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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
BSN20-7

BSN20-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSN20-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 500mA Power (Pd) 600mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 1.8 Ω @ 10V, 220mA Package SOT-23 MOSFET Brand DIODES BSN20-7 Series BSN20
  • PDF BSN20-7.pdf
Consultation
DMN6075S-7

DMN6075S-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6075S-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2A Power (Pd) 800mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 85m Ω @ 10V, 3.2A Package SOT-23 MOSFET Brand DIODES DMN6075S-7 Series DMN6075S
  • PDF DMN6075S-7.pdf
Consultation
DMN6040SSD-13

DMN6040SSD-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6040SSD-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 5A Power (Pd) 1.3W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 40m Ω @ 10V, 4.5A Package SOP-8 Field Effect Transistor (MOSFET) Brand DIODES DMN6040SSD-13 Series DMN6040SSD
  • PDF DMN6040SSD-13.pdf
Consultation
DMN6140L-13

DMN6140L-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6140L-13
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 1.6A Power (Pd) 700mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 140m Ω @ 10V, 1.8A Package SOT-23 MOSFET Brand DIODES DMN6140L-13 Series DMN6140L
  • PDF DMN6140L-13.pdf
Consultation
DMP2035U-7

DMP2035U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2035U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 3.6A Power (Pd) 810mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 35m Ω @ 4.5V, 4A Package SOT-23 MOSFET Brand DIODES (American) DMP2035U-7 Series DMP2035U
  • PDF DMP2035U-7.pdf
Consultation
BSS84W-7-F

BSS84W-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS84W-7-F
  • PackageSOT-323
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 130mA Power (Pd) 200mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 5V, 100mA Package SOT-323 MOSFET Brand DIODES BSS84W-7-F Series BSS84W
  • PDF BSS84W-7-F.pdf
Consultation
DMN65D8L-7

DMN65D8L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN65D8L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 310mA Power (Pd) 370mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3 Ω @ 10V, 115mA Package SOT-23 MOSFET Brand DIODES DMN65D8L-7 Series DMN65D8L
  • PDF DMN65D8L-7.pdf
Consultation
DMN10H220L-7

DMN10H220L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN10H220L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 1.4A Power (Pd) 1.3W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 220m Ω @ 10V, 1.6A Package SOT-23 MOSFET Brand DIODES (American) DMN10H220L-7 Series DMN10H220L
  • PDF DMN10H220L-7.pdf
Consultation
DMP10H400SE-13

DMP10H400SE-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP10H400SE-13
  • PackageSOT-223
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 100V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 2.3A; 6A power (Pd) 2W; 13.7W channel P conduction resistance (RDS (on) @ Vgs, Id) 250m Ω @ 10V, 5A package SOT-223 field-effect transistor (MOSFET) brand DIODES (Meitai) DMP10H400SE-13 series DMP10H400SE
  • PDF DMP10H400SE-13.pdf
Consultation
BSS8402DW-7-F

BSS8402DW-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBSS8402DW-7-F
  • PackageSOT-363-6
  • ManufacturerDIODES(美台)
  • DescriptionWithstand voltage of 60V; 50V threshold voltage (Vgs (th) @ Id) 2.5V@250uA ； 2V@1mA Current 115mA; 130mA power (Pd) 200mW channel 1 N; 1 P-conducting resistor (RDS (on) @ Vgs, Id) 3.2 Ω @ 5V, 0.05A; 10 Ω @ 5V, 0.1A package SOT-363-6 MOSFET brand DIODES (Meitai) BSS8402DW-7-F series BSS8402DW
  • PDF BSS8402DW-7-F.pdf
Consultation
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