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DIODES(美台)

DIODES(美台)

ZXMP7A17GTA

ZXMP7A17GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP7A17GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 70V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.6A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 160m Ω @ 10V, 2.1A Package SOT-223 MOSFET Brand DIODES (USA) ZXMP7A17GTA Series ZXMP7A17GTA
  • PDF ZXMP7A17GTA.pdf
Consultation
DMN1019UVT-7

DMN1019UVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN1019UVT-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 800mV@250uA Current 10.7A Power (Pd) 1.73W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 10m Ω @ 4.5V, 9.7A Package SOT-26 MOSFET Brand DIODES DMN1019UVT-7 Series DMN1019UVT
  • PDF DMN1019UVT-7.pdf
Consultation
ZVN2106A

ZVN2106A-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN2106A
  • PackageTO-92
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.4V@1mA Current 450mA, power (Pd) 700mW, channel N conduction resistance (RDS (on) @ Vgs, Id) 2 Ω @ 10V, 1A package TO-92 field-effect transistor (MOSFET) brand DIODES (USA) ZVN2106A series ZVN2106A
  • PDF ZVN2106A.pdf
Consultation
DMN32D2LFB4-7

DMN32D2LFB4-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN32D2LFB4-7
  • PackageDFN-3(0.6x1)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 300mA Power (Pd) 350mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1.2 Ω @ 4V, 100mA Package DFN-3 (0.6x1) MOSFET Brand DIODES DMN32D2LFB4-7 Series DMN32D2LFB4
  • PDF DMN32D2LFB4-7.pdf
Consultation
DMG7401SFG-7

DMG7401SFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG7401SFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 9.8A Power (Pd) 940mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 11m Ω @ 20V, 12A Package PowerDI3333-8 MOSFET Brand DIODES (USA) DMG7401SFG-7 Series DMG7401SFG
  • PDF DMG7401SFG-7.pdf
Consultation
DMN2041L-7

DMN2041L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2041L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 6.4A Power (Pd) 780mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 28m Ω @ 4.5V, 6A Package SOT-23 MOSFET Brand DIODES (American) DMN2041L-7 Series DMN2041L
  • PDF DMN2041L-7.pdf
Consultation
ZVP4525ZTA

ZVP4525ZTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVP4525ZTA
  • PackageSOT-89
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 250V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 205mA Power (Pd) 1.2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 14 Ω @ 10V, 200mA Package SOT-89 MOSFET Brand DIODES (USA) ZVP4525ZTA Series ZVP4525ZTA
  • PDF ZVP4525ZTA.pdf
Consultation
DMG1016V-7

DMG1016V-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1016V-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 870mA; 640mA power (Pd) 530mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 400m Ω @ 600mA, 4.5V package SOT-563 field-effect transistor (MOSFET) brand DIODES (American) DMG1016V-7 series DMG1016V
  • PDF DMG1016V-7.pdf
Consultation
DMG2305UXQ-7

DMG2305UXQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG2305UXQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 52m Ω @ 4.5V, 4.2A Package SOT-23 MOSFET Brand DIODES (American) DMG2305UXQ-7 Series DMG2305UXQ
  • PDF DMG2305UXQ-7.pdf
Consultation
DMP2066LSN-7

DMP2066LSN-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2066LSN-7
  • PackageSC-59
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 4.6A Power (Pd) 1.25W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 40m Ω @ 4.5V, 4.6A Package SC-59 MOSFET Brand DIODES (American) DMP2066LSN-7 Series DMP2066LSN
  • PDF DMP2066LSN-7.pdf
Consultation
DMNH6042SSDQ-13

DMNH6042SSDQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMNH6042SSDQ-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 16.7A Power (Pd) 2.1W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 5.1A Package SOP-8 MOSFET Brand DIODES (Meitai) DMNH6042SSDQ-13 Series DMNH6042SSDQ
  • PDF DMNH6042SSDQ-13.pdf
Consultation
DMN601DWK-7

DMN601DWK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN601DWK-7
  • PackageSOT-363-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@1mA Current 305mA Power (Pd) 200mW Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 2 Ω @ 10V, 500mA Package SOT-363-6 MOSFET Brand DIODES DMN601DWK-7 Series DMN601DWK
  • PDF DMN601DWK-7.pdf
Consultation
DMG301NU-7

DMG301NU-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG301NU-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 25V threshold voltage (Vgs (th) @ Id) 1.1V@250uA Current 260mA Power (Pd) 320mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 4 Ω @ 4.5V, 400mA Package SOT-23 MOSFET Brand DIODES (American) DMG301NU-7 Series DMG301NU
  • PDF DMG301NU-7.pdf
Consultation
DMG3406L-13

DMG3406L-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3406L-13
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 3.6A Power (Pd) 770mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 3.6A Package SOT-23 MOSFET Brand DIODES DMG3406L-13 Series DMG3406L
  • PDF DMG3406L-13.pdf
Consultation
ZXMN6A07ZTA

ZXMN6A07ZTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMN6A07ZTA
  • PackageSOT-89
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 1.9A Power (Pd) 1.5W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 250m Ω @ 10V, 1.8A Package SOT-89 MOSFET Brand DIODES (USA) ZXMN6A07ZTA Series ZXMN6A07ZTA
  • PDF ZXMN6A07ZTA.pdf
Consultation
DMPH6250SQ-7

DMPH6250SQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMPH6250SQ-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2.4A Power (Pd) 920mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 155m Ω @ 2A, 10V Package SOT-23-3 MOSFET Brand DIODES DMPH6250SQ-7 Series DMPH6250SQ
  • PDF DMPH6250SQ-7.pdf
Consultation
DMN3016LK3-13

DMN3016LK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3016LK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.3V@250uA Current 12.4A Power (Pd) 1.6W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 12m Ω @ 10V, 11A Package TO-252 MOSFET Brand DIODES DMN3016LK3-13 Series DMN3016LK3
  • PDF DMN3016LK3-13.pdf
Consultation
DMP6023LFGQ-7

DMP6023LFGQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6023LFGQ-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 7.7A Power (Pd) 1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 5A, 10V Package PowerDI3333-8 MOSFET Brand DIODES (Meitai) DMP6023LFGQ-7 Series DMP6023LFGQ
  • PDF DMP6023LFGQ-7.pdf
Consultation
DMP6110SSS-13

DMP6110SSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6110SSS-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 4.5A Power (Pd) 1.5W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 110m Ω @ 10V, 4.5A Package SO-8 MOSFET Brand DIODES DMP6110SSS-13 Series DMP6110SSS
  • PDF DMP6110SSS-13.pdf
Consultation
DMP4025SFG-13

DMP4025SFG-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4025SFG-13
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 1.8V@250uA Current 4.65A Power (Pd) 810mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 3A Package PowerDI3333-8 MOSFET Brand DIODES (USA) DMP4025SFG-13 Series DMP4025SFG
  • PDF DMP4025SFG-13.pdf
Consultation
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