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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
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MICRONEUTCDIODES华润华晶CHIPLINKNCESTTI
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Package：
D2PAKDFN(5x6)DFN-12(4.5x5)DFN-3(0.6x0.8)DFN-3(0.6x1)DFN-3(1.5x2)DFN-6(0.6x0.8)DFN-6(2x2)DFN-6-EP(2x2)DFN-6L(2x2)DFN-8(3.1x3.2)DFN-8(3.3x3.3)DFN-8(3x3)DFN-8(4.9x5.7)DFN-8(4.9x5.8)DFN-8(5.1x6)DFN-8(5.7x5.1)DFN-8(5.8x4.9)DFN-8(5x6)DFN-8L(3.3x3.3)DFN-8L(3x3)DFN-8L(5x6)DFN2020-6DFN2x2-6LDMN3032LFDB-7DPAKESOP-8FDFN-8L(5x6)H2PAK-2ISOTOPPDFN-8(3.1x3.1)PDFN-8(3.1x3.2)PDFN-8(3.3x3.3)PDFN-8(4.9x5.8)PDFN-8(5.1x5.8)PDFN-8(5.2x6.2)PDFN-8(5.8x4.9)PDFN-8(5x5)PDFN-8(5x5.8)PDFN3333-8Power-DI-5060-8PowerDI-3333-8PowerDI-5060-8PowerDI-8(5x6)PowerDI1012-8PowerDI3333-8PowerDI5060-8PowerFLAT(3.3x3.3)PowerFLAT-5x6PowerFLAT-5x6-8PowerFlat-8PowerFLAT-8(3.3x3.3)PowerFLAT-8(5x6)PowerVDFN-8SC-59SC-70-3SMDSO-8SOD-323SOIC-8SOP-8SOP-8-4.0mmSOT-223SOT-223-2SOT-223-3SOT-223-3LSOT-223-4SOT-23SOT-23-3SOT-23-3LSOT-23-6SOT-23-6LSOT-23FSOT-26SOT-323SOT-363SOT-363-6SOT-523SOT-523-3SOT-563SOT-89SOT-89-3SOT-89-3LSOT-963SOT-963-6TDFN-8-PowerTO-220TO-220-3TO-220-3LTO-220AB-3TO-220FTO-220F-1TO-220F-3TO-220F1TO-220FPTO-220FP-3TO-220FPAB-3TO-247TO-247-3TO-247-3LTO-247AC-3TO-251TO-251(IPAK)TO-252TO-252(DPAK)TO-252-2TO-252-2(DPAK)TO-252-2LTO-252-3TO-252-4TO-261-4TO-263TO-263-2TO-263-6TO-263-7LTO-3PFTO-3PF-3TO-92TO-92-2.5mmTO-92-3TO-92LTO-92L-3TOLLTSOT-26TSSOP-8U-DFN2020-6U-DFN2020-6BU-DFN2020-6DUDFN2020-6-EPV-DFN3030-8KV-DFN3333-8VDFN-8-PowerX1-DFN1006-3X1-DFN1212-3X1-DFN1411-3X2-DFN1006-3X2-DFN1310-6X2-DFN2015-3X2-DSN1006-3XFDFN-3(0.6x0.8)
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3N90L-TN3-R

3N90L-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model3N90L-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 900V threshold voltage (Vgs (th) @ Id) - current 3A power (Pd) 90W channel N conduction resistance (RDS (on) @ Vgs, Id) ≤ 3.5 Ω @ VGS=10V, ID=1.5A package TO-252 MOSFET brand UTC (Youshun) 3N90L-TN3-R series 3N90L
  • PDF 3N90L-TN3-R.pdf
Consultation
UT3400G-AE3-R

