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Casa > Todos los productos > Tripolar / mos / Transistor
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MICRONEUTCDIODES华润华晶CHIPLINKNCESTTI
Multi
Paquete：
D2PAKDFN(5x6)DFN-12(4.5x5)DFN-3(0.6x0.8)DFN-3(0.6x1)DFN-3(1.5x2)DFN-6(0.6x0.8)DFN-6(2x2)DFN-6-EP(2x2)DFN-6L(2x2)DFN-8(3.1x3.2)DFN-8(3.3x3.3)DFN-8(3x3)DFN-8(4.9x5.7)DFN-8(4.9x5.8)DFN-8(5.1x6)DFN-8(5.7x5.1)DFN-8(5.8x4.9)DFN-8(5x6)DFN-8L(3.3x3.3)DFN-8L(3x3)DFN-8L(5x6)DFN2020-6DFN2x2-6LDMN3032LFDB-7DPAKESOP-8FDFN-8L(5x6)H2PAK-2ISOTOPPDFN-8(3.1x3.1)PDFN-8(3.1x3.2)PDFN-8(3.3x3.3)PDFN-8(4.9x5.8)PDFN-8(5.1x5.8)PDFN-8(5.2x6.2)PDFN-8(5.8x4.9)PDFN-8(5x5)PDFN-8(5x5.8)PDFN3333-8Power-DI-5060-8PowerDI-3333-8PowerDI-5060-8PowerDI-8(5x6)PowerDI1012-8PowerDI3333-8PowerDI5060-8PowerFLAT(3.3x3.3)PowerFLAT-5x6PowerFLAT-5x6-8PowerFlat-8PowerFLAT-8(3.3x3.3)PowerFLAT-8(5x6)PowerVDFN-8SC-59SC-70-3SMDSO-8SOD-323SOIC-8SOP-8SOP-8-4.0mmSOT-223SOT-223-2SOT-223-3SOT-223-3LSOT-223-4SOT-23SOT-23-3SOT-23-3LSOT-23-6SOT-23-6LSOT-23FSOT-26SOT-323SOT-363SOT-363-6SOT-523SOT-523-3SOT-563SOT-89SOT-89-3SOT-89-3LSOT-963SOT-963-6TDFN-8-PowerTO-126TO-220TO-220-3TO-220-3LTO-220AB-3TO-220FTO-220F-1TO-220F-3TO-220F1TO-220FPTO-220FP-3TO-220FPAB-3TO-247TO-247-3TO-247-3LTO-247AC-3TO-247PTO-251TO-251(IPAK)TO-252TO-252(DPAK)TO-252-2TO-252-2(DPAK)TO-252-2LTO-252-3TO-252-4TO-261-4TO-262-3TO-263TO-263-2TO-263-3TO-263-6TO-263-7LTO-3P-3TO-3PFTO-3PF-3TO-3PNTO-92TO-92-2.5mmTO-92-3TO-92LTO-92L-3TOLLTSOT-26TSSOP-8U-DFN2020-6U-DFN2020-6BU-DFN2020-6DUDFN2020-6-EPV-DFN3030-8KV-DFN3333-8VDFN-8-PowerX1-DFN1006-3X1-DFN1212-3X1-DFN1411-3X2-DFN1006-3X2-DFN1310-6X2-DFN2015-3X2-DSN1006-3XFDFN-3(0.6x0.8)
Más ⤵Multi
STW20N95K5

STW20N95K5-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTW20N95K5
  • PaqueteTO-247
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STW20N95K5封装TO-247类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)17.5A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)330mΩ@9A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)40nC@10V输入电容(Ciss@Vds)1.5nF@100V反向传输…
  • PDF STW20N95K5.pdf
Consulta
STP150N10F7

STP150N10F7-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTP150N10F7
  • PaqueteTO-220
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP150N10F7封装TO-220类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)110A功率(Pd)250W导通电阻(RDS(on)@Vgs,Id)4.2mΩ@10V,55A阈值电压(Vgs(th)@Id)4.5V@250uA栅极电荷(Qg@Vgs)117nC@10V输入电容(Ciss@Vds)8.115nF@50V工作…
  • PDF STP150N10F7.pdf
Consulta
STFW3N170

