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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
DMHT6016LFJ-13

DMHT6016LFJ-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMHT6016LFJ-13
  • PackageDFN-12(4.5x5)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 14.8A Power (Pd) 1.16W Channel 4 N Conducting Resistors (RDS (on) @ Vgs, Id) 22m Ω @ 10V, 10A Package DFN-12 (4.5x5) MOSFET Brand DIODES DMHT6016LFJ-13 Series DMHT6016LFJ
  • PDF DMHT6016LFJ-13.pdf
Consultation
DMP510DL-7

DMP510DL-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP510DL-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 50V threshold voltage (Vgs (th) @ Id) 2V@1mA Current 180mA Power (Pd) 310mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 10 Ω @ 5V, 100mA Package SOT-23 MOSFET Brand DIODES DMP510DL-7 Series DMP510DL
  • PDF DMP510DL-7.pdf
Consultation
DMN63D8L-7

DMN63D8L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN63D8L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 350mA Power (Pd) 350mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2.8 Ω @ 10V, 250mA Package SOT-23 MOSFET Brand DIODES DMN63D8L-7 Series DMN63D8L
  • PDF DMN63D8L-7.pdf
Consultation
BS250P

BS250P-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelBS250P
  • PackageTO-92L
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 45V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 230mA Power (Pd) 700mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 14 Ω @ 10V, 200mA Package TO-92L Field Effect Transistor (MOSFET) Brand DIODES (USA) BS250P Series BS250P
  • PDF BS250P.pdf
Consultation
DMN6140L-7

DMN6140L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6140L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 1.6A Power (Pd) 700mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 140m Ω @ 10V, 1.8A Package SOT-23 MOSFET Brand DIODES DMN6140L-7 Series DMN6140L
  • PDF DMN6140L-7.pdf
Consultation
2N7002A-7

2N7002A-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002A-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2V@250uA Current 180mA Power (Pd) 370mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 6 Ω @ 5V, 115mA Package SOT-23 MOSFET Brand DIODES (USA) 2N7002A-7 Series 2N7002A
  • PDF 2N7002A-7.pdf
Consultation
DMN67D8L-7

DMN67D8L-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN67D8L-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 210mA Power (Pd) 340mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 5 Ω @ 10V, 500mA Package SOT-23 MOSFET Brand DIODES DMN67D8L-7 Series DMN67D8L
  • PDF DMN67D8L-7.pdf
Consultation
DMG6602SVT-7

DMG6602SVT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMG6602SVT-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.3V@250uA Current 3.4A; 2.8A power (Pd) 840mW channel 1 N and 1 P conduction resistor (RDS (on) @ Vgs, Id) 60m Ω @ 3.1A, 10V package SOT-23-6 MOSFET brand DIODES (American) DMG6602SVT-7 series DMG6602SVT
  • PDF DMG6602SVT-7.pdf
Consultation
DMT3009LDT-7

DMT3009LDT-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMT3009LDT-7
  • PackageV-DFN3030-8K
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 30A Power (Pd) 1.2W Channel 2 N Conducting Resistors (RDS (on) @ Vgs, Id) 11.1m Ω @ 10V, 14.4A Package V-DFN3030-8K MOSFET Brand DIODES DMT3009LDT-7 Series DMT3009LDT
  • PDF DMT3009LDT-7.pdf
Consultation
ZVP1320FTA

ZVP1320FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVP1320FTA
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 200V threshold voltage (Vgs (th) @ Id) 3.5V@1mA Current 35mA Power (Pd) 350mW Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 80 Ω @ 10V, 50A Package SOT-23 MOSFET Brand DIODES (USA) ZVP1320FTA Series ZVP1320FTA
  • PDF ZVP1320FTA.pdf
Consultation
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