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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
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Package：
D2PAKDFN(5x6)DFN-12(4.5x5)DFN-3(0.6x0.8)DFN-3(0.6x1)DFN-3(1.5x2)DFN-6(0.6x0.8)DFN-6(2x2)DFN-6-EP(2x2)DFN-6L(2x2)DFN-8(3.1x3.2)DFN-8(3.3x3.3)DFN-8(3x3)DFN-8(4.9x5.7)DFN-8(4.9x5.8)DFN-8(5.1x6)DFN-8(5.7x5.1)DFN-8(5.8x4.9)DFN-8(5x6)DFN-8L(3.3x3.3)DFN-8L(3x3)DFN-8L(5x6)DFN2020-6DFN2x2-6LDMN3032LFDB-7DPAKESOP-8FDFN-8L(5x6)H2PAK-2ISOTOPPDFN-8(3.1x3.1)PDFN-8(3.1x3.2)PDFN-8(3.3x3.3)PDFN-8(4.9x5.8)PDFN-8(5.1x5.8)PDFN-8(5.2x6.2)PDFN-8(5.8x4.9)PDFN-8(5x5)PDFN-8(5x5.8)PDFN3333-8Power-DI-5060-8PowerDI-3333-8PowerDI-5060-8PowerDI-8(5x6)PowerDI1012-8PowerDI3333-8PowerDI5060-8PowerFLAT(3.3x3.3)PowerFLAT-5x6PowerFLAT-5x6-8PowerFlat-8PowerFLAT-8(3.3x3.3)PowerFLAT-8(5x6)PowerVDFN-8SC-59SC-70-3SMDSO-8SOD-323SOIC-8SOP-8SOP-8-4.0mmSOT-223SOT-223-2SOT-223-3SOT-223-3LSOT-223-4SOT-23SOT-23-3SOT-23-3LSOT-23-6SOT-23-6LSOT-23FSOT-26SOT-323SOT-363SOT-363-6SOT-523SOT-523-3SOT-563SOT-89SOT-89-3SOT-89-3LSOT-963SOT-963-6TDFN-8-PowerTO-220TO-220-3TO-220-3LTO-220AB-3TO-220FTO-220F-1TO-220F-3TO-220F1TO-220FPTO-220FP-3TO-220FPAB-3TO-247TO-247-3TO-247-3LTO-247AC-3TO-251TO-251(IPAK)TO-252TO-252(DPAK)TO-252-2TO-252-2(DPAK)TO-252-2LTO-252-3TO-252-4TO-261-4TO-263TO-263-2TO-263-6TO-263-7LTO-3PFTO-3PF-3TO-92TO-92-2.5mmTO-92-3TO-92LTO-92L-3TOLLTSOT-26TSSOP-8U-DFN2020-6U-DFN2020-6BU-DFN2020-6DUDFN2020-6-EPV-DFN3030-8KV-DFN3333-8VDFN-8-PowerX1-DFN1006-3X1-DFN1212-3X1-DFN1411-3X2-DFN1006-3X2-DFN1310-6X2-DFN2015-3X2-DSN1006-3XFDFN-3(0.6x0.8)
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4N65L-TA3-T

4N65L-TA3-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model4N65L-TA3-T
  • PackageTO-220
  • ManufacturerUTC
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 4A Power (Pd) 50W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2.5 Ω @ 10V, 2.2A Package TO-220 MOSFET Brand UTC (Youshun) 4N65L-TA3-T Series 4N65L
  • PDF 4N65L-TA3-T.pdf
Consultation
UT2305G-AE3-R

UT2305G-AE3-R-UTC

  • TypeField effect transistor (MOSFET)
  • ModelUT2305G-AE3-R
  • PackageSOT-23-3L
  • ManufacturerUTC
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 4.2A Power (Pd) 1.38W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 53m Ω @ 10V, 4.5A Package SOT-23-3L MOSFET Brand UTC (Youshun) UT2305G-AE3-R Series UT2305G
  • PDF UT2305G-AE3-R.pdf
Consultation
UT2305G-AE2-R

