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Home > All Products > Triode/MOS transistor/transistor
STP3NK60ZFP

STP3NK60ZFP-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP3NK60ZFP
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP3NK60ZFP封装TO-220F-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)2.4A功率(Pd)20W导通电阻(RDS(on)@Vgs,Id)3.2Ω@10V,1.2A阈值电压(Vgs(th)@Id)3.75V@50uA栅极电荷(Qg@Vgs)11.8nC@0~10V输入电容(Ciss@Vds)311pF@25V…
  • PDF STP3NK60ZFP.pdf
Consultation
STP6NK60Z

STP6NK60Z-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP6NK60Z
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP6NK60Z封装TO-220类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)6A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)1.2Ω@10V,3A阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)46nC@10V输入电容(Ciss@Vds)905pF@25V工作温度-55℃…
  • PDF STP6NK60Z.pdf
Consultation
STP40NF10

STP40NF10-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP40NF10
  • PackageTO-220AB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP40NF10封装TO-220AB-3类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)50A功率(Pd)150W导通电阻(RDS(on)@Vgs,Id)25mΩ@10V,25A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)62nC@10V输入电容(Ciss@Vds)2.18nF@25V反向传输…
  • PDF STP40NF10.pdf
Consultation
STL135N8F7AG

STL135N8F7AG-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTL135N8F7AG
  • PackageVDFN-8-Power
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL135N8F7AG封装VDFN-8-Power类型1个N沟道漏源电压(Vdss)80V连续漏极电流(Id)130A功率(Pd)135W；4.8W导通电阻(RDS(on)@Vgs,Id)3.6mΩ@13A,10V阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)103nC@10V输入电容(Ciss@Vds)6.…
  • PDF STL135N8F7AG.pdf
Consultation
STU7N105K5

STU7N105K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTU7N105K5
  • PackageTO-251(IPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STU7N105K5封装TO-251(IPAK)类型1个N沟道漏源电压(Vdss)1.05kV连续漏极电流(Id)4A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)2Ω@2A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)17nC@10V输入电容(Ciss@Vds)380pF@100V反向传…
  • PDF STU7N105K5.pdf
Consultation
STP16NF06

STP16NF06-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP16NF06
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP16NF06封装TO-220类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)16A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)100mΩ@10V,8A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)13nC@10V输入电容(Ciss@Vds)315pF@25V工作温度-55℃~…
  • PDF STP16NF06.pdf
Consultation
STD13N60DM2

STD13N60DM2-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTD13N60DM2
  • PackageTO-252-2
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD13N60DM2封装TO-252-2FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）600 V25°C 时电流 - 连续漏极 (Id)11A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）365 毫欧 @ 5.5A，…
  • PDF STD13N60DM2.pdf
Consultation
STP2N80K5

STP2N80K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP2N80K5
  • PackageTO-220-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP2N80K5封装TO-220-3FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）800 V25°C 时电流 - 连续漏极 (Id)2A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）4.5 欧姆 @ 1A，10V不…
  • PDF STP2N80K5.pdf
Consultation
STB15N80K5

STB15N80K5-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTB15N80K5
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB15N80K5封装 D2PAK类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)14A功率(Pd)190W导通电阻(RDS(on)@Vgs,Id)300mΩ@10V,7A阈值电压(Vgs(th)@Id)4V@100uA栅极电荷(Qg@Vgs)32nC@10V输入电容(Ciss@Vds)1.1nF@100v反向传输电…
  • PDF STB15N80K5.pdf
Consultation
STP16NF06L

STP16NF06L-ST(意法半导体)

  • TypeTriode/MOS transistor/transistor
  • ModelSTP16NF06L
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP16NF06L封装TO-220类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)16A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)90mΩ@10V,8A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)10nC@5V输入电容(Ciss@Vds)345pF@25V工作温度-55℃…
  • PDF STP16NF06L.pdf
Consultation
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