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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
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Package：
D2PAKDFN(5x6)DFN-12(4.5x5)DFN-3(0.6x0.8)DFN-3(0.6x1)DFN-3(1.5x2)DFN-6(0.6x0.8)DFN-6(2x2)DFN-6-EP(2x2)DFN-6L(2x2)DFN-8(3.1x3.2)DFN-8(3.3x3.3)DFN-8(3x3)DFN-8(4.9x5.7)DFN-8(4.9x5.8)DFN-8(5.1x6)DFN-8(5.7x5.1)DFN-8(5.8x4.9)DFN-8(5x6)DFN-8L(3.3x3.3)DFN-8L(3x3)DFN-8L(5x6)DFN2020-6DFN2x2-6LDMN3032LFDB-7DPAKESOP-8FDFN-8L(5x6)H2PAK-2ISOTOPPDFN-8(3.1x3.1)PDFN-8(3.1x3.2)PDFN-8(3.3x3.3)PDFN-8(4.9x5.8)PDFN-8(5.1x5.8)PDFN-8(5.2x6.2)PDFN-8(5.8x4.9)PDFN-8(5x5)PDFN-8(5x5.8)PDFN3333-8Power-DI-5060-8PowerDI-3333-8PowerDI-5060-8PowerDI-8(5x6)PowerDI1012-8PowerDI3333-8PowerDI5060-8PowerFLAT(3.3x3.3)PowerFLAT-5x6PowerFLAT-5x6-8PowerFlat-8PowerFLAT-8(3.3x3.3)PowerFLAT-8(5x6)PowerVDFN-8SC-59SC-70-3SMDSO-8SOD-323SOIC-8SOP-8SOP-8-4.0mmSOT-223SOT-223-2SOT-223-3SOT-223-3LSOT-223-4SOT-23SOT-23-3SOT-23-3LSOT-23-6SOT-23-6LSOT-23FSOT-26SOT-323SOT-363SOT-363-6SOT-523SOT-523-3SOT-563SOT-89SOT-89-3SOT-89-3LSOT-963SOT-963-6TDFN-8-PowerTO-220TO-220-3TO-220-3LTO-220AB-3TO-220FTO-220F-1TO-220F-3TO-220F1TO-220FPTO-220FP-3TO-220FPAB-3TO-247TO-247-3TO-247-3LTO-247AC-3TO-251TO-251(IPAK)TO-252TO-252(DPAK)TO-252-2TO-252-2(DPAK)TO-252-2LTO-252-3TO-252-4TO-261-4TO-263TO-263-2TO-263-6TO-263-7LTO-3PFTO-3PF-3TO-92TO-92-2.5mmTO-92-3TO-92LTO-92L-3TOLLTSOT-26TSSOP-8U-DFN2020-6U-DFN2020-6BU-DFN2020-6DUDFN2020-6-EPV-DFN3030-8KV-DFN3333-8VDFN-8-PowerX1-DFN1006-3X1-DFN1212-3X1-DFN1411-3X2-DFN1006-3X2-DFN1310-6X2-DFN2015-3X2-DSN1006-3XFDFN-3(0.6x0.8)
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7N70G-TC-TN3-R

7N70G-TC-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model7N70G-TC-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 700V threshold voltage (Vgs (th) @ Id) - current 7A power (Pd) 57W channel N conduction resistance (RDS (on) @ Vgs, Id) ≤ 1.7 Ω @ VGS=10V, ID=3.5A package TO-252 MOSFET brand UTC (Youshun) 7N70G-TC-TN3-R series 7N70G
  • PDF 7N70G-TC-TN3-R.pdf
Consultation
50N06L-TA3-T

50N06L-TA3-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model50N06L-TA3-T
  • PackageTO-220
  • ManufacturerUTC
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 50A Power (Pd) 120W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 23m Ω @ 10V, 25A Package TO-220 MOSFET Brand UTC (Youshun) 50N06L-TA3-T Series 50N06L
  • PDF 50N06L-TA3-T.pdf
Consultation
12N80L-T47-T

12N80L-T47-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model12N80L-T47-T
  • PackageTO-247
  • ManufacturerUTC
  • DescriptionVoltage withstand 800V threshold voltage (Vgs (th) @ Id) 5V@250uA Current 12A Power (Pd) 360W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1 Ω @ 10V, 6A Package TO-247 MOSFET Brand UTC (Youshun) 12N80L-T47-T Series 12N80L
  • PDF 12N80L-T47-T.pdf
Consultation
12N70L-TF1-T

12N70L-TF1-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model12N70L-TF1-T
  • PackageTO-220F
  • ManufacturerUTC
  • DescriptionVoltage withstand 700V threshold voltage (Vgs (th) @ Id) - current 12A power (Pd) 36W channel N conduction resistance (RDS (on) @ Vgs, Id) 0.9 Ω @ VGS=10V, ID=6.0A package TO-220F MOSFET brand UTC (Youshun) 12N70L-TF1-T series 12N70L
  • PDF 12N70L-TF1-T.pdf
Consultation
2N65G-TM3-T

2N65G-TM3-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model2N65G-TM3-T
  • PackageTO-251
  • ManufacturerUTC
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) current 2A power (Pd) 45W channel N conduction resistance (RDS (on) @ Vgs, Id) ≤ 5.5 Ω @ VGS=10V, ID=1.0A package TO-251 MOSFET brand UTC (Youshun) 2N65G-TM3-T series 2N65G
  • PDF 2N65G-TM3-T.pdf
Consultation
4N60KG-TM3-T

4N60KG-TM3-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model4N60KG-TM3-T
  • PackageTO-251
  • ManufacturerUTC
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) - current 4A power (Pd) 50W channel N conduction resistance (RDS (on) @ Vgs, Id) 2.5 Ω @ VGS=10 V package TO-251 MOSFET brand UTC (Youshun) 4N60KG-TM3-T series 4N60KG
  • PDF 4N60KG-TM3-T.pdf
Consultation
UTD408L-TN3-R

UTD408L-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • ModelUTD408L-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 18A Power (Pd) 2.5W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 18m Ω @ 10V, 18A Package TO-251 MOSFET Brand UTC (Youshun) UTD408L-TN3-R Series UTD408L
  • PDF UTD408L-TN3-R.pdf
Consultation
7N65L-TQ2-R

7N65L-TQ2-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model7N65L-TQ2-R
  • PackageTO-263
  • ManufacturerUTC
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 7.4A Power (Pd) 142W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 900m Ω @ 10V, 3.7A Package TO-263 MOSFET Brand UTC (Youshun) 7N65L-TQ2-R Series 7N65L
  • PDF 7N65L-TQ2-R.pdf
Consultation
4N65L-Q-TMS-T

4N65L-Q-TMS-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model4N65L-Q-TMS-T
  • PackageTO-251
  • ManufacturerUTC
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) - current 4A power (Pd) 50W channel N conduction resistance (RDS (on) @ Vgs, Id) 3.1 Ω @ VGS=10V, ID=2.2A package TO-251 MOSFET brand UTC (Youshun) 4N65L-Q-TMS-T series 4N65L
  • PDF 4N65L-Q-TMS-T.pdf
Consultation
12N65L-TF1-T

12N65L-TF1-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model12N65L-TF1-T
  • PackageTO-220F
  • ManufacturerUTC
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) - current 12A power (Pd) 51W channel N conduction resistance (RDS (on) @ Vgs, Id) 0.85 Ω @ VGS=10V, ID=6.0A package TO-220F1 MOSFET brand UTC (Youshun) 12N65L-TF1-T series 12N65L
  • PDF 12N65L-TF1-T.pdf
Consultation
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