V Package X2-DFN2015-3 MOSFET Brand DIODES DMP2045UFY4-7 Series DMP2045UFY4
  • PDF DMP2045UFY4-7.pdf
Consultation
DMN53D0LDW-7

DMN53D0LDW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN53D0LDW-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 360mA, power (Pd) 310mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 1.6 Ω @ 10V, 500mA package SOT-363 MOSFET brand DIODES (Meitai) DMN53D0LDW-7 series DMN53D0LDW
  • PDF DMN53D0LDW-7.pdf
Consultation
DMG1013UWQ-7

DMG1013UWQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1013UWQ-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 820mA Power (Pd) 310mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 750m Ω @ 4.5V, 430mA Package SOT-323 MOSFET Brand DIODES (Meitai) DMG1013UWQ-7 Series DMG1013UWQ
  • PDF DMG1013UWQ-7.pdf
Consultation
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