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Home > All Products > Triode/MOS transistor/transistor > Field effect transistor (MOSFET)
STB6NK90ZT4

STB6NK90ZT4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTB6NK90ZT4
  • PackageD2PAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB6NK90ZT4封装D2PAK类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)5.8A功率(Pd)140W导通电阻(RDS(on)@Vgs,Id)2Ω@2.9A,10V阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)60.5nC@10V输入电容(Ciss@Vds)1.35nF@25V反向传…
  • PDF STB6NK90ZT4.pdf
Consultation
STD45P4LLF6AG

STD45P4LLF6AG-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD45P4LLF6AG
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD45P4LLF6AG封装DPAK类型1个P沟道漏源电压(Vdss)40V连续漏极电流(Id)50A功率(Pd)58W导通电阻(RDS(on)@Vgs,Id)15mΩ@25A,10V阈值电压(Vgs(th)@Id)2.5V@250uA栅极电荷(Qg@Vgs)65.5nC@10V输入电容(Ciss@Vds)3.525nF@25V工作温…
  • PDF STD45P4LLF6AG.pdf
Consultation
STD40NF10

STD40NF10-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD40NF10
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD40NF10封装DPAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)50A功率(Pd)125W导通电阻(RDS(on)@Vgs,Id)25mΩ@10V,25A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)62nC@10V输入电容(Ciss@Vds)2.18nF@25V反向传输电容(…
  • PDF STD40NF10.pdf
Consultation
STF33N60M2

STF33N60M2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTF33N60M2
  • PackageTO-220FP-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF33N60M2封装TO-220FP-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)26A功率(Pd)35W导通电阻(RDS(on)@Vgs,Id)125mΩ@13A,10V阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)45.5nC@10V输入电容(Ciss@Vds)1.781nF@100V工…
  • PDF STF33N60M2.pdf
Consultation
STW48N60M2

STW48N60M2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTW48N60M2
  • PackageTO-247AC-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW48N60M2封装TO-247AC-3类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)42A功率(Pd)300W导通电阻(RDS(on)@Vgs,Id)70mΩ@10V,21A阈值电压(Vgs(th)@Id)4V@250uA
  • PDF STW48N60M2.pdf
Consultation
STP43N60DM2

STP43N60DM2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP43N60DM2
  • PackageTO-220
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP43N60DM2封装TO-220类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)34A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)93mΩ@10V,17A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)56nC@10V输入电容(Ciss@Vds)2.5nF@100V工作温度-…
  • PDF STP43N60DM2.pdf
Consultation
STP18N60M2

STP18N60M2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTP18N60M2
  • PackageTO-220-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP18N60M2封装TO-220-3FET 类型N 通道技术MOSFET（金属氧化物）漏源电压（Vdss）600 V25°C 时电流 - 连续漏极 (Id)13A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）280 毫欧 @ 6.5A，1…
  • PDF STP18N60M2.pdf
Consultation
STB60NF06LT4

STB60NF06LT4-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTB60NF06LT4
  • PackageTO-263-2
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB60NF06LT4封装TO-263-2类型1个N沟道漏源电压(Vdss)60V连续漏极电流(Id)60A功率(Pd)110W导通电阻(RDS(on)@Vgs,Id)14mΩ@10V,30A阈值电压(Vgs(th)@Id)1V@250uA栅极电荷(Qg@Vgs)66nC@4.5V输入电容(Ciss@Vds)2nF@25V工作温度-…
  • PDF STB60NF06LT4.pdf
Consultation
STF9NK90Z

STF9NK90Z-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTF9NK90Z
  • PackageTO-220F-3
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF9NK90Z封装TO-220F-3类型1个N沟道漏源电压(Vdss)900V连续漏极电流(Id)8A功率(Pd)40W导通电阻(RDS(on)@Vgs,Id)1.3Ω@10V,3.6A阈值电压(Vgs(th)@Id)4.5V@100uA
  • PDF STF9NK90Z.pdf
Consultation
STD8N60DM2

STD8N60DM2-ST(意法半导体)

  • TypeField effect transistor (MOSFET)
  • ModelSTD8N60DM2
  • PackageDPAK
  • ManufacturerST(意法半导体)
  • Description生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD8N60DM2封装DPAK类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)8A功率(Pd)85W导通电阻(RDS(on)@Vgs,Id)600mΩ@10V,4A阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)13.5nC@10V输入电容(Ciss@Vds)375pF@100V
  • PDF STD8N60DM2.pdf
Consultation
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