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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
DMP2035UVTQ-7

DMP2035UVTQ-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP2035UVTQ-7
  • PackageSOT-23-6
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 20V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 7.2A Power (Pd) 2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 35m Ω @ 4A, 4.5V Package SOT-23-6 MOSFET Brand DIODES DMP2035UVTQ-7 Series DMP2035UVTQ
  • PDF DMP2035UVTQ-7.pdf
Consultation
DMN6066SSS-13

DMN6066SSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN6066SSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@250uA Current 3.7A Power (Pd) 1.56W Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 66m Ω @ 4.5A, 10V Package SOP-8 MOSFET Brand DIODES DMN6066SSS-13 Series DMN6066SSS
  • PDF DMN6066SSS-13.pdf
Consultation
ZVN4106FTA

ZVN4106FTA-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelZVN4106FTA
  • PackageSOT-23-3
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 3V@1mA Current 200mA Power (Pd) 350mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2.5 Ω @ 10V, 500mA Package SOT-23-3 MOSFET Brand DIODES (USA) ZVN4106FTA Series ZVN4106FTA
  • PDF ZVN4106FTA.pdf
Consultation
DMN30H4D0LFDE-7

DMN30H4D0LFDE-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN30H4D0LFDE-7
  • PackageDFN-6(2x2)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 300V threshold voltage (Vgs (th) @ Id) 2.8V@250uA Current 550mA Power (Pd) 630mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 4 Ω @ 10V, 300mA Package DFN-6 (2x2) MOSFET Brand DIODES DMN30H4D0LFDE-7 Series DMN30H4D0LFDE
  • PDF DMN30H4D0LFDE-7.pdf
Consultation
DMTH6004SK3-13

DMTH6004SK3-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMTH6004SK3-13
  • PackageTO-252
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 4V@250uA Current 100A, power (Pd) 3.9W; 180W channel N conduction resistance (RDS (on) @ Vgs, Id) 3.8m Ω @ 10V, 90A package TO-252 field-effect transistor (MOSFET) brand DIODES (Meitai) DMTH6004SK3-13 series DMTH6004SK3
  • PDF DMTH6004SK3-13.pdf
Consultation
DMN62D0U-7

DMN62D0U-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN62D0U-7
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 380mA Power (Pd) 380mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 2 Ω @ 4.5V, 100mA Package SOT-23 MOSFET Brand DIODES (American) DMN62D0U-7 Series DMN62D0U
  • PDF DMN62D0U-7.pdf
Consultation
DMP3037LSS-13

DMP3037LSS-13-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMP3037LSS-13
  • PackageSOP-8
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 2.4V@250uA Current 5.8A Power (Pd) 1.2W Channel P Conduction Resistance (RDS (on) @ Vgs, Id) 32m Ω @ 10V, 7A Package SOP-8 MOSFET Brand DIODES (American) DMP3037LSS-13 Series DMP3037LSS
  • PDF DMP3037LSS-13.pdf
Consultation
DMN63D8LV-7

DMN63D8LV-7-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN63D8LV-7
  • PackageSOT-563
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 30V threshold voltage (Vgs (th) @ Id) 1.5V@250uA Current 260mA, power (Pd) 450mW, channel 2 N conduction resistors (RDS (on) @ Vgs, Id) 2.8 Ω @ 10V, 200mA package SOT-563 MOSFET brand DIODES (American) DMN63D8LV-7 series DMN63D8LV
  • PDF DMN63D8LV-7.pdf
Consultation
DMN1260UFA-7B

DMN1260UFA-7B-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • ModelDMN1260UFA-7B
  • PackageDFN-3(0.6x0.8)
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 12V threshold voltage (Vgs (th) @ Id) 1V@250uA Current 500mA Power (Pd) 360mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 366m Ω @ 200mA, 4.5V Package DFN-3 (0.6x0.8) MOSFET Brand DIODES DMN1260UFA-7B Series DMN1260UFA
  • PDF DMN1260UFA-7B.pdf
Consultation
2N7002E-7-F

2N7002E-7-F-DIODES(美台)

  • TypeField effect transistor (MOSFET)
  • Model2N7002E-7-F
  • PackageSOT-23
  • ManufacturerDIODES(美台)
  • DescriptionVoltage withstand 60V threshold voltage (Vgs (th) @ Id) 2.5V@250uA Current 250mA Power (Pd) 370mW Channel N Conduction Resistance (RDS (on) @ Vgs, Id) 3 Ω @ 10V, 250mA Package SOT-23 MOSFET Brand DIODES (USA) 2N7002E-7-F Series 2N7002E
  • PDF 2N7002E-7-F.pdf
Consultation
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