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DIODES(美台)

DIODES(美台)

DMP4015SK3Q-13

DMP4015SK3Q-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4015SK3Q-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 14A; 35A power (Pd) 3.5W channel P conduction resistance (RDS (on) @ Vgs, Id) 11m Ω @ 10V, 9.8A package TO-252 field-effect transistor (MOSFET) brand DIODES (American) DMP4015SK3Q-13 series DMP4015SK3Q
  • PDF DMP4015SK3Q-13.pdf
Consultation
DMG1013T-7

DMG1013T-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1013T-7
  • PackageSOT-523
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 460mA Power (Pd) 270mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 700m Ω @ 4.5V, 350mA Package SOT-523 MOSFET Brand DIODES (Meitai) DMG1013T-7 Series DMG1013T
  • PDF DMG1013T-7.pdf
Consultation
DMN13H750S-7

DMN13H750S-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN13H750S-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 130V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 1A Power (Pd) 770mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 750m Ω @ 10V, 2A Package SOT-23 MOSFET Brand DIODES DMN13H750S-7 Series DMN13H750S
  • PDF DMN13H750S-7.pdf
Consultation
DMP2165UW-7

DMP2165UW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2165UW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.5A Power (Pd) 500mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 90m Ω @ 4.5V, 1.5A Package SOT-323 MOSFET Brand DIODES DMP2165UW-7 Series DMP2165UW
  • PDF DMP2165UW-7.pdf
Consultation
DMG6968U-7

DMG6968U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6968U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 6.5A Power (Pd) 1.3W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 4.5V, 6.5A Package SOT-23 MOSFET Brand DIODES (American) DMG6968U-7 Series DMG6968U
  • PDF DMG6968U-7.pdf
Consultation
BSS84DW-7-F

BSS84DW-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS84DW-7-F
  • PackageSOT-363-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 130mA, power (Pd) 300mW, channel 2 P-conducting resistors (RDS (on) @ Vgs, Id) 10 Ω @ 5V, 100mA package SOT-363-6 MOSFET brand DIODES (American) BSS84DW-7-F series BSS84DW
  • PDF BSS84DW-7-F.pdf
Consultation
DMN2005K-7

DMN2005K-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2005K-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@100uA Current 300mA Power (Pd) 350mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1.7 Ω @ 2.7V, 200mA Package SOT-23 MOSFET Brand DIODES (American) DMN2005K-7 Series DMN2005K
  • PDF DMN2005K-7.pdf
Consultation
ZXMP6A17GTA

ZXMP6A17GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP6A17GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 3A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 125m Ω @ 10V, 2.2A Package SOT-223 MOSFET Brand DIODES (USA) ZXMP6A17GTA Series ZXMP6A17GTA
  • PDF ZXMP6A17GTA.pdf
Consultation
ZVP3310FTA

ZVP3310FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVP3310FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 75mA Power (Pd) 330mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 20 Ω @ 10V, 150mA Package SOT-23 MOSFET Brand DIODES (USA) ZVP3310FTA Series ZVP3310FTA
  • PDF ZVP3310FTA.pdf
Consultation
DMG1013UW-7

DMG1013UW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1013UW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 820mA Power (Pd) 310mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 750m Ω @ 4.5V, 430mA Package SOT-323 MOSFET Brand DIODES (Meitai) DMG1013UW-7 Series DMG1013UW
  • PDF DMG1013UW-7.pdf
Consultation
DMP4047LFDE-7

DMP4047LFDE-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4047LFDE-7
  • PackageDFN-6(2x2)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 2.2V@250uA Current 3.3A Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 33m Ω @ 10V, 4.4A Package DFN-6 (2x2) MOSFET Brand DIODES DMP4047LFDE-7 Series DMP4047LFDE
  • PDF DMP4047LFDE-7.pdf
Consultation
DMP2022LSS-13

DMP2022LSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2022LSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.1V@250uA Current 10A power (Pd) 2.5W channel P conduction resistance (RDS (on) @ Vgs, Id) 13m Ω @ 10V, 10A package SOP-8 field-effect transistor (MOSFET) brand DIODES (American) DMP2022LSS-13 series DMP2022LSS
  • PDF DMP2022LSS-13.pdf
Consultation
DMHT6016LFJ-13

DMHT6016LFJ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMHT6016LFJ-13
  • PackageDFN-12(4.5x5)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 14.8A Power (Pd) 1.16W Channel 4 N Conducting Resistors (RDS (on) @ Vgs, Id) 22m Ω @ 10V, 10A Package DFN-12 (4.5x5) MOSFET Brand DIODES DMHT6016LFJ-13 Series DMHT6016LFJ
  • PDF DMHT6016LFJ-13.pdf
Consultation
DMP510DL-7

DMP510DL-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP510DL-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 180mA Power (Pd) 310mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 5V, 100mA Package SOT-23 MOSFET Brand DIODES DMP510DL-7 Series DMP510DL
  • PDF DMP510DL-7.pdf
Consultation
DMN63D8L-7

DMN63D8L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN63D8L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 350mA Power (Pd) 350mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2.8 Ω @ 10V, 250mA Package SOT-23 MOSFET Brand DIODES DMN63D8L-7 Series DMN63D8L
  • PDF DMN63D8L-7.pdf
Consultation
BS250P

BS250P-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBS250P
  • PackageTO-92L
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 45V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 230mA Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 14 Ω @ 10V, 200mA Package TO-92L Field Effect Transistor (MOSFET) Brand DIODES (USA) BS250P Series BS250P
  • PDF BS250P.pdf
Consultation
DMN6140L-7

DMN6140L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6140L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 1.6A Power (Pd) 700mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 140m Ω @ 10V, 1.8A Package SOT-23 MOSFET Brand DIODES DMN6140L-7 Series DMN6140L
  • PDF DMN6140L-7.pdf
Consultation
2N7002A-7

2N7002A-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002A-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 180mA Power (Pd) 370mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 6 Ω @ 5V, 115mA Package SOT-23 MOSFET Brand DIODES (USA) 2N7002A-7 Series 2N7002A
  • PDF 2N7002A-7.pdf
Consultation
DMN67D8L-7

DMN67D8L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN67D8L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 210mA Power (Pd) 340mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 500mA Package SOT-23 MOSFET Brand DIODES DMN67D8L-7 Series DMN67D8L
  • PDF DMN67D8L-7.pdf
Consultation
DMG6602SVT-7

DMG6602SVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6602SVT-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.3V@250uA Current 3.4A; 2.8A power (Pd) 840mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 60m Ω @ 3.1A, 10V package SOT-23-6 MOSFET brand DIODES (American) DMG6602SVT-7 series DMG6602SVT
  • PDF DMG6602SVT-7.pdf
Consultation
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