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DMC1229UFDB-7

DMC1229UFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC1229UFDB-7
  • PackageU-DFN2020-6B
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5.6A; 3.8A power (Pd) 1.4W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 17m Ω @ 4.5V, 5A; 37m Ω @ 4.5V, 3.6A package U-DFN2020-6B MOSFET brand DIODES (Meitai) DMC1229UFDB-7 series DMC1229UFDB
  • PDF DMC1229UFDB-7.pdf
DMG6968UQ-7

DMG6968UQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6968UQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 6.5A Power (Pd) 1.3W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 4.5V, 6.5A Package SOT-23 MOSFET Brand DIODES (American) DMG6968UQ-7 Series DMG6968UQ
  • PDF DMG6968UQ-7.pdf
DMP1045UFY4-7

DMP1045UFY4-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP1045UFY4-7
  • PackageX2-DFN2015-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5.5A Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 32m Ω @ 4.5V, 4A Package X2-DFN2015-3 MOSFET Brand DIODES DMP1045UFY4-7 Series DMP1045UFY4
  • PDF DMP1045UFY4-7.pdf
DMG1016UDW-7

DMG1016UDW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1016UDW-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.07A; 845mA power (Pd) 330mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 450m Ω @ 600mA, 4.5V package SOT-363 MOSFET brand DIODES (American) DMG1016UDW-7 series DMG1016UDW
  • PDF DMG1016UDW-7.pdf
DMC3025LSD-13

DMC3025LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC3025LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 6.5A; 4.2A power (Pd) 1.2W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 20m Ω @ 7.4A, 10V package SO-8 field-effect transistor (MOSFET) brand DIODES (American) DMC3025LSD-13 series DMC3025LSD
  • PDF DMC3025LSD-13.pdf
DMN3731U-7

DMN3731U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3731U-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 900mA Power (Pd) 400mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 460m Ω @ 200mA, 4.5V Package SOT-23-3 MOSFET Brand DIODES DMN3731U-7 Series DMN3731U
  • PDF DMN3731U-7.pdf
DMG6968UDM-7

DMG6968UDM-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6968UDM-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 6.5A Power (Pd) 850mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 24m Ω @ 4.5V, 6.5A Package SOT-23-6 MOSFET Brand DIODES (US) DMG6968UDM-7 Series DMG6968UDM
  • PDF DMG6968UDM-7.pdf
DMTH43M8LPSQ-13

DMTH43M8LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH43M8LPSQ-13
  • PackagePower-DI-5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 22A; 100A power (Pd) 2.7W channel N conduction resistance (RDS (on) @ Vgs, Id) 3.3m Ω @ 20A, 10V package Power-DI-5060-8 MOSFET brand DIODES (American) DMTH43M8LPSQ-13 series DMTH43M8LPSQ
  • PDF DMTH43M8LPSQ-13.pdf
ZVP2110A

ZVP2110A-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVP2110A
  • PackageTO-92L-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 230mA Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 8 Ω @ 10V, 375mA Package TO-92L-3 MOSFET Brand DIODES (Meitai) ZVP2110A Series ZVP2110A
  • PDF ZVP2110A.pdf
DMN601DMK-7

DMN601DMK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN601DMK-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@1mA Current 510mA, power (Pd) 700mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 2.4 Ω @ 10V, 200mA package SOT-23-6 MOSFET brand DIODES (American) DMN601DMK-7 series DMN601DMK
  • PDF DMN601DMK-7.pdf
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