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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
STL130N6F7

STL130N6F7-ST(意法半导体)

Consultation
STL9P3LLH6

STL9P3LLH6-TI(德州仪器)

Consultation
STD25N10F7

STD25N10F7-TI(德州仪器)

Consultation
STF13NM60N

STF13NM60N-TI(德州仪器)

Consultation
STF24N60M2

STF24N60M2-TI(德州仪器)

Consultation
STN2NF10

STN2NF10-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTN2NF10
  • PackageSOT-223-4
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STN2NF10封装SOT-223-4类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)2.4A功率(Pd)3.3W导通电阻(RDS(on)@Vgs,Id)260mΩ@10V,1.2A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)14nC@10V输入电容(Ciss@Vds)280pF@25V工作温度…
  • PDF STN2NF10.pdf
Consultation
STD6N95K5

STD6N95K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD6N95K5
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD6N95K5封装DPAK类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)9A功率(Pd)90W导通电阻(RDS(on)@Vgs,Id)1.25Ω@10V,3A阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)13nC@10V输入电容(Ciss@Vds)450pF@100V工作温度-55℃~+…
  • PDF STD6N95K5.pdf
Consultation
STF14N80K5

STF14N80K5-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTF14N80K5
  • PackageTO-220FP
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF14N80K5封装TO-220FP类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)12A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)445mΩ@6A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)22nC@10V输入电容(Ciss@Vds)620pF@100V工作温度-…
  • PDF STF14N80K5.pdf
Consultation
STD35P6LLF6

STD35P6LLF6-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD35P6LLF6
  • PackageTO-252-2(DPAK)
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD35P6LLF6封装TO-252-2(DPAK)类型1个P沟道漏源电压(Vdss)60V连续漏极电流(Id)35A功率(Pd)70W导通电阻(RDS(on)@Vgs,Id)28mΩ@10V,17.5A阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)30nC@4.5V输入电容(Ciss@Vds)3.78nF@2…
  • PDF STD35P6LLF6.pdf
Consultation
STD17NF03LT4

STD17NF03LT4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD17NF03LT4
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD17NF03LT4封装DPAK类型1个N沟道漏源电压(Vdss)30V连续漏极电流(Id)17A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)50mΩ@10V,8.5A阈值电压(Vgs(th)@Id)2.2V@250uA栅极电荷(Qg@Vgs)6.5nC@5V输入电容(Ciss@Vds)320pF@25V工作温度-5…
  • PDF STD17NF03LT4.pdf
Consultation
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