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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
STP11NK40ZFP

STP11NK40ZFP-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP11NK40ZFP
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP11NK40ZFP封装TO-220F-3类型1个N沟道漏源电压(Vdss)400V连续漏极电流(Id)9A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)550mΩ@10V,4.5A阈值电压(Vgs(th)@Id)4.5V@100uA
  • PDF STP11NK40ZFP.pdf
Consultation
STD6NF10T4

STD6NF10T4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD6NF10T4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD6NF10T4封装DPAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)6A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)250mΩ@10V,3A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)14nC@10V输入电容(Ciss@Vds)280pF@25V工作温度-65℃~+…
  • PDF STD6NF10T4.pdf
Consultation
STW12NK90Z

STW12NK90Z-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTW12NK90Z
  • PackageTO-247-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW12NK90Z封装TO-247-3类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)11A功率(Pd)230W导通电阻(RDS(on)@Vgs,Id)880mΩ@10V,5.5A阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)152nC@10V输入电容(Ciss@Vds)3.5nF@25V工作…
  • PDF STW12NK90Z.pdf
Consultation
STW20N95K5

STW20N95K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTW20N95K5
  • PackageTO-247
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW20N95K5封装TO-247类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)17.5A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)330mΩ@9A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)40nC@10V输入电容(Ciss@Vds)1.5nF@100V反向传输…
  • PDF STW20N95K5.pdf
Consultation
STP150N10F7

STP150N10F7-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP150N10F7
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP150N10F7封装TO-220类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)110A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)4.2mΩ@10V,55A阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)117nC@10V输入电容(Ciss@Vds)8.115nF@50V工作…
  • PDF STP150N10F7.pdf
Consultation
STFW3N170

STFW3N170-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTFW3N170
  • PackageTO-3PF-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STFW3N170封装TO-3PF-3类型1个N沟道漏源电压(Vdss)1.7kV连续漏极电流(Id)2.6A功率(Pd)63W导通电阻(RDS(on)@Vgs,Id)13Ω@10V,1.3A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)44nC@10V输入电容(Ciss@Vds)1.1nF@100V工作温度…
  • PDF STFW3N170.pdf
Consultation
STF10N95K5

STF10N95K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTF10N95K5
  • PackageTO-220FP-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF10N95K5封装TO-220FP-3类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)8A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)800mΩ@4A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)22nC@10V输入电容(Ciss@Vds)630pF@100V反向传输…
  • PDF STF10N95K5.pdf
Consultation
STE145N65M5

STE145N65M5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTE145N65M5
  • PackageISOTOP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STE145N65M5封装ISOTOP类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)143A功率(Pd)679W导通电阻(RDS(on)@Vgs,Id)15mΩ@69A,10V阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)414nC@10V输入电容(Ciss@Vds)18.5nF@100V
  • PDF STE145N65M5.pdf
Consultation
STP7NK80ZFP

STP7NK80ZFP-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP7NK80ZFP
  • PackageTO-220FPAB-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP7NK80ZFP封装TO-220FPAB-3类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)5.2A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)1.8Ω@10V,2.6A阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)56nC@10V输入电容(Ciss@Vds)1.138nF@25…
  • PDF STP7NK80ZFP.pdf
Consultation
STP20NM60FP

STP20NM60FP-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP20NM60FP
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP20NM60FP封装TO-220FP类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)20A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)250mΩ@10V,10A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)54nC@10V输入电容(Ciss@Vds)1.5nF@25V反向传输…
  • PDF STP20NM60FP.pdf
Consultation
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