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DMN1029UFDB-7

DMN1029UFDB-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN1029UFDB-7
  • PackageDFN-6(2x2)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5.6A Power (Pd) 1.4W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 29m Ω @ 5A, 4.5V Package DFN-6 (2x2) MOSFET Brand DIODES (American) DMN1029UFDB-7 Series DMN1029UFDB
  • PDF DMN1029UFDB-7.pdf
ZXMN4A06GTA

ZXMN4A06GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN4A06GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 5A Power (Pd) 2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 4.5A Package SOT-223 MOSFET Brand DIODES (USA) ZXMN4A06GTA Series ZXMN4A06GTA
  • PDF ZXMN4A06GTA.pdf
DMP26M7UFG-7

DMP26M7UFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP26M7UFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 18A; 40A power (Pd) 2.3W channel P conduction resistance (RDS (on) @ Vgs, Id) 6.7m Ω @ 4.5V, 15A package PowerDI3333-8 MOSFET brand DIODES (American) DMP26M7UFG-7 series DMP26M7UFG
  • PDF DMP26M7UFG-7.pdf
2N7002DWQ-7-F

2N7002DWQ-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002DWQ-7-F
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 230mA, power (Pd) 310mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 7.5 Ω @ 5V, 50mA package SOT-363 Field Effect Transistor (MOSFET) brand DIODES (Meitai) 2N7002DWQ-7-F series 2N7002DWQ
  • PDF 2N7002DWQ-7-F.pdf
DMG3406L-7

DMG3406L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3406L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 3.6A Power (Pd) 770mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 3.6A Package SOT-23 MOSFET Brand DIODES (American) DMG3406L-7 Series DMG3406L
  • PDF DMG3406L-7.pdf
DMTH4008LPSQ-13

DMTH4008LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH4008LPSQ-13
  • PackagePowerDI-5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 14.4A; 64.8A power (Pd) 2.99W; 55.5W channel N conduction resistance (RDS (on) @ Vgs, Id) 8.8m Ω @ 10A, 10V package PowerDI-5060-8 MOSFET brand DIODES (Meitai) DMTH4008LPSQ-13 series DMTH4008LPSQ
  • PDF DMTH4008LPSQ-13.pdf
DMP3056LSS-13

DMP3056LSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3056LSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 7.1A Power (Pd) 2.5W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 45m Ω @ 10V, 6A Package SOP-8 MOSFET Brand DIODES (American) DMP3056LSS-13 Series DMP3056LSS
  • PDF DMP3056LSS-13.pdf
DMN2005UFG-13

DMN2005UFG-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2005UFG-13
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 18.1A Power (Pd) 1.05W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 4.6m Ω @ 4.5V, 13.5A Package PowerDI3333-8 MOSFET Brand DIODES DMN2005UFG-13 Series DMN2005UFG
  • PDF DMN2005UFG-13.pdf
ZVP3306FTA

ZVP3306FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVP3306FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 90mA Power (Pd) 330mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 14 Ω @ 10V, 200mA Package SOT-23 MOSFET Brand DIODES (USA) ZVP3306FTA Series ZVP3306FTA
  • PDF ZVP3306FTA.pdf
DMP3028LSD-13

DMP3028LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3028LSD-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 6A, power (Pd) 1.3W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 7A package SO-8 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP3028LSD-13 series DMP3028LSD
  • PDF DMP3028LSD-13.pdf
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