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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
DMN3016lSS-13

DMN3016lSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3016lSS-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 10.3A Power (Pd) 1.5W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 12m Ω @ 10V, 12A Package SO-8 MOSFET Brand DIODES (American) DMN3016lSS-13 Series DMN3016lSS
  • PDF DMN3016lSS-13.pdf
Consultation
DMG3414UQ-7

DMG3414UQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3414UQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 780mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 4.5V, 8.2A Package SOT-23 MOSFET Brand DIODES (Meitai) DMG3414UQ-7 Series DMG3414UQ
  • PDF DMG3414UQ-7.pdf
Consultation
DMN3404LQ-7

DMN3404LQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3404LQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 5.8A Power (Pd) 720mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 28m Ω @ 5.8A, 10V Package SOT-23 MOSFET Brand DIODES DMN3404LQ-7 Series DMN3404LQ
  • PDF DMN3404LQ-7.pdf
Consultation
DMP3028LFDE-7

DMP3028LFDE-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3028LFDE-7
  • PackageUDFN2020-6-EP
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.4V@250uA Current 6.8A Power (Pd) 660mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 32m Ω @ 10V, 7A Package UDFN2020-6-EP MOSFET Brand DIODES (American) DMP3028LFDE-7 Series DMP3028LFDE
  • PDF DMP3028LFDE-7.pdf
Consultation
DMP1009UFDF-7

DMP1009UFDF-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP1009UFDF-7
  • PackageUDFN2020-6-EP
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 15A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 11m Ω @ 4.5V, 5A Package UDFN2020-6-EP MOSFET Brand DIODES DMP1009UFDF-7 Series DMP1009UFDF
  • PDF DMP1009UFDF-7.pdf
Consultation
DMT6009LFG-7

DMT6009LFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT6009LFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 11A; 34A power (Pd) 2.08W; 19.2W channel N conduction resistance (RDS (on) @ Vgs, Id) 10m Ω @ 10V, 13.5A package PowerDI3333-8 MOSFET brand DIODES (Meitai) DMT6009LFG-7 series DMT6009LFG
  • PDF DMT6009LFG-7.pdf
Consultation
DMT10H010LK3-13

DMT10H010LK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT10H010LK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 68.8A Power (Pd) 3W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 8.8m Ω @ 10V, 13A Package TO-252 MOSFET Brand DIODES (Meitai) DMT10H010LK3-13 Series DMT10H010LK3
  • PDF DMT10H010LK3-13.pdf
Consultation
DMP6350SQ-7

DMP6350SQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6350SQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 1.5A Power (Pd) 720mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 350m Ω @ 900mA, 10V Package SOT-23 MOSFET Brand DIODES DMP6350SQ-7 Series DMP6350SQ
  • PDF DMP6350SQ-7.pdf
Consultation
DMP2104LP-7

DMP2104LP-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2104LP-7
  • PackageX1-DFN1411-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.5A Power (Pd) 500mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 150m Ω @ 4.5V, 900mA Package X1-DFN1411-3 MOSFET Brand DIODES DMP2104LP-7 Series DMP2104LP
  • PDF DMP2104LP-7.pdf
Consultation
DMN62D1SFB-7B

DMN62D1SFB-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN62D1SFB-7B
  • PackageX1-DFN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.3V@250uA Current 410mA Power (Pd) 470mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1.4 Ω @ 40mA, 10V Package X1-DFN1006-3 MOSFET Brand DIODES DMN62D1SFB-7B Series DMN62D1SFB
  • PDF DMN62D1SFB-7B.pdf
Consultation
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