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DIODES(美台)

DIODES(美台)

DMP10H400SE-13

DMP10H400SE-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP10H400SE-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2.3A; 6A power (Pd) 2W; 13.7W channel P conduction resistance (RDS (on) @ Vgs, Id) 250m Ω @ 10V, 5A package SOT-223 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP10H400SE-13 series DMP10H400SE
  • PDF DMP10H400SE-13.pdf
Consultation
BSS8402DW-7-F

BSS8402DW-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS8402DW-7-F
  • PackageSOT-363-6
  • ManufacturerDIODES(美台)
  • DescriptionWithstand voltage of 60V; 50V threshold voltage (Vgs (th) @ Id) 2.5V@250uA ； 2V@1mA Current 115mA; 130mA power (Pd) 200mW channel 1 N; 1 P-conducting resistor (RDS (on) @ Vgs, Id) 3.2 Ω @ 5V, 0.05A; 10 Ω @ 5V, 0.1A package SOT-363-6 MOSFET brand DIODES (Meitai) BSS8402DW-7-F series BSS8402DW
  • PDF BSS8402DW-7-F.pdf
Consultation
DMN30H4D0L-7

DMN30H4D0L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN30H4D0L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 300V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 250mA Power (Pd) 310mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 4 Ω @ 10V, 300mA Package SOT-23 MOSFET Brand DIODES (Meitai) DMN30H4D0L-7 Series DMN30H4D0L
  • PDF DMN30H4D0L-7.pdf
Consultation
DMG3402L-7

DMG3402L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3402L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.4V@250uA Current 4A Power (Pd) 1.4W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 52m Ω @ 10V, 4A Package SOT-23 MOSFET Brand DIODES (American) DMG3402L-7 Series DMG3402L
  • PDF DMG3402L-7.pdf
Consultation
DMN3023L-7

DMN3023L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN3023L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.8V@250uA Current 6.2A Power (Pd) 900mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25m Ω @ 10V, 4A Package SOT-23 MOSFET Brand DIODES (American) DMN3023L-7 Series DMN3023L
  • PDF DMN3023L-7.pdf
Consultation
DMP10H400SK3-13

DMP10H400SK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP10H400SK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 9A Power (Pd) 42W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 240m Ω @ 10V, 5A Package TO-252 MOSFET Brand DIODES DMP10H400SK3-13 Series DMP10H400SK3
  • PDF DMP10H400SK3-13.pdf
Consultation
DMN2056U-7

DMN2056U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN2056U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4A Power (Pd) 940mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 38m Ω @ 4.5V, 3.6A Package SOT-23 MOSFET Brand DIODES (American) DMN2056U-7 Series DMN2056U
  • PDF DMN2056U-7.pdf
Consultation
DMP2305U-7

DMP2305U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2305U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 900mV@250uA Current 4.2A Power (Pd) 1.4W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 60m Ω @ 4.5V, 4.2A Package SOT-23 MOSFET Brand DIODES (American) DMP2305U-7 Series DMP2305U
  • PDF DMP2305U-7.pdf
Consultation
DMN1019USN-7

DMN1019USN-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN1019USN-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 800mV@250uA Current 9.3A Power (Pd) 680mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 10m Ω @ 4V, 9.7A Package SOT-23 MOSFET Brand DIODES DMN1019USN-7 Series DMN1019USN
  • PDF DMN1019USN-7.pdf
Consultation
DMP2120U-7

DMP2120U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2120U-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 3.8A Power (Pd) 800mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 62m Ω @ 4.5V, 4.2A Package SOT-23-3 MOSFET Brand DIODES DMP2120U-7 Series DMP2120U
  • PDF DMP2120U-7.pdf
Consultation
DMG3415UQ-7

DMG3415UQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG3415UQ-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4A Power (Pd) 900mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 39m Ω @ 4.5V, 4A Package SOT-23 MOSFET Brand DIODES (American) DMG3415UQ-7 Series DMG3415UQ
  • PDF DMG3415UQ-7.pdf
Consultation
DMHC3025LSD-13

DMHC3025LSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMHC3025LSD-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 6A; 4.2A power (Pd) 1.5W channel 2 N and 2 P conduction resistors (RDS (on) @ Vgs, Id) 25m Ω @ 5A, 10V package SOP-8 field-effect transistor (MOSFET) brand DIODES (American) DMHC3025LSD-13 series DMHC3025LSD
  • PDF DMHC3025LSD-13.pdf
Consultation
ZVN3320FTA

ZVN3320FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN3320FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 200V threshold voltage (Vgs (th) @ Id) 3V@1mA Current 60mA Power (Pd) 330mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 25 Ω @ 10V, 100mA Package SOT-23 MOSFET Brand DIODES (USA) ZVN3320FTA Series ZVN3320FTA
  • PDF ZVN3320FTA.pdf
Consultation
DMG2302U-7

DMG2302U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG2302U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@50uA Current 4.2A Power (Pd) 800mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 90m Ω @ 4.5V, 3.6A Package SOT-23 MOSFET Brand DIODES (American) DMG2302U-7 Series DMG2302U
  • PDF DMG2302U-7.pdf
Consultation
DMN53D0L-7

DMN53D0L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN53D0L-7
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 500mA Power (Pd) 370mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1.6 Ω @ 500mA, 10V Package SOT-23-3 MOSFET Brand DIODES (Meitai) DMN53D0L-7 Series DMN53D0L
  • PDF DMN53D0L-7.pdf
Consultation
DMN26D0UT-7

DMN26D0UT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN26D0UT-7
  • PackageSOT-523-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 230mA Power (Pd) 300mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3 Ω @ 4.5V, 100mA Package SOT-523-3 MOSFET Brand DIODES DMN26D0UT-7 Series DMN26D0UT
  • PDF DMN26D0UT-7.pdf
Consultation
ZXM61N03FTA

ZXM61N03FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZXM61N03FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 1.4A Power (Pd) 625mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 220m Ω @ 10V, 910mA Package SOT-23 MOSFET Brand DIODES (USA) ZXM61N03FTA Series ZXM61N03FTA
  • PDF ZXM61N03FTA.pdf
Consultation
DMP2045U-7

DMP2045U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2045U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 4.3A Power (Pd) 800mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 45m Ω @ 4.5V, 4A Package SOT-23 MOSFET Brand DIODES DMP2045U-7 Series DMP2045U
  • PDF DMP2045U-7.pdf
Consultation
BSS123W-7-F

BSS123W-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS123W-7-F
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 170mA Power (Pd) 200mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 6 Ω @ 10V, 170mA Package SOT-323 MOSFET Brand DIODES (American) BSS123W-7-F Series BSS123W
  • PDF BSS123W-7-F.pdf
Consultation
DMN24H3D5L-7

DMN24H3D5L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN24H3D5L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 240V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 480mA Power (Pd) 760mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3.5 Ω @ 10V, 300mA Package SOT-23 MOSFET Brand DIODES (Meitai) DMN24H3D5L-7 Series DMN24H3D5L
  • PDF DMN24H3D5L-7.pdf
Consultation
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