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DIODES(美台)

DIODES(美台)

DMC6040SSD-13

DMC6040SSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC6040SSD-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 5.1A; 3.1A power (Pd) 1.24W channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 40m Ω @ 8A, 10V package SOP-8 field-effect transistor (MOSFET) brand DIODES (American) DMC6040SSD-13 series DMC6040SSD
  • PDF DMC6040SSD-13.pdf
Consultation
DMN2058U-7

DMN2058U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2058U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 4.6A Power (Pd) 1.13W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 35m Ω @ 10V, 6A Package SOT-23 MOSFET Brand DIODES (American) DMN2058U-7 Series DMN2058U
  • PDF DMN2058U-7.pdf
Consultation
BSS123Q-7

BSS123Q-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS123Q-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 170mA Power (Pd) 300mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 6 Ω @ 10V, 170mA Package SOT-23 Field Effect Transistor (MOSFET) Brand DIODES (American) BSS123Q-7 Series BSS123Q
  • PDF BSS123Q-7.pdf
Consultation
DMTH6016LPSQ-13

DMTH6016LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH6016LPSQ-13
  • PackagePowerDI-5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 9.8A; 37A power (Pd) 37.5W; 2.6W channel N conduction resistance (RDS (on) @ Vgs, Id) 16m Ω @ 20A, 10V package PowerDI-5060-8 MOSFET brand DIODES (Meitai) DMTH6016LPSQ-13 series DMTH6016LPSQ
  • PDF DMTH6016LPSQ-13.pdf
Consultation
DMP2004K-7

DMP2004K-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2004K-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 600mA Power (Pd) 550mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 900m Ω @ 4.5V, 430mA Package SOT-23 MOSFET Brand DIODES (American) DMP2004K-7 Series DMP2004K
  • PDF DMP2004K-7.pdf
Consultation
DMP6023LFGQ-13

DMP6023LFGQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6023LFGQ-13
  • PackagePowerDI-3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 7.7A Power (Pd) 1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 5A, 10V Package PowerDI-3333-8 MOSFET Brand DIODES (USA) DMP6023LFGQ-13 Series DMP6023LFGQ
  • PDF DMP6023LFGQ-13.pdf
Consultation
DMG2301LK-7

DMG2301LK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG2301LK-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.4A Power (Pd) 840mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 160m Ω @ 4.5V, 1A Package SOT-23 MOSFET Brand DIODES (Meitai) DMG2301LK-7 Series DMG2301LK
  • PDF DMG2301LK-7.pdf
Consultation
DMP4025LSD-13

DMP4025LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4025LSD-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 1.8V@250uA Current 6.9A, power (Pd) 1.8W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 3A package SOP-8 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP4025LSD-13 series DMP4025LSD
  • PDF DMP4025LSD-13.pdf
Consultation
ZXMP10A17E6TA

ZXMP10A17E6TA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP10A17E6TA
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 1.3A Power (Pd) 1.1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 350m Ω @ 10V, 1.4A Package SOT-26 MOSFET Brand DIODES (Meitai) ZXMP10A17E6TA Series ZXMP10A17E6TA
  • PDF ZXMP10A17E6TA.pdf
Consultation
DMP6018LPSQ-13

DMP6018LPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6018LPSQ-13
  • PackagePowerDI5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 60A, power (Pd) 113W; 2.6W channel P conduction resistance (RDS (on) @ Vgs, Id) 18m Ω @ 17A, 10V package PowerDI5060-8 MOSFET brand DIODES (Meitai) DMP6018LPSQ-13 series DMP6018LPSQ
  • PDF DMP6018LPSQ-13.pdf
Consultation
DMP3056LDM-7

DMP3056LDM-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3056LDM-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 4.3A Power (Pd) 1.25W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 45m Ω @ 10V, 5A Package SOT-26 MOSFET Brand DIODES (American) DMP3056LDM-7 Series DMP3056LDM
  • PDF DMP3056LDM-7.pdf
Consultation
2N7002H-7

2N7002H-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002H-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 170mA Power (Pd) 370mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 7.5 Ω @ 5V, 50mA Package SOT-23 MOSFET Brand DIODES (USA) 2N7002H-7 Series 2N7002H
  • PDF 2N7002H-7.pdf
Consultation
DMT6016LSS-13

DMT6016LSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT6016LSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 9.2A power (Pd) 1.5W channel N conduction resistance (RDS (on) @ Vgs, Id) 18m Ω @ 10V, 10A package SOP-8 field-effect transistor (MOSFET) brand DIODES (American) DMT6016LSS-13 series DMT6016LSS
  • PDF DMT6016LSS-13.pdf
Consultation
ZXMP6A13FTA

ZXMP6A13FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP6A13FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 900mA Power (Pd) 625mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 400m Ω @ 10V, 900mA Package SOT-23 MOSFET Brand DIODES (USA) ZXMP6A13FTA Series ZXMP6A13FTA
  • PDF ZXMP6A13FTA.pdf
Consultation
BSS123WQ-7-F

BSS123WQ-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS123WQ-7-F
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 170mA Power (Pd) 200mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 6 Ω @ 10V, 170mA Package SOT-323 MOSFET Brand DIODES (American) BSS123WQ-7-F Series BSS123WQ
  • PDF BSS123WQ-7-F.pdf
Consultation
DMG6601LVT-7

DMG6601LVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6601LVT-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 3.8A; 2.5A power (Pd) 850mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 55m Ω @ 3.4A, 10V package SOT-26 field-effect transistor (MOSFET) brand DIODES (American) DMG6601LVT-7 series DMG6601LVT
  • PDF DMG6601LVT-7.pdf
Consultation
DMN2230U-7

DMN2230U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2230U-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2A Power (Pd) 600mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 110m Ω @ 4.5V, 2.5A Package SOT-23-3 MOSFET Brand DIODES (USA) DMN2230U-7 Series DMN2230U
  • PDF DMN2230U-7.pdf
Consultation
DMN2300UFB4-7B

DMN2300UFB4-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2300UFB4-7B
  • PackageDFN-3(0.6x1)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 950mV@250uA Current 1.3A Power (Pd) 500mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 175m Ω @ 4.5V, 300mA Package DFN-3 (0.6x1) MOSFET Brand DIODES DMN2300UFB4-7B Series DMN2300UFB4
  • PDF DMN2300UFB4-7B.pdf
Consultation
DMT8012LK3-13

DMT8012LK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT8012LK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 80V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 44A Power (Pd) 2.7W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 17m Ω @ 10V, 12A Package TO-252 MOSFET Brand DIODES (Meitai) DMT8012LK3-13 Series DMT8012LK3
  • PDF DMT8012LK3-13.pdf
Consultation
DMNH6021SK3Q-13

DMNH6021SK3Q-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMNH6021SK3Q-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 50A Power (Pd) 2.1W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 23m Ω @ 10V, 12A Package TO-252 MOSFET Brand DIODES (American) DMNH6021SK3Q-13 Series DMNH6021SK3Q
  • PDF DMNH6021SK3Q-13.pdf
Consultation
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