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DIODES(美台)

DIODES(美台)

BSS123TA

BSS123TA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS123TA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 170mA Power (Pd) 360mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 6 Ω @ 10V, 100mA Package SOT-23 MOSFET Brand DIODES (American) BSS123TA Series BSS123TA
  • PDF BSS123TA.pdf
Consultation
DMN61D9UW-7

DMN61D9UW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN61D9UW-7
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 340mA Power (Pd) 320mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 5V, 50mA Package SOT-323 MOSFET Brand DIODES (Meitai) DMN61D9UW-7 Series DMN61D9UW
  • PDF DMN61D9UW-7.pdf
Consultation
DMN2004K-7

DMN2004K-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2004K-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 630mA Power (Pd) 350mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 550m Ω @ 4.5V, 540mA Package SOT-23 MOSFET Brand DIODES (American) DMN2004K-7 Series DMN2004K
  • PDF DMN2004K-7.pdf
Consultation
DMP4013LFG-7

DMP4013LFG-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4013LFG-7
  • PackagePowerDI3333-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 10.3A Power (Pd) 1W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 13m Ω @ 10V, 10A Package PowerDI3333-8 MOSFET Brand DIODES (Meitai) DMP4013LFG-7 Series DMP4013LFG
  • PDF DMP4013LFG-7.pdf
Consultation
DMN53D0LDW-13

DMN53D0LDW-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN53D0LDW-13
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 360mA, power (Pd) 310mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 1.6 Ω @ 500mA, 10V package SOT-363 MOSFET brand DIODES (Meitai) DMN53D0LDW-13 series DMN53D0LDW
  • PDF DMN53D0LDW-13.pdf
Consultation
DMP10H4D2S-7

DMP10H4D2S-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP10H4D2S-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 270mA Power (Pd) 380mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 4.2 Ω @ 10V, 500mA Package SOT-23 MOSFET Brand DIODES (Meitai) DMP10H4D2S-7 Series DMP10H4D2S
  • PDF DMP10H4D2S-7.pdf
Consultation
DMG4800LSD-13

DMG4800LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG4800LSD-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.6V@250uA Current 7.5A Power (Pd) 1.17W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 16m Ω @ 10V, 9A Package SOP-8 Field Effect Transistor (MOSFET) Brand DIODES DMG4800LSD-13 Series DMG4800LSD
  • PDF DMG4800LSD-13.pdf
Consultation
DMP4047SK3-13

DMP4047SK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP4047SK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 40V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 20A Power (Pd) 1.6W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 45m Ω @ 10V, 4.4A Package TO-252 MOSFET Brand DIODES (American) DMP4047SK3-13 Series DMP4047SK3
  • PDF DMP4047SK3-13.pdf
Consultation
ZVN3310FTA

ZVN3310FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN3310FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2.4V@1mA Current 100mA Power (Pd) 330mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 10V, 500mA Package SOT-23 MOSFET Brand DIODES (USA) ZVN3310FTA Series ZVN3310FTA
  • PDF ZVN3310FTA.pdf
Consultation
DMP6185SE-13

DMP6185SE-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP6185SE-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 3A Power (Pd) 1.2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 150m Ω @ 10V, 2.2A Package SOT-223 MOSFET Brand DIODES DMP6185SE-13 Series DMP6185SE
  • PDF DMP6185SE-13.pdf
Consultation
BS170FTA

BS170FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBS170FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@1mA Current 150uA Power (Pd) 330mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 200mA Package SOT-23 Field Effect Transistor (MOSFET) Brand DIODES (USA) BS170FTA Series BS170FTA
  • PDF BS170FTA.pdf
Consultation
DMN6068LK3-13

DMN6068LK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6068LK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 6A power (Pd) 2.12W channel N conduction resistance (RDS (on) @ Vgs, Id) 68m Ω @ 10V, 12A package TO-252 field-effect transistor (MOSFET) brand DIODES (Meitai) DMN6068LK3-13 series DMN6068LK3
  • PDF DMN6068LK3-13.pdf
Consultation
DMG2302UKQ-7

DMG2302UKQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG2302UKQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 2.8A Power (Pd) 660mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 90m Ω @ 3.6A, 4.5V Package SOT-23 MOSFET Brand DIODES (American) DMG2302UKQ-7 Series DMG2302UKQ
  • PDF DMG2302UKQ-7.pdf
Consultation
ZXMP7A17KTC

ZXMP7A17KTC-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXMP7A17KTC
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 70V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 3.8A Power (Pd) 2.11W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 160m Ω @ 10V, 2.1A Package TO-252 MOSFET Brand DIODES (USA) ZXMP7A17KTC Series ZXMP7A17KTC
  • PDF ZXMP7A17KTC.pdf
Consultation
DMP2035UVT-7

DMP2035UVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2035UVT-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 6A Power (Pd) 1.2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 35m Ω @ 4.5V, 4A Package SOT-23-6 MOSFET Brand DIODES (American) DMP2035UVT-7 Series DMP2035UVT
  • PDF DMP2035UVT-7.pdf
Consultation
DMP610DL-7

DMP610DL-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP610DL-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 180mA Power (Pd) 310mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 5V, 100mA Package SOT-23 MOSFET Brand DIODES DMP610DL-7 Series DMP610DL
  • PDF DMP610DL-7.pdf
Consultation
DMN10H170SK3-13

DMN10H170SK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN10H170SK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 12A Power (Pd) 42W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 140m Ω @ 10V, 5A Package TO-252 MOSFET Brand DIODES DMN10H170SK3-13 Series DMN10H170SK3
  • PDF DMN10H170SK3-13.pdf
Consultation
DMG1029SV-7

DMG1029SV-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG1029SV-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 500mA; 360mA power (Pd) 450mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 1.7 Ω @ 500mA, 10V package SOT-563 field-effect transistor (MOSFET) brand DIODES (American) DMG1029SV-7 series DMG1029SV
  • PDF DMG1029SV-7.pdf
Consultation
DMN63D8LDW-7

DMN63D8LDW-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN63D8LDW-7
  • PackageSOT-363
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 220mA, power (Pd) 300mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 2.8 Ω @ 10V, 250mA packaged SOT-363 field-effect transistor (MOSFET) brand DIODES (Meitai) DMN63D8LDW-7 series DMN63D8LDW
  • PDF DMN63D8LDW-7.pdf
Consultation
ZVN4525GTA

ZVN4525GTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN4525GTA
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 250V threshold voltage (Vgs (th) @ Id) 1.8V@1mA Current 310mA Power (Pd) 2W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 8.5 Ω @ 10V, 500mA Package SOT-223 MOSFET Brand DIODES (Meitai) ZVN4525GTA Series ZVN4525GTA
  • PDF ZVN4525GTA.pdf
Consultation
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