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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
STD36P4LLF6

STD36P4LLF6-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD36P4LLF6
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD36P4LLF6封装TO-252-2(DPAK)类型1个P沟道漏源电压(Vdss)40V连续漏极电流(Id)36A功率(Pd)60W导通电阻(RDS(on)@Vgs,Id)20.5mΩ@10V,18A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)22nC@4.5V输入电容(Ciss@Vds)2.85nF@2…
  • PDF STD36P4LLF6.pdf
Consultation
STD3NM60N

STD3NM60N-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD3NM60N
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD3NM60N封装DPAK类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)3.3A功率(Pd)50W导通电阻(RDS(on)@Vgs,Id)1.6Ω@10V,1.65A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)9.5nC@10V输入电容(Ciss@Vds)188pF@50V反向传输电容…
  • PDF STD3NM60N.pdf
Consultation
STD36P4LLF6

STD36P4LLF6-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD36P4LLF6
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD36P4LLF6封装TO-252-2(DPAK)类型1个P沟道漏源电压(Vdss)40V连续漏极电流(Id)36A功率(Pd)60W导通电阻(RDS(on)@Vgs,Id)20.5mΩ@10V,18A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)22nC@4.5V输入电容(Ciss@Vds)2.85nF@2…
  • PDF STD36P4LLF6.pdf
Consultation
STP11NK40ZFP

STP11NK40ZFP-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP11NK40ZFP
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP11NK40ZFP封装 TO-220F-3类型1个N沟道漏源电压(Vdss)400V连续漏极电流(Id)9A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)550mΩ@10V,4.5A阈值电压(Vgs(th)@Id)4.5V@100uA
  • PDF STP11NK40ZFP.pdf
Consultation
STP8NK100Z

STP8NK100Z-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP8NK100Z
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP8NK100Z封装TO-220类型1个N沟道漏源电压(Vdss)1kV连续漏极电流(Id)6.5A功率(Pd)160W导通电阻(RDS(on)@Vgs,Id)1.85Ω@10V,3.15A阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)102nC@10V输入电容(Ciss@Vds)2.18nF@25V工作…
  • PDF STP8NK100Z.pdf
Consultation
STP24N60M2

STP24N60M2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP24N60M2
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP24N60M2封装TO-220类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)18A功率(Pd)150W导通电阻(RDS(on)@Vgs,Id)190mΩ@10V,9A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)29nC@10V输入电容(Ciss@Vds)1.06nF@100V工作温度-…
  • PDF STP24N60M2.pdf
Consultation
STD12NF06T4

STD12NF06T4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD12NF06T4
  • PackageTO-252-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD12NF06T4封装TO-252-3FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）60 V25°C 时电流 - 连续漏极 (Id)12A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）100 毫欧 @ 6A，10V…
  • PDF STD12NF06T4.pdf
Consultation
STL11N3LLH6

STL11N3LLH6-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTL11N3LLH6
  • PackageVDFN-8-Power
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STL11N3LLH6封装VDFN-8-Power类型1个N沟道漏源电压(Vdss)30V连续漏极电流(Id)11A功率(Pd)2W；50W导通电阻(RDS(on)@Vgs,Id)7.5mΩ@5.5A,10V阈值电压(Vgs(th)@Id)1V@250uA栅极电荷(Qg@Vgs)17nC@4.5V输入电容(Ciss@Vds)1.69nF@2…
  • PDF STL11N3LLH6.pdf
Consultation
STD6NF10T4

STD6NF10T4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD6NF10T4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD6NF10T4封装DPAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)6A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)250mΩ@10V,3A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)14nC@10V输入电容(Ciss@Vds)280pF@25V工作温度-65℃~+…
  • PDF STD6NF10T4.pdf
Consultation
STD5NK50ZT4

STD5NK50ZT4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD5NK50ZT4
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD5NK50ZT4封装TO-252-2(DPAK)类型1个N沟道漏源电压(Vdss)500V连续漏极电流(Id)4.4A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)1.5Ω@10V,2.2A阈值电压(Vgs(th)@Id)4.5V@50uA栅极电荷(Qg@Vgs)28nC@10V输入电容(Ciss@Vds)535pF@25V…
  • PDF STD5NK50ZT4.pdf
Consultation
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