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DIODES(美台)

DIODES(美台)

DMPH6050SK3Q-13

DMPH6050SK3Q-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMPH6050SK3Q-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 7.2A; 23.6A power (Pd) 1.9W channel P conduction resistance (RDS (on) @ Vgs, Id) 50m Ω @ 10V, 7A package TO-252 field-effect transistor (MOSFET) brand DIODES (Meitai) DMPH6050SK3Q-13 series DMPH6050SK3Q
  • PDF DMPH6050SK3Q-13.pdf
Consultation
DMP2240UDM-7

DMP2240UDM-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2240UDM-7
  • PackageSOT-26
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2A, power (Pd) 600mW, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 150m Ω @ 4.5V, 2A package SOT-26 field-effect transistor (MOSFET) brand DIODES (American) DMP2240UDM-7 series DMP2240UDM
  • PDF DMP2240UDM-7.pdf
Consultation
DMN2058UW-7

DMN2058UW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2058UW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.2V@250uA Current 3.5A Power (Pd) 500mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 42m Ω @ 3A, 10V Package SOT-323 MOSFET Brand DIODES DMN2058UW-7 Series DMN2058UW
  • PDF DMN2058UW-7.pdf
Consultation
DMG3415UFY4Q-7

DMG3415UFY4Q-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3415UFY4Q-7
  • PackageDFN-3(1.5x2)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 16V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.5A Power (Pd) 650mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 39m Ω @ 4A, 4.5V Package DFN-3 (1.5x2) MOSFET Brand DIODES DMG3415UFY4Q-7 Series DMG3415UFY4Q
  • PDF DMG3415UFY4Q-7.pdf
Consultation
DMP3125L-7

DMP3125L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3125L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.1V@250uA Current 2.5A Power (Pd) 650mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 95m Ω @ 10V, 3.8A Package SOT-23 MOSFET Brand DIODES DMP3125L-7 Series DMP3125L
  • PDF DMP3125L-7.pdf
Consultation
DMP6110SSD-13

DMP6110SSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6110SSD-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 3.3A, power (Pd) 1.2W, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 105m Ω @ 10V, 4.5A package SOP-8 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP6110SSD-13 series DMP6110SSD
  • PDF DMP6110SSD-13.pdf
Consultation
DMP4015SPSQ-13

DMP4015SPSQ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4015SPSQ-13
  • PackagePowerDI5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 8.5A Power (Pd) 1.3W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 11m Ω @ 10V, 9.8A Package PowerDI5060-8 MOSFET Brand DIODES (USA) DMP4015SPSQ-13 Series DMP4015SPSQ
  • PDF DMP4015SPSQ-13.pdf
Consultation
DMP2160UW-7

DMP2160UW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2160UW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 1.5A Power (Pd) 350mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 100m Ω @ 4.5V, 1.5A Package SOT-323 MOSFET Brand DIODES (Meitai) DMP2160UW-7 Series DMP2160UW
  • PDF DMP2160UW-7.pdf
Consultation
DMG1024UV-7

DMG1024UV-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1024UV-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.38A, power (Pd) 530mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 450m Ω @ 600mA, 4.5V package SOT-563 MOSFET brand DIODES (USA) DMG1024UV-7 series DMG1024UV
  • PDF DMG1024UV-7.pdf
Consultation
DMG3414U-7

DMG3414U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3414U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 780mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 4.5V, 8.2A Package SOT-23 MOSFET Brand DIODES DMG3414U-7 Series DMG3414U
  • PDF DMG3414U-7.pdf
Consultation
DMP4065SQ-7

DMP4065SQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4065SQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2.4A Power (Pd) 720mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 80m Ω @ 4.2A, 10V Package SOT-23 MOSFET Brand DIODES (American) DMP4065SQ-7 Series DMP4065SQ
  • PDF DMP4065SQ-7.pdf
Consultation
ZXM61P03FTA

ZXM61P03FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXM61P03FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.1A Power (Pd) 625mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 350m Ω @ 10V, 600mA Package SOT-23 MOSFET Brand DIODES (USA) ZXM61P03FTA Series ZXM61P03FTA
  • PDF ZXM61P03FTA.pdf
Consultation
DMN63D8LW-13

DMN63D8LW-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN63D8LW-13
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 380mA Power (Pd) 300mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2.8 Ω @ 10V, 250mA Package SOT-323 MOSFET Brand DIODES DMN63D8LW-13 Series DMN63D8LW
  • PDF DMN63D8LW-13.pdf
Consultation
DMN5L06K-7

DMN5L06K-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN5L06K-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 300mA Power (Pd) 350mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 5V, 50mA Package SOT-23 MOSFET Brand DIODES (American) DMN5L06K-7 Series DMN5L06K
  • PDF DMN5L06K-7.pdf
Consultation
DMTH8003SPS-13

DMTH8003SPS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH8003SPS-13
  • PackagePowerDI5060-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 80V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 100A Power (Pd) 2.9W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3.9m Ω @ 10V, 30A Package PowerDI5060-8 MOSFET Brand DIODES (Meitai) DMTH8003SSP-13 Series DMTH8003SPS
  • PDF DMTH8003SPS-13.pdf
Consultation
BSS138Q-7-F

BSS138Q-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS138Q-7-F
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 200mA Power (Pd) 300mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3.5 Ω @ 10V, 220mA Package SOT-23 MOSFET Brand DIODES (American) BSS138Q-7-F Series BSS138Q
  • PDF BSS138Q-7-F.pdf
Consultation
DMP4015SSS-13

DMP4015SSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4015SSS-13
  • PackageSO-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 9.1A Power (Pd) 1.45W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 11m Ω @ 10V, 9.8A Package SO-8 MOSFET Brand DIODES DMP4015SSS-13 Series DMP4015SSS
  • PDF DMP4015SSS-13.pdf
Consultation
ZXMP10A13FQTA

ZXMP10A13FQTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP10A13FQTA
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 600mA Power (Pd) 625mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 1 Ω @ 600mA, 10V Package SOT-23-3 MOSFET Brand DIODES (Meitai) ZXMP10A13FQTA Series ZXMP10A13FQTA
  • PDF ZXMP10A13FQTA.pdf
Consultation
DMC2400UV-13

DMC2400UV-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC2400UV-13
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 1.03A; 700mA power (Pd) 450mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 350m Ω @ 4.5V, 200mA; 700m Ω @ 4.5V, 100mA package SOT-563 MOSFET brand DIODES (Meitai) DMC2400UV-13 series DMC2400UV
  • PDF DMC2400UV-13.pdf
Consultation
DMC2004DWK-7

DMC2004DWK-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMC2004DWK-7
  • PackageSOT-363-6
  • ManufacturerDIODES(美台)
  • DescriptionManufacturer DIODES (Taiwan) Product Classification MOSFET Series DMC2004DWK Installation Type SMT Package/Housing SOT-363-6 Threshold Voltage (Vgs (th) @ Id) 1V@250uA Current 540mA; 430mA power (Pd) 250mW withstand voltage 20V conduction resistance (RDS (on) @ Vgs, Id) 400m Ω @ 4.5V, 540mA; 700m Ω @ 4.5V, 430mA channel 1 N and 1 P
  • PDF DMC2004DWK-7.pdf
Consultation
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