STFW3N170-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTFW3N170
  • PaqueteTO-3PF-3
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STFW3N170封装TO-3PF-3类型1个N沟道漏源电压(Vdss)1.7kV连续漏极电流(Id)2.6A功率(Pd)63W导通电阻(RDS(on)@Vgs,Id)13Ω@10V,1.3A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)44nC@10V输入电容(Ciss@Vds)1.1nF@100V工作温度…
  • PDF STFW3N170.pdf
Consulta
STF10N95K5

STF10N95K5-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTF10N95K5
  • PaqueteTO-220FP-3
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STF10N95K5封装TO-220FP-3类型1个N沟道漏源电压(Vdss)950V连续漏极电流(Id)8A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)800mΩ@4A,10V阈值电压(Vgs(th)@Id)5V@100uA栅极电荷(Qg@Vgs)22nC@10V输入电容(Ciss@Vds)630pF@100V反向传输…
  • PDF STF10N95K5.pdf
Consulta
STE145N65M5

STE145N65M5-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTE145N65M5
  • PaqueteISOTOP
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STE145N65M5封装ISOTOP类型1个N沟道漏源电压(Vdss)650V连续漏极电流(Id)143A功率(Pd)679W导通电阻(RDS(on)@Vgs,Id)15mΩ@69A,10V阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)414nC@10V输入电容(Ciss@Vds)18.5nF@100V
  • PDF STE145N65M5.pdf
Consulta
STP7NK80ZFP

STP7NK80ZFP-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTP7NK80ZFP
  • PaqueteTO-220FPAB-3
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP7NK80ZFP封装TO-220FPAB-3类型1个N沟道漏源电压(Vdss)800V连续漏极电流(Id)5.2A功率(Pd)30W导通电阻(RDS(on)@Vgs,Id)1.8Ω@10V,2.6A阈值电压(Vgs(th)@Id)4.5V@100uA栅极电荷(Qg@Vgs)56nC@10V输入电容(Ciss@Vds)1.138nF@25…
  • PDF STP7NK80ZFP.pdf
Consulta
STP20NM60FP

STP20NM60FP-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTP20NM60FP
  • PaqueteTO-220FP
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP20NM60FP封装TO-220FP类型1个N沟道漏源电压(Vdss)600V连续漏极电流(Id)20A功率(Pd)45W导通电阻(RDS(on)@Vgs,Id)250mΩ@10V,10A阈值电压(Vgs(th)@Id)5V@250uA栅极电荷(Qg@Vgs)54nC@10V输入电容(Ciss@Vds)1.5nF@25V反向传输…
  • PDF STP20NM60FP.pdf
Consulta
STP80NF10

STP80NF10-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTP80NF10
  • PaqueteTO-220
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STP80NF10封装TO-220类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)80A功率(Pd)300W导通电阻(RDS(on)@Vgs,Id)15mΩ@10V,40A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)182nC@10V输入电容(Ciss@Vds)5.5nF@25V工作温度-55…
  • PDF STP80NF10.pdf
Consulta
STD10P10F6

STD10P10F6-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTD10P10F6
  • PaqueteTO-252-2
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STD10P10F6封装TO-252-2FET 类型P 通道技术MOSFET（金属氧化物）漏源电压（Vdss）100 V25°C 时电流 - 连续漏极 (Id)10A（Tc）驱动电压（最大 Rds On，最小 Rds On）10V不同 Id、Vgs 时导通电阻（最大值）180 毫欧 @ 5A，10V…
  • PDF STD10P10F6.pdf
Consulta
STB120NF10T4

STB120NF10T4-ST(意法半导体)

  • TipoTripolar / mos / Transistor
  • ModeloSTB120NF10T4
  • PaqueteD2PAK
  • FabricanteST(意法半导体)
  • Descripción生产商ST(意法半导体)产品分类场效应管(MOSFET)型号STB120NF10T4封装D2PAK类型1个N沟道漏源电压(Vdss)100V连续漏极电流(Id)110A功率(Pd)312W导通电阻(RDS(on)@Vgs,Id)10.5mΩ@10V,60A阈值电压(Vgs(th)@Id)4V@250uA栅极电荷(Qg@Vgs)233nC@10V输入电容(Ciss@Vds)5.2nF@25V工作温…
  • PDF STB120NF10T4.pdf
Consulta
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