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DIODES(美台)

DIODES(美台)

ZVN3306FTA

ZVN3306FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN3306FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.4V@1mA Current 150mA Power (Pd) 330mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 500mA Package SOT-23 MOSFET Brand DIODES (USA) ZVN3306FTA Series ZVN3306FTA
  • PDF ZVN3306FTA.pdf
Consultation
DMPH6050SK3-13

DMPH6050SK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMPH6050SK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 7.2A; 23.6A power (Pd) 1.9W channel P conduction resistance (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 7A package TO-252 field-effect transistor (MOSFET) brand DIODES (American) DMPH6050SK3-13 series DMPH6050SK3
  • PDF DMPH6050SK3-13.pdf
Consultation
DMN62D0U-13

DMN62D0U-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN62D0U-13
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 380mA Power (Pd) 380mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 100mA, 4.5V Package SOT-23 MOSFET Brand DIODES DMN62D0U-13 Series DMN62D0U
  • PDF DMN62D0U-13.pdf
Consultation
DMP21D5UFB4-7B

DMP21D5UFB4-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP21D5UFB4-7B
  • PackageDFN-3(0.6x1)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 700mA Power (Pd) 460mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 970m Ω @ 5V, 100mA Package DFN-3 (0.6x1) MOSFET Brand DIODES DMP21D5UFB4-7B Series DMP21D5UFB4
  • PDF DMP21D5UFB4-7B.pdf
Consultation
DMN3200U-7

DMN3200U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3200U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.2A Power (Pd) 650mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 90m Ω @ 4.5V, 2.2A Package SOT-23 MOSFET Brand DIODES (American) DMN3200U-7 Series DMN3200U
  • PDF DMN3200U-7.pdf
Consultation
BSS138-13-F

BSS138-13-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS138-13-F
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 200mA Power (Pd) 300mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3.5 Ω @ 10V, 220mA Package SOT-23 MOSFET Brand DIODES (American) BSS138-13-F Series BSS138
  • PDF BSS138-13-F.pdf
Consultation
ZVN4525E6TA

ZVN4525E6TA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN4525E6TA
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 250V threshold voltage (Vgs (th) @ Id) 1.8V@1mA Current 230mA Power (Pd) 1.1W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 8.5 Ω @ 10V, 500mA Package SOT-26 MOSFET Brand DIODES (Meitai) ZVN4525E6TA Series ZVN4525E6TA
  • PDF ZVN4525E6TA.pdf
Consultation
DMN60H080DS-7

DMN60H080DS-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN60H080DS-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 80mA Power (Pd) 1.1W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 100 Ω @ 60mA, 10V Package SOT-23-3 MOSFET Brand DIODES DMN60H080DS-7 Series DMN60H080DS
  • PDF DMN60H080DS-7.pdf
Consultation
DMT6016LFDF-7

DMT6016LFDF-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT6016LFDF-7
  • PackageDFN-6(2x2)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 8.9A Power (Pd) 820mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 16m Ω @ 10V, 10A Package DFN-6 (2x2) MOSFET Brand DIODES DMT6016LFDF-7 Series DMT6016LFDF
  • PDF DMT6016LFDF-7.pdf
Consultation
ZXMP6A17E6TA

ZXMP6A17E6TA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP6A17E6TA
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.3A Power (Pd) 1.1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 125m Ω @ 10V, 2.3A Package SOT-26 MOSFET Brand DIODES (USA) ZXMP6A17E6TA Series ZXMP6A17E6TA
  • PDF ZXMP6A17E6TA.pdf
Consultation
DMP6185SEQ-13

DMP6185SEQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6185SEQ-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 3A Power (Pd) 2.2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 150m Ω @ 10V, 2.2A Package SOT-223 MOSFET Brand DIODES DMP6185SEQ-13 Series DMP6185SEQ
  • PDF DMP6185SEQ-13.pdf
Consultation
DMP3010LPSQ-13

DMP3010LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3010LPSQ-13
  • PackagePowerDI5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 36A Power (Pd) 2.18W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 7.5m Ω @ 10V, 10A Package PowerDI5060-8 MOSFET Brand DIODES (American) DMP3010LPSQ-13 Series DMP3010LPSQ
  • PDF DMP3010LPSQ-13.pdf
Consultation
BS870-7-F

BS870-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBS870-7-F
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 250mA Power (Pd) 300mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 200mA Package SOT-23 MOSFET Brand DIODES BS870-7-F Series BS870
  • PDF BS870-7-F.pdf
Consultation
DMC2053UVT-7

DMC2053UVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC2053UVT-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4.6A; 3.2A power (Pd) 700mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 35m Ω @ 5A, 4.5; 74m Ω @ 3.5A, 4.5V package SOT-26 MOSFET brand DIODES (Meitai) DMC2053UVT-7 series DMC2053UVT
  • PDF DMC2053UVT-7.pdf
Consultation
DMP2088LCP3-7

DMP2088LCP3-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2088LCP3-7
  • PackageX2-DSN1006-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 2.9A Power (Pd) 1.13W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 88m Ω @ 8V, 500mA Package X2-DSN1006-3 MOSFET Brand DIODES DMP2088LCP3-7 Series DMP2088LCP3
  • PDF DMP2088LCP3-7.pdf
Consultation
DMG4466SSS-13

DMG4466SSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG4466SSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.4V@250uA Current 10A power (Pd) 1.42W channel N conduction resistance (RDS (on) @ Vgs, Id) 23m Ω @ 10V, 10A package SOP-8 field-effect transistor (MOSFET) brand DIODES (Meitai) DMG4466SSS-13 series DMG4466SSS
  • PDF DMG4466SSS-13.pdf
Consultation
DMT6008LFG-7

DMT6008LFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT6008LFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 13A; 60A power (Pd) 2.2W; 41W channel N conduction resistance (RDS (on) @ Vgs, Id) 7.5m Ω @ 10V, 20A package PowerDI3333-8 MOSFET brand DIODES (Meitai) DMT6008LFG-7 series DMT6008LFG
  • PDF DMT6008LFG-7.pdf
Consultation
DMP2123L-7

DMP2123L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2123L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.25V@250uA Current 3A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 72m Ω @ 4.5V, 3.5A Package SOT-23 MOSFET Brand DIODES DMP2123L-7 Series DMP2123L
  • PDF DMP2123L-7.pdf
Consultation
DMC21D1UDA-7B

DMC21D1UDA-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC21D1UDA-7B
  • PackageDFN-6(0.6x0.8)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 328mA; 455mA power (Pd) 300mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 990m Ω @ 100mA, 4.5; 1.9 Ω @ 100mA, 4.5V package DFN-6 (0.6x0.8) MOSFET brand DIODES (Meitai) DMC21D1UDA-7B series DMC21D1UDA
  • PDF DMC21D1UDA-7B.pdf
Consultation
DMN65D8LDW-7

DMN65D8LDW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN65D8LDW-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 180mA, power (Pd) 300mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 6 Ω @ 10V, 115mA packaged SOT-363 MOSFET brand DIODES (Meitai) DMN65D8LDW-7 series DMN65D8LDW
  • PDF DMN65D8LDW-7.pdf
Consultation
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