UT3400G-AE3-R-UTC

  • TypeField effect transistor (MOSFET)
  • ModelUT3400G-AE3-R
  • PackageSOT-23
  • ManufacturerUTC
  • DescriptionWithstand voltage 30V threshold voltage (Vgs (th) @ Id) - current 5.8A power (Pd) 1.4W channel N conduction resistance (RDS (on) @ Vgs, Id) 28 m Ω @ VGS=10V, ID=5.8A 33 m Ω @ VGS=4.5V, ID=5.0A 52 m Ω @ VGS=2.5V, ID=4.0A package TO-252 MOSFET brand UTC (Youshun) UT3400G-AE3-R series UT3400G
  • PDF UT3400G-AE3-R.pdf
Consultation
30N06-TN3-R

30N06-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model30N06-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 30A Power (Pd) 46W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 40m Ω @ 10V, 15A Package TO-252 MOSFET Brand UTC (Youshun) 30N06-TN3-R Series 30N06
  • PDF 30N06-TN3-R.pdf
Consultation
2N60G-CB-AA3-R

2N60G-CB-AA3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model2N60G-CB-AA3-R
  • PackageSOT-223
  • ManufacturerUTC
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 2A Power (Pd) 44W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 1A Package SOT-223 MOSFET Brand UTC (Youshun) 2N60G-CB-AA3-R Series 2N60G
  • PDF 2N60G-CB-AA3-R.pdf
Consultation
7N65KL-TN3-R

7N65KL-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model7N65KL-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 7A Power (Pd) 55W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1.6 Ω @ 10V, 3.5A Package TO-252 MOSFET Brand UTC (Youshun) 7N65KL-TN3-R Series 7N65
  • PDF 7N65KL-TN3-R.pdf
Consultation
4N90CL-TF3-T

4N90CL-TF3-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model4N90CL-TF3-T
  • PackageTO-220F
  • ManufacturerUTC
  • DescriptionVoltage withstand 900V threshold voltage (Vgs (th) @ Id) - current 4.0A power (Pd) 28W channel N conduction resistance (RDS (on) @ Vgs, Id) 4.5 Ω @ VGS=10V, ID=2.0A package SOT-223 MOSFET brand UTC (Youshun) 4N90CL-TF3-T series 4N90CL
  • PDF 4N90CL-TF3-T.pdf
Consultation
UT8205AG-P08-R

UT8205AG-P08-R-UTC

  • TypeField effect transistor (MOSFET)
  • ModelUT8205AG-P08-R
  • PackageTSSOP-8
  • ManufacturerUTC
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 6A Power (Pd) 1.5W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 28m Ω @ 4.5V, 6A Package TSSOP-8 MOSFET Brand UTC (Youshun) UT8205AG-P08-R Series UT8205AG
  • PDF UT8205AG-P08-R.pdf
Consultation
7N65L-TN3-R

7N65L-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model7N65L-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) - current 7A power (Pd) 48W channel N conduction resistance (RDS (on) @ Vgs, Id) 1.3 Ω @ VGS=10V, ID=3.5A package TO-252 MOSFET brand UTC (Youshun) 7N65L-TN3-R series 7N65L
  • PDF 7N65L-TN3-R.pdf
Consultation
2N60G-LC1-AA3-R

2N60G-LC1-AA3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model2N60G-LC1-AA3-R
  • PackageSOT-223
  • ManufacturerUTC
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) - current 2A power (Pd) 2.3W channel N conduction resistance (RDS (on) @ Vgs, Id) ≤ 5.0 Ω @ VGS=10V, ID=1.0A packaged SOT-223 MOSFET brand UTC (Youshun) 2N60G-LC1-AA3-R series 2N60G
  • PDF 2N60G-LC1-AA3-R.pdf
Consultation
4N60G-TN3-R

4N60G-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model4N60G-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) - current 4A power (Pd) 50W channel N conduction resistance (RDS (on) @ Vgs, Id) 2.5 Ω @ VGS=10 V, ID=2.2A package TO-252 MOSFET brand UTC (Youshun) 4N60G-TN3-R series 4N60G
  • PDF 4N60G-TN3-R.pdf
Consultation
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