UT2305G-AE2-R-UTC

  • TypeField effect transistor (MOSFET)
  • ModelUT2305G-AE2-R
  • PackageSOT-23-3
  • ManufacturerUTC
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 4.2A Power (Pd) 830mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 65m Ω @ 4.5V, 4.2A Package SOT-23-3 MOSFET Brand UTC (Youshun) UT2305G-AE2-R Series UT2305G
  • PDF UT2305G-AE2-R.pdf
Consultation
UF630G-TN3-R

UF630G-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • ModelUF630G-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 200V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 9A Power (Pd) 46W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 400m Ω @ 10V, 5A Package TO-252 MOSFET Brand UTC (Youshun) UF630G-TN3-R Series UF630G
  • PDF UF630G-TN3-R.pdf
Consultation
4N120L-TA3-T

4N120L-TA3-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model4N120L-TA3-T
  • PackageTO-220
  • ManufacturerUTC
  • DescriptionVoltage withstand 1200V threshold voltage (Vgs (th) @ Id) - current 4A power (Pd) 140W channel N conduction resistance (RDS (on) @ Vgs, Id) 4.0 Ω @ VGS=10V, ID=2.0A package TO-220 field-effect transistor (MOSFET) brand UTC (Youshun) 4N120L-TA3-T series 4N120L
  • PDF 4N120L-TA3-T.pdf
Consultation
UF630L-TA3-T

UF630L-TA3-T-UTC

  • TypeField effect transistor (MOSFET)
  • ModelUF630L-TA3-T
  • PackageTO-220
  • ManufacturerUTC
  • DescriptionVoltage withstand 200V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 9A Power (Pd) 73W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 400m Ω @ 10V, 5A Package TO-220 MOSFET Brand UTC (Youshun) UF630L-TA3-T Series UF630L
  • PDF UF630L-TA3-T.pdf
Consultation
7NM65G-TN3-R

7NM65G-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model7NM65G-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 650V threshold voltage (Vgs (th) @ Id) 4.5V@250uA Current 7A Power (Pd) 60W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 900m Ω @ 10V, 3.5A Package TO-252 MOSFET Brand UTC (Youshun) 7NM65G-TN3-R Series 7NM65G
  • PDF 7NM65G-TN3-R.pdf
Consultation
2N60L-TN3-R

2N60L-TN3-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model2N60L-TN3-R
  • PackageTO-252
  • ManufacturerUTC
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 2A Power (Pd) 44W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 1A Package TO-252 MOSFET Brand UTC (Youshun) 2N60L-TN3-R Series 2N60L
  • PDF 2N60L-TN3-R.pdf
Consultation
2N60L-TM3-T

2N60L-TM3-T-UTC

  • TypeField effect transistor (MOSFET)
  • Model2N60L-TM3-T
  • PackageTO-251
  • ManufacturerUTC
  • DescriptionVoltage withstand 600V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 2A Power (Pd) 44W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 1A Package TO-251 MOSFET Brand UTC (Youshun) 2N60L-TM3-T Series 2N60L
  • PDF 2N60L-TM3-T.pdf
Consultation
3N90L-TQ2-R

3N90L-TQ2-R-UTC

  • TypeField effect transistor (MOSFET)
  • Model3N90L-TQ2-R
  • PackageTO-263
  • ManufacturerUTC
  • DescriptionVoltage withstand 900V threshold voltage (Vgs (th) @ Id) - current 3A power (Pd) 90W channel N conduction resistance (RDS (on) @ Vgs, Id) ≤ 3.5 Ω @ VGS=10V, ID=1.5A package TO-263 MOSFET brand UTC (Youshun) 3N90L-TQ2-R series 3N90L
  • PDF 3N90L-TQ2-R.pdf
Consultation
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