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Home > All Products > Triode/MOS transistor/transistor
STB10N95K5

STB10N95K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTB10N95K5
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB10N95K5封装D2PAK类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)8A功率(Pd)130W导通电阻(RDS(on)@Vgs,Id)800mΩ@4A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)22nC@10V输入电容(Ciss@Vds)630pF@100V工作温度-55℃…
  • PDF STB10N95K5.pdf
Consultation
STB120NF10T4

STB120NF10T4-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTB120NF10T4
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB120NF10T4封装D2PAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)110A功率(Pd)312W导通电阻(RDS(on)@Vgs,Id)10.5mΩ@10V,60A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)233nC@10V输入电容(Ciss@Vds)5.2nF@25V工作温…
  • PDF STB120NF10T4.pdf
Consultation
STB10N95K5

STB10N95K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTB10N95K5
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB10N95K5封装D2PAK类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)8A功率(Pd)130W导通电阻(RDS(on)@Vgs,Id)800mΩ@4A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)22nC@10V输入电容(Ciss@Vds)630pF@100V工作温度-55℃…
  • PDF STB10N95K5.pdf
Consultation
STW15N95K5

STW15N95K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTW15N95K5
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW15N95K5封装TO-247-3类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)12A功率(Pd)170W导通电阻(RDS(on)@Vgs,Id)410mΩ@10V,6A阈值电压(Vgs(th)@Id)4V@100uA栅极电荷(Qg@Vgs)30nC@10V输入电容(Ciss@Vds)855pF@100V反向传输…
  • PDF STW15N95K5.pdf
Consultation
STF13N65M2

STF13N65M2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTF13N65M2
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF13N65M2封装TO-220FP类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)10A功率(Pd)25W导通电阻(RDS(on)@Vgs,Id)430mΩ@5A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)590pF@100V反向传输电…
  • PDF STF13N65M2.pdf
Consultation
STL3NM60N

STL3NM60N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL3NM60N
  • PackagePowerFLAT-8(3.3x3.3)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL3NM60N封装 PowerFLAT-8(3.3x3.3)FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）600 V25°C 时电流 - 连续漏极 (Id)650mA（Ta），2.2A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（…
  • PDF STL3NM60N.pdf
Consultation
STP11N65M5

STP11N65M5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP11N65M5
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP11N65M5封装TO-220类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)9A功率(Pd)85W导通电阻(RDS(on)@Vgs,Id)480mΩ@4.5A,10V阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)644pF@100V反向传输电…
  • PDF STP11N65M5.pdf
Consultation
STP80N240K6

STP80N240K6-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP80N240K6
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP80N240K6封装TO-220类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)16A功率(Pd)140W导通电阻(RDS(on)@Vgs,Id)220mΩ@7A,10V阈值电压(Vgs(th)@Id)4V@100uA栅极电荷(Qg@Vgs)25.9nC@10V输入电容(Ciss@Vds)1.35nF@100V工作温…
  • PDF STP80N240K6.pdf
Consultation
STD3NK100Z

STD3NK100Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD3NK100Z
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD3NK100Z封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)1kV连续漏极电流(Id)2.5A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)6Ω@10V,1.25A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)18nC@10V输入电容(Ciss@Vds)601pF@25V工作…
  • PDF STD3NK100Z.pdf
Consultation
STP14NM50N

STP14NM50N-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP14NM50N
  • PackageTO-220AB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP14NM50N封装TO-220AB-3类型1个N沟道漏源电压(Vdss)500V连续漏极电流(Id)12A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)320mΩ@10V,6A阈值电压(Vgs(th)@Id)4V@100uA栅极电荷(Qg@Vgs)27nC@10V输入电容(Ciss@Vds)816pF@50V工作温度…
  • PDF STP14NM50N.pdf
Consultation
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