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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
DMN3404L-7

DMN3404L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3404L-7
  • Package
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 5.8A Power (Pd) 720mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 28m Ω @ 10V, 5.8A Package SOT-23 MOSFET Brand DIODES DMN3404L-7 Series DMN3404L
  • PDF DMN3404L-7.pdf
Consultation
DMP1045U-7

DMP1045U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP1045U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4A Power (Pd) 800mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 31m Ω @ 4.5V, 4A Package SOT-23 MOSFET Brand DIODES (American) DMP1045U-7 Series DMP1045U
  • PDF DMP1045U-7.pdf
Consultation
DMG2305UX-13

DMG2305UX-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG2305UX-13
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 52m Ω @ 4.5V, 4.2A Package SOT-23 MOSFET Brand DIODES (American) DMG2305UX-13 Series DMG2305UX
  • PDF DMG2305UX-13.pdf
Consultation
DMG2305UX-7

DMG2305UX-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG2305UX-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 52m Ω @ 4.5V, 4.2A Package SOT-23 MOSFET Brand DIODES (American) DMG2305UX-7 Series DMG2305UX
  • PDF DMG2305UX-7.pdf
Consultation
DMP3098L-7

DMP3098L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3098L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 3.8A Power (Pd) 1.08W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 70m Ω @ 10V, 3.8A Package SOT-23 MOSFET Brand DIODES (American) DMP3098L-7 Series DMP3098L
  • PDF DMP3098L-7.pdf
Consultation
DMP4051LK3-13

DMP4051LK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4051LK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 7.2A Power (Pd) 2.14W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 51m Ω @ 10V, 12A Package TO-252 MOSFET Brand DIODES (Meitai) DMP4051LK3-13 Series DMP4051LK3
  • PDF DMP4051LK3-13.pdf
Consultation
2N7002KQ-7

2N7002KQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002KQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@1mA Current 380mA Power (Pd) 370mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 10V, 500mA Package SOT-23 MOSFET Brand DIODES (Meitai) 2N7002KQ-7 Series 2N7002KQ-7
  • PDF 2N7002KQ-7.pdf
Consultation
DMP6023LE-13

DMP6023LE-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6023LE-13
  • PackageSOT-223-4
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current of 7A; 18.2A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 28m Ω @ 10V, 5A Package SOT-223-4 MOSFET Brand DIODES DMP6023LE-13 Series DMP6023LE
  • PDF DMP6023LE-13.pdf
Consultation
DMP3013SFV-7

DMP3013SFV-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3013SFV-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 12A; 35A power (Pd) 940mW channel P conduction resistance (RDS (on) @ Vgs, Id) 9.5m Ω @ 10V, 11.5A package PowerDI3333-8 MOSFET brand DIODES (American) DMP3013SFV-7 series DMP3013SFV
  • PDF DMP3013SFV-7.pdf
Consultation
DMG1012UW-7

DMG1012UW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1012UW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1A Power (Pd) 290mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 450m Ω @ 4.5V, 600mA Package SOT-323 Field Effect Transistor (MOSFET) Brand DIODES (Meitai) DMG1012UW-7 Series DMG1012UW
  • PDF DMG1012UW-7.pdf
Consultation
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