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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
STP2N80K5

STP2N80K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP2N80K5
  • PackageTO-220-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP2N80K5封装TO-220-3FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）800 V25°C 时电流 - 连续漏极 (Id)2A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）4.5 欧姆 @ 1A，10V不…
  • PDF STP2N80K5.pdf
Consultation
STB15N80K5

STB15N80K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTB15N80K5
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB15N80K5封装 D2PAK类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)14A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)300mΩ@10V,7A阈值电压(Vgs(th)@Id)4V@100uA栅极电荷(Qg@Vgs)32nC@10V输入电容(Ciss@Vds)1.1nF@100v反向传输电…
  • PDF STB15N80K5.pdf
Consultation
STP16NF06L

STP16NF06L-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP16NF06L
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP16NF06L封装TO-220类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)16A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)90mΩ@10V,8A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)10nC@5V输入电容(Ciss@Vds)345pF@25V工作温度-55℃…
  • PDF STP16NF06L.pdf
Consultation
STP24N60DM2

STP24N60DM2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP24N60DM2
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP24N60DM2封装TO-220类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)18A功率(Pd)150W导通电阻(RDS(on)@Vgs,Id)200mΩ@9A,10V阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)29nC@10V输入电容(Ciss@Vds)1.055nF@100V反向传输…
  • PDF STP24N60DM2.pdf
Consultation
STF21N65M5

STF21N65M5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTF21N65M5
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF21N65M5封装TO-220FP类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)17A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)190mΩ@8.5A,10V阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)50nC@10V输入电容(Ciss@Vds)1.95nF@100V反向传…
  • PDF STF21N65M5.pdf
Consultation
STP40NF03L

STP40NF03L-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP40NF03L
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP40NF03L封装TO-220类型1个N沟道漏源电压(Vdss)30V连续漏极电流(Id)40A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)18mΩ@10V,20A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)15nC@4.5V输入电容(Ciss@Vds)770pF@25V反向传输电…
  • PDF STP40NF03L.pdf
Consultation
STW30N65M5

STW30N65M5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTW30N65M5
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW30N65M5封装TO-247-3类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)22A功率(Pd)140W导通电阻(RDS(on)@Vgs,Id)139mΩ@11A,10V阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)64nC@10V输入电容(Ciss@Vds)2.88nF@100V
  • PDF STW30N65M5.pdf
Consultation
STD18NF25

STD18NF25-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD18NF25
  • PackageTO-252
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD18NF25封装TO-252类型1个N沟道漏源电压(Vdss)250V连续漏极电流(Id)17A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)165mΩ@8.5A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)29.5nC@10V输入电容(Ciss@Vds)1nF@25V工作温度-5…
  • PDF STD18NF25.pdf
Consultation
STD25NF20

STD25NF20-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD25NF20
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD25NF20封装DPAK类型1个N沟道漏源电压(Vdss)200V连续漏极电流(Id)18A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)125mΩ@10V,10A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)39nC@10V输入电容(Ciss@Vds)940pF@25V工作温度-55℃…
  • PDF STD25NF20.pdf
Consultation
STW34N65M5

STW34N65M5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTW34N65M5
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW34N65M5封装TO-247-3类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)28A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)90mΩ@10V,14A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)62.5nC@10V输入电容(Ciss@Vds)2.7nF@100V反向传…
  • PDF STW34N65M5.pdf
Consultation
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